PREPARATION OF SILICON BASED WIDEGAP SEMICONDUCTOR FILM FROM ORGANO-SILICON MATERIAL

点击翻译按钮获取中文摘要

The remote hydrogen plasma chemical vapor depositions (RHPCVDs) using organo-silicon as source compounds have been examined in terms of the mechanism of the activation steps and film formation. The deposition experiments performed for different configurations of the aftergrow tube (straight, with a light trap, and a radical trap) prove how the source materials are effective for the film formation. In the SiC film formation, it is shown that hydrogen radicals act on the Si-Si bond of the source material. In SiO_2 film formation, hydrogen and helium can not be effective for the SiO_2 formation, but argon, nitrogen and oxygen plasma radicals are effective for dissociationof tetraethoxysilane (TEOS). Furthermore, it is found that highly excited oxygen radical O(^1D) is valuable for the preparation of a high quality film without H_2O.Deposition of wide bandgap film includcing nitrogen was studied by a remote plasma method by using hexamethyldisilazane (HMDZ). Nitrogen plasma was used to intiate the deposition reaction by decomposing the organosilicon monomer. All the films obtained are optically transparent and have a band gap around 4eV.Electrical resistivities of the films lie in the region of 10^<14>-10^<15> ohm cm.In future, these research of CVD using organo-silicon and organo-metal are more required for the preparation of wide gap insulating film.