DEVELOPMENT OF AL-CVD CLUSTER TOOL FOR ULSI MULTILEVEL INTERCONNECTION

开发用于 ULSI 多级互连的 AL-CVD 集群工具

• 批准号: 08555073
• 负责人: TSUBOUCHI Kazuo
• 金额: $ 11.33万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555073/
• 关键词: Multilevel interconnection; Aluminum CVD; Cluster-tool apparatus; DMAH; Direct Liquid Injection; Fully self-aligned-metallization technology; ClF_3クリーニング; AlCVD

The purpose of this research project is to develop aluminum chemical vapor deposition (Al-CVD) technology using dimethylaluminum hydride (DMAH) as a precursor for Si ULSI multilevel interconnection. During the three-year project, we have carried out the following researches.(1) Development of Al-CVD on TiN barrier layer : For Al filling into contact/via holes by the blanket-mode AI-CVD, the plasmas ClF_3 pretreatment method prior to Al deposition has been developed, ibis process is applicable to Al filling into contact/via holes using "filling and CMP" method in the 0.25-0.13mum generation's Si ULSI multilevel interconnection.(2) Development of "selective-deposition contact" : We have developed the low-temperature nitration method of TiSi_2 silicide to form a barrier layer between TiSi_2 and Al. The barrier layer formed has been confirmed to be Ti-Si-N ternary amorphous, to be 10nm in thickness, and to have sufficient barrier characteristics against thermal treatment. This thin film ba … More rrier technology is a key process of the "selective-deposition contact" in the sub-0.1mum generation's Si ULSI multilevel interconnection.(3) Development of Al-CVD cluster tool : The precursor selection is the most critical issue for manufacturing application. We have compared DMAH and DMEAA (dimethylethylamine alane) as precursors for Al-CVD.The final conclusion is that DMAH is superior to DMEAA from the viewpoints of deposition characteristics and chemical stability. We have developed precursor delivery system in which the liquid delivery and vaporizing methods are combined for high rate Al deposition of over 1mum/min, On the basis of technologies developed in this project, we have designed and implemented 6-inch 2-chamber Al-CVD apparatus and 8-inch Al-CVD cluster tool.We believe that the achievements of this research project is fulfill the requirements for low-resistivity metal filling technology in Si ULSI and the developed technologies and apparatus are quite applicable as real manufacturing technology Less

本研究项目的目的是开发铝化学气相沉积（Al-CVD）技术，利用二甲基氢化铝（DMAH）作为硅ULSI多层互连的前驱体。在三年的项目中，我们进行了以下研究。(1) TiN阻挡层上Al- cvd的发展：对于采用毡式AI-CVD填充Al到接触孔/过孔，开发了沉积Al前的等离子体ClF_3预处理方法，ibis工艺适用于0.25-0.13m代Si ULSI多层互连中采用“填充+ CMP”方法填充Al到接触孔/过孔。(2)“选择性沉积接触”的发展：我们开发了TiSi_2硅化物的低温氮化方法，在TiSi_2和Al之间形成了一层阻挡层。所形成的阻挡层已被证实为Ti-Si-N三元非晶，厚度为10nm，对热处理具有足够的阻挡特性。该薄膜技术是0.1 μ m以下一代Si ULSI多层互连中“选择性沉积接触”的关键工艺。(3) Al-CVD聚簇工具的开发：前驱体的选择是制造应用的关键问题。我们比较了DMAH和DMEAA（二甲基乙胺丙烯）作为Al-CVD前体。最后得出结论，从沉积特性和化学稳定性来看，DMAH优于DMEAA。我们开发了前驱体输送系统，该系统将液体输送和汽化方法相结合，可实现超过1mum/min的高速率Al沉积，在本项目开发的技术基础上，我们设计并实现了6英寸2室Al- cvd设备和8英寸Al- cvd集群工具。我们认为，本课题的研究成果满足了硅超低晶硅低电阻率金属填充技术的要求，所开发的技术和设备作为实际制造技术具有一定的适用性

项目成果

K.Tsubouchi: "Al-CVD Technology for Multilevel Metallization" Proc.of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, Boston. (1996)

K.Tsubouchi：“用于多级金属化的 Al-CVD 技术”Proc.of Advanced Metallization and Interconnect Systems for ULSI applications，1996 年，波士顿。

横山 道央: "シリコンシナログRF-CMOSデバイスの作製" 第46回応用物理学会学術講演会予稿集. 46. 31aZM3 (1998)

横山道雄：“硅合成 RF-CMOS 器件的制造”第 46 届日本应用物理学会年会论文集 46. 31aZM3 (1998)。

松橋 秀樹: "Al CVDにおけるアルミ有機金属ソースガスの比較" 電子情報通信学会技術報告(シリコン材料デバイス研究会). SDM97-96. 67-71 (1997)

Hideki Matsuhashi：“Al CVD 中铝有机金属源气体的比较”IEICE 技术报告（硅材料和器件研究小组）。

H.Matsuhashi: "Superiority of DMAH to DMEAA for Al CVD Technology" Advanced Metalization and Interconnect Systems for ULSI Applications in 1997,San Diego. (1997)

H.Matsuhashi：“Al CVD 技术中 DMAH 相对于 DMEAA 的优越性”，用于 ULSI 应用的先进金属化和互连系统，1997 年，圣地亚哥。

H.Matsuhashi, et al.: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metal-Semiconductor Field-Effect-Transistor" Jpn.J.Appl.Phys.Vol.37-6A. 3264-3267 (1998)

H.Matsuhashi 等人：“用于完全自对准金属半导体场效应晶体管的自对准 10 nm 势垒层形成技术”Jpn.J.Appl.Phys.Vol.37-6A。