DEVELOPMENT OF AL-CVD CLUSTER TOOL FOR ULSI MULTILEVEL INTERCONNECTION

本研究计划旨在发展以氢化二甲基铝（DMAH）为前驱物的铝化学气相沉积（Al-CVD）技术，以制作矽超大规模积体电路多层连线。在为期三年的项目中，我们进行了以下研究。(1)TiN阻挡层上Al-CVD的发展：对于覆盖式Al-CVD的接触/通孔Al填充，发展了Al沉积前的等离子体ClF_3预处理方法，该工艺适用于0.25- 0.13 μ m硅ULSI多层互连中的“填充+CMP”方法的接触/通孔Al填充。(2)“选择性淀积接触”的发展：我们发展了TiSi_2硅化物的低温氮化方法，在TiSi_2和Al之间形成阻挡层，所形成的阻挡层被证实是Ti-Si-N三元非晶态，厚度为10 nm，并具有足够的热处理阻挡特性。该薄膜基 ...更多信息 在亚0.1 μ m硅ULSI多层互连中，外延技术是实现“选择性淀积接触”的关键工艺。(3)Al-CVD集束工具的开发：前驱体的选择是制造应用的最关键问题。比较了DMAH和DMEAA（二甲基乙胺铝烷）作为Al-CVD前驱体的性能，从沉积特性和化学稳定性的角度来看，DMAH上级DMEAA。我们开发了一种液体输送和蒸发相结合的前驱体输送系统，用于1 μ m/min以上的高速Al沉积。我们设计并实现了6英寸双腔Al-CVD装置和8英寸Al-CVD组合工具，我们认为本研究项目的成果满足了低成本、低成本的要求。Si ULSI中的电阻率金属填充技术以及开发的技术和设备作为真实的制造技术是非常适用的Less

The purpose of this research project is to develop aluminum chemical vapor deposition (Al-CVD) technology using dimethylaluminum hydride (DMAH) as a precursor for Si ULSI multilevel interconnection. During the three-year project, we have carried out the following researches.(1) Development of Al-CVD on TiN barrier layer : For Al filling into contact/via holes by the blanket-mode AI-CVD, the plasmas ClF_3 pretreatment method prior to Al deposition has been developed, ibis process is applicable to Al filling into contact/via holes using "filling and CMP" method in the 0.25-0.13mum generation's Si ULSI multilevel interconnection.(2) Development of "selective-deposition contact" : We have developed the low-temperature nitration method of TiSi_2 silicide to form a barrier layer between TiSi_2 and Al. The barrier layer formed has been confirmed to be Ti-Si-N ternary amorphous, to be 10nm in thickness, and to have sufficient barrier characteristics against thermal treatment. This thin film ba … More rrier technology is a key process of the "selective-deposition contact" in the sub-0.1mum generation's Si ULSI multilevel interconnection.(3) Development of Al-CVD cluster tool : The precursor selection is the most critical issue for manufacturing application. We have compared DMAH and DMEAA (dimethylethylamine alane) as precursors for Al-CVD.The final conclusion is that DMAH is superior to DMEAA from the viewpoints of deposition characteristics and chemical stability. We have developed precursor delivery system in which the liquid delivery and vaporizing methods are combined for high rate Al deposition of over 1mum/min, On the basis of technologies developed in this project, we have designed and implemented 6-inch 2-chamber Al-CVD apparatus and 8-inch Al-CVD cluster tool.We believe that the achievements of this research project is fulfill the requirements for low-resistivity metal filling technology in Si ULSI and the developed technologies and apparatus are quite applicable as real manufacturing technology Less