Studies on preparation of transparent conductive oxide thin films by sol-gel method

溶胶-凝胶法制备透明导电氧化物薄膜的研究

• 批准号: 02555158
• 负责人: KODAIRA Kohei
• 金额: $ 5.18万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02555158/
• 关键词: Transparent conductive; Tin oxide; Sol-gel method; Indium oxide; ITO thin film; oxide thin film; ガスセンサ-

Sn-doped In_2O_3 and Sb-doped SnO_2 thin films with 140 nm in thickness prepared on fused silica substrates by a sol-gel method. The transmittance of these films was 90% in the visible region. The interaction between the film and a fused silica substrate was not recognized by firing above 55ﾟC for 30minutes.In_2O_3 thin films crystallized above 350ﾟC, after OH groups were dehydrated during the firing. The minimum resistivity (3X10^<-3>OMEGAcm) was attained for the film with 7mol%Sn prepared at 850ﾟC for 30 minutes. After the film was annealed at 300ﾟC for 30 minutes in vacuum, the resistivity of the film decreased to 7X10^<-4>OMEGAcm.SnO_2 thin films progressively crystallized above 550ﾟC, after OH groups were dehydrated during the firing. Grain growth of primary particles in the films proceeded with raising up firing temprature and also without any substantial change in the porosity. The minimum resistivity (3X10^<-3>OMEGAcm) was attained for the film with 7.5mol%Sb prepared at 800ﾟC for 30 minutes.

采用溶胶-凝胶法制备了厚度为140 nm的锡掺杂In_2O_3和锑掺杂SnO_2薄膜。这些薄膜在可见光区的透过率为90%。在55℃以上加热30分钟后，薄膜和熔融二氧化硅衬底之间的相互作用没有被识别出来。在焙烧过程中，OH基脱水，在350℃以上得到结晶In_2O_3薄膜。以7mol%Sn为原料，在850℃的温度下制备30分钟后，薄膜的电阻率达到了最小值（3X10^<-3>OMEGAcm）。在300°C真空退火30分钟后，薄膜的电阻率降至7X10^<-4>OMEGAcm。在烧制过程中，OH基脱水后，SnO_2薄膜在550℃以上逐渐结晶。随着烧成温度的升高，薄膜中初生颗粒的晶粒继续长大，孔隙率也没有发生实质性的变化。以7.5mol%Sb为原料，在800℃温度下制备30 min，薄膜的电阻率最小（3 × 10^<-3>OMEGAcm）。

项目成果

K.Kodaira,M.Sohma and T.Furusaki: "Preparation and Properties of SnO_2 Thin Films by Dipーcoating Method" Ceramic Thin and Tick Films. 11. 301-306 (1990)

K.Kodaira、M.Sohma 和 T.Furusaki：“浸涂法制备 SnO_2 薄膜及其性能”陶瓷薄膜和 Tick 薄膜。 11. 301-306 (1990)