Transport Phenomena in the Process of (Ti, Al) N Film Fabrication and Control of the Film Compositions

(Ti,Al)N薄膜制备过程中的输运现象及薄膜成分的控制

• 批准号: 08455343
• 负责人: KIKUCHI Atsushi
• 金额: $ 4.1万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455343/
• 关键词: TiN; AlN; ternary nitrides; chemical vapor deposition; film composition; microstructure; post annealing; 三元系窒化物; 窒化チタン; 窒化アルミニウム; 複合膜; 成膜連度; 化学物相; CVD成膜; (Ti,Al)N膜; TiN膜組織; 圧力・浸量制御; デジタルレコーディング; 熱力学データベース; 反応速度定数; 結晶配向

TiN, AIN and composite films were deposited by thermal Chemical-Vapour-Deposition under atmospheric pressure, film growth rates and compositions of the composite films were investigated. The microstructures of the as-deposited and post annealed films were observed in concerning of the grain structure, formation of ternary nitrides. Properties of the composite films were investigated.The following results were obtained :1) Growth rate and film compositions of the composite film deposited in the downstream region were expressed by ratio of the single TiN and AlN film growth rates.2) Mass transfer model was proposed for predicting the TiN and AlN film growth rate distributions. The model successfully expressed the growth rate distributions in the reactor along the axial direction for different deposition conditions.3) TiN and AIN grains having several nm to several tens of nm existed neighboring with each other, the configuration of which made the grain growth difficult to occur. Formation of Ti_2AlN was confirmed by annealing the film at 1273K.4) It was observed that oxidation resistance increased by addition of AIN.The composite film had larger hardness than the each films and the post annealed films had the hardness maximum at the composition of Ti/A1-2

在常压下用热化学气相沉积法制备了TiN、AlN及复合薄膜，研究了薄膜的生长速率和复合薄膜的成分。观察了沉积态和退火后薄膜的微观结构，包括晶粒结构、三元氮化物的形成。结果表明：（1）下游沉积的复合膜的生长速率和膜组成可用单个TiN和AlN膜生长速率的比值表示;（2）提出了预测TiN和AlN膜生长速率分布的传质模型。该模型成功地表达了不同沉积条件下反应器内沿着轴向的生长速率分布。3）TiN和AlN晶粒尺寸在几nm到几十nm之间，相互相邻，这种结构使得晶粒生长难以发生。在1273 K下退火，薄膜中形成了Ti_2AlN; 4）AlN的加入提高了薄膜的抗氧化性能，复合薄膜的硬度比单一薄膜的硬度大，退火后薄膜的硬度在Ti/A1-2组分处达到最大值

项目成果

Noboru Yoshikawa: "Morpbology and TexTure of Chemical-Vapour-Deposited TiN Films" Proceedings of Materials Research Society.Spring MeeTing 1997. (印刷中). (1997)

Noboru Yoshikawa：“化学气相沉积 TiN 薄膜的形态学和纹理”材料研究学会论文集。1997 年春季会议。（出版中）。

Noboru Yoshikawa: "Morphology and Texture of Chemical- Vapour-Deposited TiN Films" Proceedings of Materials Research Society (MRS). vol.472. 221.MRS (1997)

Noboru Yoshikawa：“化学气相沉积 TiN 薄膜的形态和织构”材料研究学会 (MRS) 论文集。

Noboru Yoshikawa: "Morphology and Texture of Chemical-Vapour-Deposited TiN Films" Proceedings of Materials Research Society(MRS). 472. 221-226 (1997)

Noboru Yoshikawa：“化学气相沉积 TiN 薄膜的形态和织构”材料研究学会 (MRS) 论文集。