PREPARATION OF SILICON BASED WIDEGAP SEMICONDUCTOR FILM FROM ORGANO-SILICON MATERIAL

本文研究了以有机硅为源化合物的远程氢等离子体化学气相沉积（RHPCVDs）的活化步骤和成膜机理。对不同结构的后生管（直管、带光阱和带自由基阱）进行的沉积实验证明了源材料对薄膜形成的有效性。在SiC薄膜的形成过程中，氢自由基作用于源材料的Si-Si键。在SiO_2薄膜的形成过程中，氢和氦对SiO_2的形成不起作用，而氩、氮和氧等离子体自由基对TEOS的解离起作用。此外，发现高激发氧自由基O（^1D）对于制备高质量的无H_2O薄膜是有价值的。采用远端等离子体法制备了含氮宽禁带薄膜。采用氮等离子体分解有机硅单体，引发沉积反应。获得的所有薄膜都是光学透明的，并且具有约4eV的带隙。薄膜的电阻率在10^<14> ~ 10^<15>欧姆cm之间。今后，这些利用有机硅和有机金属的CVD研究更需要用于制备宽间隙绝缘薄膜。

The remote hydrogen plasma chemical vapor depositions (RHPCVDs) using organo-silicon as source compounds have been examined in terms of the mechanism of the activation steps and film formation. The deposition experiments performed for different configurations of the aftergrow tube (straight, with a light trap, and a radical trap) prove how the source materials are effective for the film formation. In the SiC film formation, it is shown that hydrogen radicals act on the Si-Si bond of the source material. In SiO_2 film formation, hydrogen and helium can not be effective for the SiO_2 formation, but argon, nitrogen and oxygen plasma radicals are effective for dissociationof tetraethoxysilane (TEOS). Furthermore, it is found that highly excited oxygen radical O(^1D) is valuable for the preparation of a high quality film without H_2O.Deposition of wide bandgap film includcing nitrogen was studied by a remote plasma method by using hexamethyldisilazane (HMDZ). Nitrogen plasma was used to intiate the deposition reaction by decomposing the organosilicon monomer. All the films obtained are optically transparent and have a band gap around 4eV.Electrical resistivities of the films lie in the region of 10^<14>-10^<15> ohm cm.In future, these research of CVD using organo-silicon and organo-metal are more required for the preparation of wide gap insulating film.