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Growth of Apatite-Type Lanthanide Silicates Single Crystals by the Floating Zone Method and Mechanism of Their Oxide Ionic Conduction

Growth of Apatite-Type Lanthanide Silicates Single Crystals by the Floating Zone Method and Mechanism of Their Oxide Ionic Conduction
浮区法生长磷灰石型镧系硅酸盐单晶及其氧化物离子传导机理
批准号:
10450327
负责人:
KODAIRA Kohei
金额:
$7.74万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999

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中文摘要
翻译
具有磷灰石结构的稀土硅酸盐是一种新型的氧化物离子导体,在600℃的低温下,其电导率优于稳定化的氧化锆。然而,到目前为止,这些材料还没有生长出大尺寸的单晶,因此它们的基本性质还没有弄清楚。本研究采用浮区法生长了磷灰石型稀土硅酸盐单晶,并对其电学性能进行了测试,从光吸收的角度,生长了Pr、Nd、Sm硅酸盐晶体。所有的晶体都很容易用浮区法生长,因为它们是一致熔化的。对于ND系统,偶尔会含有气泡包裹体,但使用贫钕的送料棒能够生长出无包裹体的晶体。同分组成可能与化学计量组成不同,并位于贫钕一侧。对于Sm-系统,由于微裂纹的形成,还没有得到宏观上无缺陷的晶体。然而,由于裂纹是平行于c平面形成的,因此它们不会显著阻碍电导率的测量。对于所有类型的晶体,平行于c轴的电导率比垂直于c轴的电导率大约一个数量级。这些结果证明,2a位的氧离子优先通过平行于磷灰石结构c轴的通道迁移。单晶的电导率与稀土离子的种类无关,但烧结体的电导率明显降低。这是因为2a位的氧离子与6h位的3个稀土离子在同一平面水平上配位。
英文摘要
Lanthanide silicates with an apatite structure are a new type of oxide ionic conductors; at low temperatures blow 600 ℃ the conductivities of these materials are superior to that of stabilized zirconia. However, no large-size single crystals of these materials have so far been grown, and accordingly their essential properties have not yet clarified. In this study, single crystals of apatite-type lanthanide silicates were grown by the floating zone method and their electrical properties were evaluated.From the viewpoint of light-absorption, praseodymium, neodymium and samarium silicates crystals were grown. All the crystals were easily grown by the floating zone method since they melt congruently. For the Nd-system, bubble inclusions were occasionally contained but the use of a Nd-poor feed rod enabled to grow an inclusion-free crystal. The congruent composition may be different form the stoichiometric one and is located at Nd-poor side. For the Sm-system, macroscopic defect-free crystals have not yet been obtained due to the formation of microcracks. Since the cracks were formed parallel to the c-plane, however, they do not hinder significantly the measurements of conductivities. For all the kinds of crystals, the conductivities parallel to the c-axis were larger by about one order of magnitude than those perpendicular to the c-axis. These results proved that the oxide ions at 2a site migrate preferentially through the channel parallel to the c-axis of the apatite structure. The conductivities of the single crystals were independent on the kinds of rare-earth ions although remarkable decrease in the conductivities were observed for the sintered compacts. This is because the oxide ions at 2a site is coordinated by three rare-earth ions at 6h site on the same plane level.
期刊论文(10)
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会议论文
S. Nakayama, M. Sakamoto, M. Higuchi, K. Kodaira, M. Sato, S. Kakita, T. Suzuki, K. Itoh: "Oxide lonic Conductivity of Apatite Type NdィイD29.33ィエD2(SiOィイD24ィエD2)ィイD26ィエD2OィイD22ィエD2 Single Crystal"J. Eur. Ceram. Soc.. 19. 507-510 (1999)
S. Nakayama、M. Sakamoto、M. Higuchi、K. Kodaira、M. Sato、S. Kakita、T. Suzuki、K. Itoh:“磷灰石型 Nd29.33D2(SiO D24 D2) D26 D2O D22 的氧化物离子电导率D2 单晶”J. Eur. Ceram. Soc.. 19. 507-510 (1999)
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S.Nakayama: "Ionic Conductivity of Aptite-Type Ndx(SiO_4)_6O_<1.5X-12>(X=9.20 and 9.33)"J.Mater.Sci.Let.. (in press).
S.Nakayama:“Aptite 型 Ndx(SiO_4)_6O_<1.5X-12>(X=9.20 和 9.33) 的离子电导率”J.Mater.Sci.Let..(出版中)。
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10
    Growth of Large Rutile Single Crystal by Heater-Inserted Floating Zone Method
    • 批准号:
      08455401
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $4.93万
    • 财政年份:
      1996
    • 负责人:
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    • 依托单位:
    Studies on Growth and Characterization of High Quality Metal Oxide Single Crystals
    • 批准号:
      05403023
    • 项目类别:
      Grant-in-Aid for General Scientific Research (A)
    • 资助金额:
      $18.5万
    • 财政年份:
      1993
    • 负责人:
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    • 依托单位:
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    • 批准号:
      02555158
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $5.18万
    • 财政年份:
      1990
    • 负责人:
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    • 依托单位:
    Preparation of High Purity Nitrides
    • 批准号:
      01470066
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $3.78万
    • 财政年份:
      1989
    • 负责人:
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    • 依托单位:
    海外基金