Transport Phenomena in the Process of (Ti, Al) N Film Fabrication and Control of the Film Compositions

(Ti,Al)N薄膜制备过程中的输运现象及薄膜成分的控制

• 批准号: 08455343
• 负责人: KIKUCHI Atsushi
• 金额: $ 4.1万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455343/
• 关键词: TiN; AlN; ternary nitrides; chemical vapor deposition; film composition; microstructure; post annealing; 三元系窒化物; 窒化チタン; 窒化アルミニウム; 複合膜; 成膜連度; 化学物相; CVD成膜; (Ti,Al)N膜; TiN膜組織; 圧力・浸量制御; デジタルレコーディング; 熱力学データベース; 反応速度定数; 結晶配向

TiN, AIN and composite films were deposited by thermal Chemical-Vapour-Deposition under atmospheric pressure, film growth rates and compositions of the composite films were investigated. The microstructures of the as-deposited and post annealed films were observed in concerning of the grain structure, formation of ternary nitrides. Properties of the composite films were investigated.The following results were obtained :1) Growth rate and film compositions of the composite film deposited in the downstream region were expressed by ratio of the single TiN and AlN film growth rates.2) Mass transfer model was proposed for predicting the TiN and AlN film growth rate distributions. The model successfully expressed the growth rate distributions in the reactor along the axial direction for different deposition conditions.3) TiN and AIN grains having several nm to several tens of nm existed neighboring with each other, the configuration of which made the grain growth difficult to occur. Formation of Ti_2AlN was confirmed by annealing the film at 1273K.4) It was observed that oxidation resistance increased by addition of AIN.The composite film had larger hardness than the each films and the post annealed films had the hardness maximum at the composition of Ti/A1-2

采用热化学气相沉积法在大气压下沉积TiN、AlN和复合薄膜，研究了薄膜的生长速率和复合薄膜的成分。观察沉积态和退火后薄膜的微观结构，包括晶粒结构、三元氮化物的形成。研究了复合薄膜的性能。得到以下结果：1）下游区域沉积的复合薄膜的生长速率和薄膜成分用单个TiN和AlN薄膜生长速率的比值表示。2）提出了传质模型来预测TiN和AlN薄膜的生长速率分布。该模型成功地表达了不同沉积条件下反应器内沿轴向的生长速率分布。3)几纳米到几十纳米的TiN和AlN晶粒彼此相邻存在,其结构使得晶粒难以生长。通过在 1273K 下对薄膜进行退火，确认了 Ti_2AlN 的形成。4) 观察到添加 AIN 后抗氧化性增加。复合薄膜的硬度比各薄膜大，并且后退火薄膜在 Ti/Al-2 成分下硬度最大。

项目成果

Noboru Yoshikawa: "Morpbology and TexTure of Chemical-Vapour-Deposited TiN Films" Proceedings of Materials Research Society.Spring MeeTing 1997. (印刷中). (1997)

Noboru Yoshikawa：“化学气相沉积 TiN 薄膜的形态学和纹理”材料研究学会论文集。1997 年春季会议。（出版中）。

Noboru Yoshikawa: "Morphology and Texture of Chemical- Vapour-Deposited TiN Films" Proceedings of Materials Research Society (MRS). vol.472. 221.MRS (1997)

Noboru Yoshikawa：“化学气相沉积 TiN 薄膜的形态和织构”材料研究学会 (MRS) 论文集。

Noboru Yoshikawa: "Morphology and Texture of Chemical-Vapour-Deposited TiN Films" Proceedings of Materials Research Society(MRS). 472. 221-226 (1997)

Noboru Yoshikawa：“化学气相沉积 TiN 薄膜的形态和织构”材料研究学会 (MRS) 论文集。