Preparation of High Purity Nitrides
Preparation of High Purity Nitrides
批准号:
01470066
负责人:
KODAIRA Kohei
金额:
$3.78万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1989
资助国家:
日本
项目状态:
已结题
起止时间:
1989 至 1990
中文摘要
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英文摘要
AlN ceramics have a high thermal conductivity and low thermal expansion. There are so many applications to structural materials as LSI substrates. The purpose of this work is to establish preparation procedures of AlN fine powder with high purity by direct nitridation of aluminum metal. The nitridation of Al-powder was conducted under a stream of nitrogen. Relatively rapid nitridation reaction began at temperature range of 850^゚C to 1200^゚C. The powders prepared at 900^゚C for 2 hours were identified as AlN with a small amounts of residual metallic Al by powder X-ray analysis. Nitridation of aluminum by an addition of 30wt% AlN powder was very useful for the production of well dispersed powders without aggregation. AlN fine powders showing with color were obtained by re-nitridation at 1600 ^゚C of the powder prepared at 900 ^゚C for 2 hours. Two stage niidation of aluminum with AlN powders is very advantageous method for the preparation of fine powder with high sintering properties.
期刊论文(6)
专著(0)
科研奖励(0)
会议论文
小平 紘平・樋口 幹雄: "直接窒化による窒化アルミニウム粉末の合成" 日本セラミックス協会学術論文誌.
Kohei Kodaira 和 Mikio Higuchi:“通过直接氮化合成氮化铝粉末”,日本陶瓷学会杂志。
DOI:
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影响因子:
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作者:
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通讯作者:
K. Kodaira and M. Higuchi: "Preparation of High Purity Rluminum Nitride by direct Nitridation" J. Ceram Soc. JaP.
K. Kodaira 和 M. Higuchi:“通过直接氮化制备高纯度氮化铝”J. Ceram Soc。
DOI:
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
Growth of Apatite-Type Lanthanide Silicates Single Crystals by the Floating Zone Method and Mechanism of Their Oxide Ionic Conduction
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批准号:10450327
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.74万
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财政年份:1998
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负责人:KODAIRA Kohei
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依托单位:
Growth of Large Rutile Single Crystal by Heater-Inserted Floating Zone Method
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批准号:08455401
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.93万
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财政年份:1996
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负责人:KODAIRA Kohei
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依托单位:
Studies on Growth and Characterization of High Quality Metal Oxide Single Crystals
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批准号:05403023
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$18.5万
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财政年份:1993
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负责人:KODAIRA Kohei
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依托单位:
Studies on preparation of transparent conductive oxide thin films by sol-gel method
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批准号:02555158
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$5.18万
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财政年份:1990
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负责人:KODAIRA Kohei
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依托单位:
High Pressure Hydroghermal Growth of Beryl Single Crystals
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批准号:61470066
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.29万
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财政年份:1986
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负责人:KODAIRA Kohei
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依托单位:
海外基金