SPECIFIC FORMATION OF SILICON BASAD WIDEGAP SEMICONDUCTOR FILM FROM ORGANO-SILICON MATERIALS

由有机硅材料特定形成硅基底宽禁带半导体薄膜

• 批准号: 08455140
• 负责人: HATANAKA Yoshinori
• 金额: $ 2.62万
• 依托单位: RESEARCH INSTITUTE OF ELECTRONICS,SHIZUOKAUNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455140/
• 关键词: organo-silicon; Rimote plasma; SiC; Hexamethyldisilane; SiN; hydrogen radical; Trisdimethylaminosilane; Surface wave; ワイドギャップ半導体; CVD; SiC; SiN; SiO2

The remote plasma enhanced chemical vapor deposition (RPE-CVD) organo-silicon as source compounds have been examined in terms of the mechanism of the activation steps and formation. In the SiC film formation, it is shown that hydrogen radicals act on the Si-Si bonds of the source materials. It is found that hexamethyldisilane ia a soutable monomer for preparing SiC film. In the SiN film formation, using trisdimethyl-aminosilane as a source material is suitable for SiN film formation. However, it is found that the deposited film is unstable when the substrate temperature is at room temperature and stable above 300C.Microwave plasma sources were investigated for higt rate deposition in the remote plasma system. Slot antenna microwave applicator (SLAN) was examined for thin film depositions. This microwave plasma source is very stable in wide range of pressure, 0.01 to 10 Torr and we could get surface wave plasma excitation above 500W and higt concentration of over 1012 cm-3. By using this plasma, higt rate depositions of 300nm/min were carried out. It is found that the surface plasma is very soutable for the higt density plasma.In near fufure, these resarch of CVD using organo silicon and organo metals are more required for widegap semiconducting film technology.

以远端等离子体增强化学气相沉积（RPE-CVD）有机硅为源化合物，研究了其活化步骤和形成机理。在SiC薄膜的形成过程中，氢自由基作用于源材料的Si-Si键。发现六甲基二硅烷是制备碳化硅薄膜的理想单体。在SiN成膜过程中，采用三二甲基氨基硅烷作为源材料适合于SiN成膜。然而，发现沉积膜在基材温度为室温时不稳定，在300C以上稳定。研究了微波等离子体源在远程等离子体系统中的高速率沉积。对狭缝天线微波涂敷器（SLAN）进行了薄膜沉积试验。该微波等离子体源在0.01 ~ 10 Torr的宽压力范围内非常稳定，可以获得500W以上的表面波等离子体激发和1012 cm-3以上的高浓度。利用该等离子体可实现300nm/min的高速率沉积。结果表明，表面等离子体对高密度等离子体具有很强的可溶性。在不久的将来，这些利用有机硅和有机金属的CVD研究将更需要用于宽间隙半导体薄膜技术。

项目成果

T.Aoki et al.: "Deposition of crystalline germanium film in remote plasma after glow" Proc.4th Int.Symp.on Sputt.plasma Proc.221-226 (1997)

T.Aoki 等人：“辉光后远程等离子体中结晶锗薄膜的沉积”Proc.4th Int.Symp.on Sputt.plasma Proc.221-226 (1997)

A.M.Wrobel et al.: "Reactivity of alkylsilanes and alkylcarbosilanes in atomic hydrogen induced chemical vapor deposition" J.Electrochemi.Soc.145. 1060-1065 (1998)

A.M.Wrobel 等人：“原子氢诱导化学气相沉积中烷基硅烷和烷基碳硅烷的反应性”J.Electrochemi.Soc.145。

T.Aoki et al.: "Preparation high quality SiNx films by remote plasma CVD using TDMAS" Electrochem.Soc.Proc.97-25. 1207-1214 (1997)

T.Aoki 等人：“使用 TDMAS 通过远程等离子体 CVD 制备高质量 SiNx 薄膜”Electrochem.Soc.Proc.97-25。

T.Aoki et al.: "Preparation of higt quality SiNx film by remote plasma CVD using TDMAS" Electrochem.Soc.Proc.97-25. 1207-1214 (1997)

T.Aoki 等人：“使用 TDMAS 通过远程等离子体 CVD 制备高质量 SiNx 薄膜”Electrochem.Soc.Proc.97-25。

K.Sano et al.: "Low temperature deposition of SiC thin films on polymer surface by ECR plasma" Electrochem.Soc.Proc.97-25. 1417-1422 (1997)

K.Sano 等人：“通过 ECR 等离子体在聚合物表面低温沉积 SiC 薄膜”Electrochem.Soc.Proc.97-25。