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Growth of Large Rutile Single Crystal by Heater-Inserted Floating Zone Method

Growth of Large Rutile Single Crystal by Heater-Inserted Floating Zone Method
插入加热器浮区法生长大金红石单晶
批准号:
08455401
负责人:
KODAIRA Kohei
金额:
$4.93万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997

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KODAIRA Kohei的其他基金

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中文摘要
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英文摘要
Rutile single crystals have attracted much attention for their applications as polarizar. The single crystal have success fully grown by the floating zone (FZ) method, which is difficult to grow large size crystals because the molten zone is kept only by surface tension of the melt. In this study, we have grown large rutile single crystals by the heater-inserted floating zone (heater-inserted FZ) method, in which the melts were supported at the bottom of the iridium crucible and growing crystals The size of a hole at the crucible center should be 2mm in diameter to keep continuous feeding of the melt to the growth region. The use of heat insulating materials made of porous zirconia was effective to melt the rutile. A heat-shielding plate below the crucible was also effective to shallow temperature gradient.Continuous feeding of raw materials were possible to grow for long time by using granular TiO_n. Rutile single crystals with about 25mm in diameter were successfully grown by the heater-inserted FZ method. It will be possible to grow rutile single crystals having larger diameters by a larger crucible.
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Growth of Apatite-Type Lanthanide Silicates Single Crystals by the Floating Zone Method and Mechanism of Their Oxide Ionic Conduction
  • 批准号:
    10450327
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 资助金额:
    $7.74万
  • 财政年份:
    1998
  • 负责人:
    KODAIRA Kohei
  • 依托单位:
Studies on Growth and Characterization of High Quality Metal Oxide Single Crystals
  • 批准号:
    05403023
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)
  • 资助金额:
    $18.5万
  • 财政年份:
    1993
  • 负责人:
    KODAIRA Kohei
  • 依托单位:
Studies on preparation of transparent conductive oxide thin films by sol-gel method
  • 批准号:
    02555158
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
  • 资助金额:
    $5.18万
  • 财政年份:
    1990
  • 负责人:
    KODAIRA Kohei
  • 依托单位:
Preparation of High Purity Nitrides
  • 批准号:
    01470066
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
  • 资助金额:
    $3.78万
  • 财政年份:
    1989
  • 负责人:
    KODAIRA Kohei
  • 依托单位: