DEVELOPMENT OF SINGLE-ELECTRON-TRANSISTOR

单电子晶体管的开发

• 批准号: 05555085
• 负责人: TSUBOUCHI Kazuo
• 金额: $ 11.97万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555085/
• 关键词: Colomb-Blockade; Tunneling Junction; Single-electron Transistor; Single-Crystal Aluminum CVD; Selective Deposition; Atomic-Resist Process; シングルエレクトロントランジスタ; Al CVD

Single electron devices based on Coulomb blockade phenomena in ultrasmall tunnel junctions are promising candidates of elemental logic devices in nanometer/angstrom-era's ULSI.Coulomb blockade phenomena has been observed at very low temperatures of mK-30K range. If the very small tunnel junctions of about 10nm^2 are fabricated with sufficient reproducibility, there is great possibility of room-temperature single electron logic devices. The aim of this work is to develop fundamentals of room-temperature single electron devices : (1) a new logic circuit configuration with feed-back loop and (2) nano fabrication technology based on selective Al CVD.At first, we have developed Monte Carlo simulator which can analyze the SET circuit. We have proposed a new circuit configuration ; the inverter circuit with feed-back loop, With the feed back loop, the circuit instability due to the atochastic tunneling is found to be suppressed.As nanometer fabrication technology, we have investigated selective Al CVD technology. The selective Al-CDV technology is a key technology to fabricated metal/insulator/metal ultrasmall tunnel junctions with sufficient reproducibility. We have proposed a new atomic hydrogen resist process based on the selective Al CVD.In the atomic hydrogen resist process, monolayr thick terminated-H on Si surface is exposed by the electron beam. The terminated-H which is irradiated by the electron beam is removed and then the surface is oxidized. Aluminum is selectively deposited on the remaining terminated-H area. Using this atomic hydrogen resist process, we have successfully fabricated the Al pattern and Al wires on Si surface.

基于超小隧道结中库仑阻塞现象的单电子器件是纳米/埃时代ULSI中最有希望的基本逻辑器件，在mK-30 K范围内的极低温度下已经观察到了库仑阻塞现象。如果能以足够的重复性制备出10nm^2左右的极小隧道结，那么室温单电子逻辑器件就有很大的可能性。本论文的目标是发展室温单电子器件的基础：（1）一种新的具有反馈回路的逻辑电路结构和（2）基于选择性Al CVD的纳米制造技术。我们提出了一种新的电路结构：带反馈回路的反相电路，通过反馈回路，发现由于随机隧穿引起的电路不稳定性被抑制。作为纳米制造技术，我们研究了选择性Al CVD技术。选择性Al-CDV技术是制备具有足够重复性的金属/绝缘体/金属超小型隧道结的关键技术。提出了一种基于选择性Al CVD的原子氢抗蚀剂新工艺，在原子氢抗蚀剂工艺中，用电子束曝光Si表面单层厚的终端H。去除被电子束照射的末端H，然后氧化表面。铝选择性地沉积在剩余的终止H区域上。利用这种原子氢抗蚀剂工艺，我们成功地在硅表面制作了铝图形和铝线。

项目成果

松橋 秀樹: "選択Al-CVD技術におけるプラズマレスClF_3表面クリーニング(II)" 1995年秋季第56回応用物理学会学術講演会(1995年8月). 26p-ZQ-12 (1995)

Hideki Matsuhashi：“选择性Al-CVD技术中的Plasmaless ClF_3表面清洁（II）”1995年秋季第56届日本应用物理学会学术会议（1995年8月26p-ZQ-12）。

H.Matsuhashi, et al: "Mirror-Like Surface Morphology of CVD-Al on TiN by CIF_3 Pretreatment" Advanced Materiallization for ULSI Applications in 1995, Tokyo. (1995)

H.Matsuhashi 等人：“通过 CIF_3 预处理在 TiN 上实现 CVD-Al 的镜面形貌”，用于 ULSI 应用的先进材料化，1995 年，东京。

H.Matsuhashi, et al: "Resistivity of CVD Al on TiN Pretreated with CIF_3" Extended Abstracts (The 43rd Spring Meeting, 1995) ; The Japan Society of Applied Physics and Related Societies. 27a-K-9.

H.Matsuhashi 等人：“用 CIF_3 预处理的 TiN 上的 CVD Al 的电阻率”扩展摘要（第 43 届春季会议，1995 年）；

K.Tsubouchi: "Metal CVD Technology(Invited Paper)" The 3rd IUMRS International Conference on Advanced Materials. S3-1 (1993)

K.Tsubouchi：“金属CVD技术（特邀论文）”第三届IUMRS国际先进材料会议。

K.Tsubouchi: "Area Selective Al CVD Technology(Invited Paper)" Proceedings of International Conference on Advanced Microelectronic Devices and Processing,Sendai. 77-84 (1994)

K.Tsubouchi：“区域选择性Al CVD技术（特邀论文）”先进微电子器件与加工国际会议论文集，仙台。