Studies on preparation of transparent conductive oxide thin films by sol-gel method

采用溶胶凝胶法在熔融二氧化硅衬底上制备了厚度为140 nm的掺锡In2O3SnO2和掺Sb SnO2薄膜。这些薄膜在可见光范围内的透过率为90%。在55ﾟC以上焙烧30min，薄膜与熔融二氧化硅基片之间的相互作用不明显；在350ﾟC以上焙烧时，OH基团脱水后，In_2O_3薄膜晶化。薄膜的最小电阻率为3x10~(-3)~(-3)，在850ﾟ℃下反应30min，锡的摩尔分数为7mol%。薄膜在300ﾟC下真空退火30分钟后，薄膜的电阻率降至7×10~(-4)；OMEGAcm.SnO_2薄膜在550ﾟC以上逐渐晶化，烧成过程中OH基团脱水。随着烧成温度的升高，薄膜中一次粒子的颗粒继续长大，气孔率没有明显变化。当Sb的摩尔分数为7.5mol%，在800ﾟC保温30min时，薄膜的电阻率达到最小值(3×10~(-1)；~3~gT；OMEGAcm)。

Sn-doped In_2O_3 and Sb-doped SnO_2 thin films with 140 nm in thickness prepared on fused silica substrates by a sol-gel method. The transmittance of these films was 90% in the visible region. The interaction between the film and a fused silica substrate was not recognized by firing above 55ﾟC for 30minutes.In_2O_3 thin films crystallized above 350ﾟC, after OH groups were dehydrated during the firing. The minimum resistivity (3X10^<-3>OMEGAcm) was attained for the film with 7mol%Sn prepared at 850ﾟC for 30 minutes. After the film was annealed at 300ﾟC for 30 minutes in vacuum, the resistivity of the film decreased to 7X10^<-4>OMEGAcm.SnO_2 thin films progressively crystallized above 550ﾟC, after OH groups were dehydrated during the firing. Grain growth of primary particles in the films proceeded with raising up firing temprature and also without any substantial change in the porosity. The minimum resistivity (3X10^<-3>OMEGAcm) was attained for the film with 7.5mol%Sb prepared at 800ﾟC for 30 minutes.