Preparation of High Purity Nitrides

高纯氮化物的制备

• 批准号: 01470066
• 负责人: KODAIRA Kohei
• 金额: $ 3.78万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01470066/
• 关键词: Nitride; Aluminum nitride; Thermal conductivity; Substrate materials; 高熱伝導体; 放熱基板

AlN ceramics have a high thermal conductivity and low thermal expansion. There are so many applications to structural materials as LSI substrates. The purpose of this work is to establish preparation procedures of AlN fine powder with high purity by direct nitridation of aluminum metal. The nitridation of Al-powder was conducted under a stream of nitrogen. Relatively rapid nitridation reaction began at temperature range of 850^ﾟC to 1200^ﾟC. The powders prepared at 900^ﾟC for 2 hours were identified as AlN with a small amounts of residual metallic Al by powder X-ray analysis. Nitridation of aluminum by an addition of 30wt% AlN powder was very useful for the production of well dispersed powders without aggregation. AlN fine powders showing with color were obtained by re-nitridation at 1600 ^ﾟC of the powder prepared at 900 ^ﾟC for 2 hours. Two stage niidation of aluminum with AlN powders is very advantageous method for the preparation of fine powder with high sintering properties.

AlN陶瓷具有较高的导热系数和较低的热膨胀。大规模集成电路衬底等结构材料的应用非常广泛。建立了金属铝直接氮化法制备高纯氮化铝微粉的工艺。铝粉的氮化是在氮气的作用下进行的。在85 0ﾟC~12 0 0ﾟC温度范围内，氮化反应开始较快。粉末X射线分析表明，在90 0ﾟC下反应2 h制得的粉末为氮化铝和少量残留的金属铝。添加30wt%的AlN粉末对铝进行氮化处理，有利于制备分散均匀、无团聚的粉末。在160 0ﾟC下二次氮化，在90 0ﾟC下氮化2 h，可得到具有颜色的氮化铝微粉。用AlN粉末对铝进行两段氧化是制备高烧结性能细粉的一种非常有利的方法。

项目成果

小平 紘平・樋口 幹雄: "直接窒化による窒化アルミニウム粉末の合成" 日本セラミックス協会学術論文誌.

Kohei Kodaira 和 Mikio Higuchi：“通过直接氮化合成氮化铝粉末”，日本陶瓷学会杂志。

K. Kodaira and M. Higuchi: "Preparation of High Purity Rluminum Nitride by direct Nitridation" J. Ceram Soc. JaP.

K. Kodaira 和 M. Higuchi：“通过直接氮化制备高纯度氮化铝”J. Ceram Soc。