权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

PREPARATION OF SILICON BASED WIDEGAP SEMICONDUCTOR FILM FROM ORGANO-SILICON MATERIAL

有机硅材料制备硅基宽禁带半导体薄膜

基本信息

批准号：
06650363
负责人：
HATANAKA Yoshinori
金额：
$ 1.28万
依托单位：
SHIZUOKA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650363/
关键词：
Organo-silicon Rimote plasma Silicon carbide film Hexamethyldisilane SiO2 film hydrogen radical reaction Plasma CVD TEOS

项目摘要

The remote hydrogen plasma chemical vapor depositions (RHPCVDs) using organo-silicon as source compounds have been examined in terms of the mechanism of the activation steps and film formation. The deposition experiments performed for different configurations of the aftergrow tube (straight, with a light trap, and a radical trap) prove how the source materials are effective for the film formation. In the SiC film formation, it is shown that hydrogen radicals act on the Si-Si bond of the source material. In SiO_2 film formation, hydrogen and helium can not be effective for the SiO_2 formation, but argon, nitrogen and oxygen plasma radicals are effective for dissociationof tetraethoxysilane (TEOS). Furthermore, it is found that highly excited oxygen radical O(^1D) is valuable for the preparation of a high quality film without H_2O.Deposition of wide bandgap film includcing nitrogen was studied by a remote plasma method by using hexamethyldisilazane (HMDZ). Nitrogen plasma was used to intiate the deposition reaction by decomposing the organosilicon monomer. All the films obtained are optically transparent and have a band gap around 4eV.Electrical resistivities of the films lie in the region of 10^<14>-10^<15> ohm cm.In future, these research of CVD using organo-silicon and organo-metal are more required for the preparation of wide gap insulating film.

研究了以有机硅为源化合物的远程氢等离子体化学气相沉积（RHPCVD）的活化步骤和成膜机理。针对不同配置的aftergrow管（直的、具有光阱和自由基阱）进行的沉积实验证明了源材料如何有效地用于膜形成。在SiC膜形成中，氢自由基作用于源材料的Si-Si键。在SiO_2膜的形成过程中，氢和氦等离子体自由基对SiO_2膜的形成不起作用，而氩、氮和氧等离子体自由基对正硅酸乙酯（TEOS）的离解起作用。此外，还发现高激发态氧自由基O（^1D）对于在无水条件下制备高质量的薄膜具有重要的应用价值。采用氮气等离子体分解有机硅单体引发沉积反应。所得薄膜均为光学透明，禁带宽度在4 eV左右，电导率在10^<14>-10 ^<15>ohm cm范围内。今后，利用有机硅和有机金属CVD制备宽禁带绝缘薄膜的研究将更加迫切。