Transport Phenomena in the Process of (Ti, Al) N Film Fabrication and Control of the Film Compositions

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TiN, AIN and composite films were deposited by thermal Chemical-Vapour-Deposition under atmospheric pressure, film growth rates and compositions of the composite films were investigated. The microstructures of the as-deposited and post annealed films were observed in concerning of the grain structure, formation of ternary nitrides. Properties of the composite films were investigated.The following results were obtained :1) Growth rate and film compositions of the composite film deposited in the downstream region were expressed by ratio of the single TiN and AlN film growth rates.2) Mass transfer model was proposed for predicting the TiN and AlN film growth rate distributions. The model successfully expressed the growth rate distributions in the reactor along the axial direction for different deposition conditions.3) TiN and AIN grains having several nm to several tens of nm existed neighboring with each other, the configuration of which made the grain growth difficult to occur. Formation of Ti_2AlN was confirmed by annealing the film at 1273K.4) It was observed that oxidation resistance increased by addition of AIN.The composite film had larger hardness than the each films and the post annealed films had the hardness maximum at the composition of Ti/A1-2