EAGER: Monolithic III-Nitride Nanowire-Based 1.3 Micron Photonic Integrated Circuit on (001) Silicon

EAGER：(001) 硅上基于单片 III 氮化物纳米线的 1.3 微米光子集成电路

• 批准号: 1648870
• 负责人: Pallab Bhattacharya
• 金额: $ 20万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-08-15 至 2018-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1648870&HistoricalAwards=false
• 关键词: EAGER; Monolithic; III; Nitride; Nanowire

Title: SILICON CHIP WITH ONBOARD OPTICAL DEVICES FOR FASTER TRANSMISSION OF INFORMATIONAbstract:Nontechnical Project Description: Microelectronic chips are commonly made of silicon and silicon technology has rapidly progressed over the last several decades primarily to meet the insatiable demand for higher information processing and transmission speeds. The circuits on a silicon chip consist of transistors and passive elements such as resistors, capacitors and inductors, all interconnected with metal-based lines to perform functions such as amplification and switching. The transmission of information has generally been done electronically within the chip, or from chip to chip. It has become evident that carrying information with electrons poses problems of interference, noise and heating due to resistive losses. A more efficient and non-destructive technique to transmit information on a chip or inter-chip is optical communication, where non-interfering photons are the carriers of information and they travel much faster than electrons. The essential elements of such an optical communication system are a monolithic diode laser, waveguides and other passive photonic components, and an optical detector. The stumbling block has been the laser, since silicon does not emit light. External lasers or bonding of diode lasers on the silicon chip are options, but these are not practical technologies. In the proposed project we will epitaxially grow defect-free gallium nitride-based nanowires on silicon and use such nanowire arrays as the active semiconducting medium to realize diode lasers that emit at 1.3ìm to be eye safe. The lasers will be completely monolithic on the silicon chip. In this project, we will investigate the growth, design and characteristics of these novel nanowire lasers. We will also investigate the design and characteristics of a completely monolithic optical communication system on a silicon chip consisting of the nanowire laser, a dielectric waveguide and a detector made with the same nanowire array. The operating characteristics, including the speed of data transmission, will be investigated. The processing and transmission of information are ubiquitous in our daily lives and the expected progress in the proposed project will be extremely relevant to the general public. The subject of the proposal involves physics, chemistry, engineering and mathematics and will therefore be relevant to the education of a broad spectrum of school and college students and underrepresented minorities.Technical Project Description: The goal of this research is to explore the design, fabrication and characteristics of a GaN-based nanowire monolithic photonic integrated circuit on (001) silicon substrate operating at 1.3ìm and suitable for silicon photonics. The nanowires will be grown by molecular beam epitaxy on silicon and the nanowire diode laser will be integrated on-chip with a Si02 waveguide and nanowire detector. The optical communication system will be characterized in detail. The intellectual significance is the conception and realization of III-Nitride nanowire based monolithic edge-emitting 1.3 ìm diode laser and guided wave detector on silicon and their integration with passive waveguides to form a photonic integrated circuit. The proposed research will include extensive growth and characterization of nanowires and theoretical modeling of the nanowire lasers and detectors.A monolithic diode laser, and ultimately a photonic integrated circuit, on a (001) silicon platform and operating at 1.3 ìm is important for silicon photonics and other communications applications, but does not exist at the present time. The broader impacts are the interdisciplinary nature of the research and its undergraduate and underrepresented minorities and K-12 outreach. The principal goal in Education and Human Resource Development (EHRD) is to provide effective programs to educate the students involved in the research and outreach program constituents on the science and technology of photonic materials, regarded as an issue of national importance.

职务名称：硅芯片与板载光学器件更快的传输信息摘要：非技术项目描述：微电子芯片通常由硅和硅技术在过去几十年中迅速发展，主要是为了满足对更高的信息处理和传输速度的贪得无厌的需求。 硅芯片上的电路由晶体管和电阻器、电容器和电感器等无源元件组成，所有这些元件都与金属线互连，以执行放大和开关等功能。信息的传输通常在芯片内或芯片与芯片之间以电子方式完成。 很明显，用电子携带信息会带来干扰、噪声和由于电阻损耗而引起的发热问题。 在芯片上或芯片间传输信息的一种更有效和非破坏性的技术是光通信，其中非干扰光子是信息的载体，并且它们的传播速度比电子快得多。 这种光通信系统的基本元件是单片二极管激光器、波导和其他无源光子元件以及光检测器。 由于硅不发光，激光一直是绊脚石。 外部激光器或二极管激光器在硅芯片上的键合是选择，但这些都不是实用的技术。 在拟议的项目中，我们将在硅上外延生长无缺陷的氮化镓基纳米线，并使用这种纳米线阵列作为有源半导体介质，以实现发射1.3 μ m的二极管激光器，以确保人眼安全。 激光器将完全集成在硅芯片上。在这个项目中，我们将研究这些新型纳米线激光器的生长，设计和特性。我们还将研究在硅芯片上的完全单片光通信系统的设计和特性，该系统由纳米线激光器、介质波导和用相同纳米线阵列制成的检测器组成。 将研究包括数据传输速度在内的操作特性。信息的行程和传递在我们的日常生活中无处不在，拟议项目的预期进展将与公众密切相关。 该提案的主题涉及物理、化学、工程和数学，因此将与广大中小学生和大学生以及代表性不足的少数民族的教育有关。本研究的目的是探索设计，GaN基纳米线单片光子集成电路（001）的制备和特性工作在1.3 μ m的硅衬底，适用于硅光子学。 纳米线将通过分子束外延在硅上生长，并且纳米线二极管激光器将与SiO2波导和纳米线检测器集成在芯片上。 将详细描述光通信系统的特征。其智力意义是基于三族氮化物纳米线的单片边缘发射1.3 μ m硅上半导体激光器和导波检测器的概念和实现，以及它们与无源波导的集成以形成光子集成电路。 这项研究将包括纳米线的广泛生长和表征以及纳米线激光器和探测器的理论建模。在（001）硅平台上工作在1.3 μ m的单片二极管激光器和最终的光子集成电路对于硅光子学和其他通信应用是重要的，但目前还不存在。 更广泛的影响是研究的跨学科性质及其本科生和代表性不足的少数民族和K-12外展。 教育和人力资源开发（EHRD）的主要目标是提供有效的计划，教育参与光子材料科学和技术研究和推广计划的学生，这被视为国家重要问题。

项目成果

$1.3~\mu $ m Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit

$1.3~mu $ m 硅上光学互连：单片 III 族氮化物纳米线光子集成电路

• DOI: 10.1109/jqe.2017.2708526
• 发表时间: 2017
• 期刊: IEEE Journal of Quantum Electronics
• 影响因子: 2.5
• 作者: Hazari, Arnab;Hsiao, Fu Chen;Yan, Lifan;Heo, Junseok;Millunchick, Joanna Mirecki;Dallesasse, John M.;Bhattacharya, Pallab
• 通讯作者: Bhattacharya, Pallab

Constructing interconnects with nitride nanowire arrays

用氮化物纳米线阵列构建互连

• 发表时间: 2018
• 期刊: Compound semiconductor
• 作者: Bhattacharya, Pallab;Hazari, Arnab
• 通讯作者: Hazari, Arnab