DEVELOPMENT OF SOLID STATE IMAGING DETECTOR FOR HIGH ENERGY FLUX

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ZnSe, ZnTe, CdSeE and CdTe thin films have deen epitaxially qrowm on gallium arsenide GaAs (100) substrates by the remote polasma enhanced chemical vapor deposition (RPE-CVD). Diethyl zinc, dimethyl cadmium and diethyl tellurium were used as source materials and hydrogen radicals generated by rf induction coupled plasma were introduced into the reaction chamber. Heteroepitaxial growth on GaAs substrate were fairly well obtained in single crystal phase.n-type and p-type CdTe were studied on the layrs (thickness around 300 nm) grown epitaxially on semiinsulating GaAs substrate by radical assisted MOCVD technique working at a low pressure of 0.2 Torr. Gas phase iodine doping to obtaine n-type conductivity was carried by utilizing n-butyliodine as a dopant precursor. p-type doping was achieved by evaporating a thin layr (-30nm) of alkaline metal compounds such as NaTe on the surface of the undoped CdTe epitaxial layrs were thus obtained. Using this technique, p-and n-type CdTe layrs were grown on the intrinsic CdTe substrate (resistivity larger than 108 ohm cm) so as to form the p-i-n structure. Performance of detector, mainly dark current-voltage characteristics and x-ray photocurrent at different photon energies, have been studied.on the research way, we have invented the technique of excimer laser doping for II-VI compound semiconductor. This techniques are very promissing for actual device fabrication.