Studies on Growth and Characterization of High Quality Metal Oxide Single Crystals

高品质金属氧化物单晶的生长及表征研究

基本信息

  • 批准号:
    05403023
  • 负责人:
  • 金额:
    $ 18.5万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)
  • 财政年份:
    1993
  • 资助国家:
    日本
  • 起止时间:
    1993 至 1995
  • 项目状态:
    已结题

项目摘要

High quality metal oxide single crystals have been applied to many electronic devices. This study is to clarify the growth and characterization of rutile and trirutile single crystals by floating zone method, and also quartz single crystals by hydrothermal method. Following results were obtained through this investigation.(1) Rutile single crystals free from low-angle grain boundaries were grown with the addition of Al, Zr and Sc. Optical quality of the crystals was superior to that of commercially available crystals grown by the Verneuil method.(2) MgTa_2O_6 single crystals which has trirutile structure were successfully grown by FZ method. The refractive indices for ordinary and extraordinary rays were 2.07 and 2.18 under white light, respectively, and birefringence was 0.11. Pale green NiTa_2O_6 single crystals were also grown by the same method. The crystals had strong absorption spectra in the wave length ranges of 300-500,650-900 and 1100-1600 nm.(3) Quartz single crystals were grown from ammonium fluoride solutions at 230-280 ゚C and 4-100 MPa under hydrothermal condition. The maximum growth rate of the Z face attained 0.88 mm/day which was comparable to that in alkaline solutions. The linear defect density in Z growth zone was about 10^3-10^5 pcs/cm^2, higher than that alkaline solutions. Strong absorption at about 3500cm^<-1> by -OH streching vibration was observed in FTIR spectra.
高质量的金属氧化物单晶已经应用于许多电子器件。本研究旨在阐明漂浮区法生长金红石和三金红石单晶以及水热法生长石英单晶的方法和表征。研究结果表明:(1)添加Al、Zr、Sc后,金红石型单晶生长无小角度晶界。晶体的光学质量优于用Verneuil法生长的商用晶体。(2)成功地用FZ法生长了具有三金红石型结构的MgTA_2O_6单晶。在白光下,普通光线和非常光线的折射率分别为2.07和2.18,双折射为0.11。用同样的方法生长了淡绿色的NiTa_2O_6单晶。晶体在300-500,650-900和1100-1600 nm范围内有较强的吸收光谱。(3)在水热条件下,在230-280゚C和4-100 Mpa的条件下,从氟化铵溶液中生长出石英单晶。Z面的最大生长速率达到0.88 mm/d,与碱性溶液中的生长速率相当。Z生长区的线缺陷密度约为10^3~10^5个/cm~2,高于碱性溶液。FTIR光谱在3500 cm~(-1)&gt;by-OH伸缩振动处有很强的吸收。

项目成果

期刊论文数量(4)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Kazuto, HATTA: "Floating Zone Growth and Characterization of Alumimium-doped Rutile Single Crystals" J.Crystal Growth. (in press).
Kazuto,HATTA:“掺铝金红石单晶的浮区生长和表征”J.Crystal Growth。
  • DOI:
  • 发表时间:
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    0
  • 作者:
  • 通讯作者:
Kazuo ANDO: "FIoating Zone Growth and Optical Properties of Nickel Tantalum Oxide Single Crystals" Materials Research Bulletin. 29. 385-391 (1994)
安藤一雄:“镍钽氧化物单晶的浮区生长和光学性质”材料研究简报。
  • DOI:
  • 发表时间:
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  • 影响因子:
    0
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  • 通讯作者:
Mikio HIGUCHI: "Solid-liquid Interface Shapes in the Floating Zone Growth of Rutile Single Crystals" Materials Research Bulletin. 29. 545-550 (1994)
Mikio HIGUCHI:“金红石单晶浮区生长中的固液界面形状”材料研究通报。
  • DOI:
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  • 影响因子:
    0
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  • 通讯作者:
Junichi, TAKAHASHI: "Preparation of Titania Colloids by Thermal Hydrolysis of Urea and Densification Behavior of the Colloid-derived monolithic Titania Gels" J.Sol-Gel Sci. Tech.4. 15-21 (1995)
Junichi,TAKAHASHI:“通过尿素热水解制备二氧化钛胶体以及胶体衍生整体二氧化钛凝胶的致密化行为”J.Sol-Gel Sci。
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    0
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KODAIRA Kohei其他文献

KODAIRA Kohei的其他文献

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{{ truncateString('KODAIRA Kohei', 18)}}的其他基金

Growth of Apatite-Type Lanthanide Silicates Single Crystals by the Floating Zone Method and Mechanism of Their Oxide Ionic Conduction
浮区法生长磷灰石型镧系硅酸盐单晶及其氧化物离子传导机理
  • 批准号:
    10450327
  • 财政年份:
    1998
  • 资助金额:
    $ 18.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Growth of Large Rutile Single Crystal by Heater-Inserted Floating Zone Method
插入加热器浮区法生长大金红石单晶
  • 批准号:
    08455401
  • 财政年份:
    1996
  • 资助金额:
    $ 18.5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Studies on preparation of transparent conductive oxide thin films by sol-gel method
溶胶-凝胶法制备透明导电氧化物薄膜的研究
  • 批准号:
    02555158
  • 财政年份:
    1990
  • 资助金额:
    $ 18.5万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Preparation of High Purity Nitrides
高纯氮化物的制备
  • 批准号:
    01470066
  • 财政年份:
    1989
  • 资助金额:
    $ 18.5万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
High Pressure Hydroghermal Growth of Beryl Single Crystals
绿柱石单晶的高压水热生长
  • 批准号:
    61470066
  • 财政年份:
    1986
  • 资助金额:
    $ 18.5万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

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