Development of integrated high-energy radiation imaging detector

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High energy radiation detectors have been developed with high energy resolution, FWHM, of below 20/0 of radiation energy. For device fabrications, Low temperature processing techniques were developed ; one is a remote plasma enhanced (RPE) MOCVD and the other is a laser processing techniques. Using RPE-MOCVD, heavy doped n-type CdTe epitaxial layers (1018/cm3) with iodine doping were resulted on the intrinsic CdTe single crystal and M-i-n structure detectors were fabricated with high resolution as above. As the laser processing techniques, excimer laser doping techniques were developed using In for n-type heavy doping and Sb for p-type heavy doping. As the other laser processing technology, multi-pixcel detector fabrication technologies were developed using laser ablation phenomena by excimer laser radiation. The multi-pixcel detector showed a good performance for arrayed pin CdTe diodes. These techniques are promising for the fabrication technology of the multi-pixcel detector with the high special resolution and high energy resolution.