MOMENTARY INFORMATION PROCESSING SYSTEM

瞬时信息处理系统

基本信息

  • 批准号:
    07248103
  • 负责人:
  • 金额:
    $ 94.14万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1998
  • 项目状态:
    已结题

项目摘要

The purpose of this research project is to establish the basis of "brain and nerve in 21 st century's wireless multimedia."1. Nano-meter MOS device physicsResearch and development of 0.1um MOSFET process technology have been investigated. Breakdown phenomena of ultra-thin gate oxide were evaluated in relation to reliability. Furthermore, diffusion model of dopant in a shallow junction were proposed. These results are going to be adopted in TCAD system.2. Flexware systemFlexible functional four-terminal neu-MOS devices, vector quantization processor, most-significant- digit-first calculation scheme, have been developed for real-time motion picture compression. As a result, it is shown that ITOPS/1W processor, whose calculation power is 20,000 times as much as conventional one, can be realized.3. Optical wiring parallel processing LSI chipFor aiming optical wiring high-speed pattern recognition chip, a design method for optical wiring, a fabrication process for optical wiring, and integration technologies for light emission/receiver devices have been developed. Design and implementation methods for integrated optical waveguides have been established.4.Highly reliable SS-CDMA wireless communication systemGigahertz-band wireless multimedia information terminal has been investigated. For downlink access ; from basestation to handy terminal, packet SS-CDMA scheme using 2.46Hz front-end AIN SAW matched filter has been developed. For uplink access ; from terminal to basestation, approzisately-synchronized SS-CDMA cellular system using SAW convolver has been developed. CDMA channel number of 64ch/voice-rate is successfully oobtained in a 150m-radius cell.
本课题的研究目的是为“21世纪世纪无线多媒体中的大脑与神经”奠定基础。“1.纳米MOS器件物理研究对0.1 μ mMOSFET工艺技术的研究和发展进行了研究。超薄栅氧化层的击穿现象的可靠性进行了评估。提出了浅结中杂质的扩散模型。这些结果将被TCAD系统采用. Flexware系统灵活的功能四端neu-MOS器件,矢量量化处理器,最高有效位优先的计算方案,已经开发用于实时运动图像压缩。结果表明,ITOPS/1 W处理器的计算能力是传统处理器的2万倍.光布线并行处理LSI芯片为了瞄准光布线高速模式识别芯片,已经开发了光布线的设计方法、光布线的制造工艺以及光发射/接收器件的集成技术。建立了集成光波导的设计与实现方法。4.研究了高可靠性的扩频码分多址无线通信系统千兆赫兹波段无线多媒体信息终端。对于从基站到手持终端的下行链路接入,采用2.46Hz前端AIN SAW匹配滤波器的分组SS-CDMA方案已经被开发出来。对于上行链路接入,从终端到基站,近似同步的SS-CDMA蜂窝系统使用SAW卷积器已经开发出来。在150 m半径的小区中成功地获得了64 ch/话音速率的CDMA信道数。

项目成果

期刊论文数量(128)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Tomita: "A New Soft Breakdown Model for Thin Thermal SiO_2 Films Under Constant Current Stress"IEEE Trans. Electron Devices. Vol.46,No.1. 159-164 (1999)
T.Tomita:“恒定电流应力下薄热 SiO_2 薄膜的新软击穿模型”IEEE Trans。
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    0
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T. Tomita: "A New Soft Breakdown Model for Thin Thermal SiO2 Films Under Constant Current Stress"IEEE Trans. Electron Devices. Vol.46, No.1. 159-164 (1999)
T. Tomita:“恒定电流应力下薄热 SiO2 薄膜的新软击穿模型”IEEE Trans。
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    0
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K. Kotani: "Neuron-MOS Logic Gates"IEEE Transactions on Circuits and Systems-II : Analog and Digital Signal Processing. Vol.45, No.4. 518-522 (1998)
K. Kotani:“Neuron-MOS 逻辑门”IEEE Transactions on Circuits and Systems-II:模拟和数字信号处理。
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    0
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坪内和夫: "パーソナル通信とネットワーク-ハイテク・パーソナル通信技術の研究開発の動向" 電子情報通信学会 基礎・境界ソサイエティ大会. PA-3-6. 362-363 (1996)
Kazuo Tsubouchi:“个人通信和网络 - 高科技个人通信技术的研究和开发趋势”IEICE 基础和边界协会会议 PA-3-363 (1996)。
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    0
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K.Tsubouchi: "Compact Spread Spectrum Demodulator Using 2.4GHz Front-End SAW Correlator" Int.Conf.Personal Wireless Commun.,Victoria,Canada. 3B-1. (1995)
K.Tsubouchi:“使用 2.4GHz 前端 SAW 相关器的紧凑型扩频解调器”Int.Conf.Personal Wireless Commun.,加拿大维多利亚。
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    0
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TSUBOUCHI Kazuo其他文献

TSUBOUCHI Kazuo的其他文献

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{{ truncateString('TSUBOUCHI Kazuo', 18)}}的其他基金

Development of Digital Signal Processor for Ultra-Broadband Wireless Communication Control
超宽带无线通信控制数字信号处理器的研制
  • 批准号:
    20246059
  • 财政年份:
    2008
  • 资助金额:
    $ 94.14万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Ultra Low Power GHz-Band RF DSP for Software Defined Radio Terminals
适用于软件定义无线电终端的超低功耗 GHz 频段 RF DSP
  • 批准号:
    14205053
  • 财政年份:
    2002
  • 资助金额:
    $ 94.14万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Research of Combination RF/Analog/Digital Global Integration technology
射频/模拟/数字组合全球集成技术研究
  • 批准号:
    11305026
  • 财政年份:
    1999
  • 资助金额:
    $ 94.14万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
DEVELOPMENT OF AL-CVD CLUSTER TOOL FOR ULSI MULTILEVEL INTERCONNECTION
开发用于 ULSI 多级互连的 AL-CVD 集群工具
  • 批准号:
    08555073
  • 财政年份:
    1996
  • 资助金额:
    $ 94.14万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
DEVELOPMENT OF SINGLE-ELECTRON-TRANSISTOR
单电子晶体管的开发
  • 批准号:
    05555085
  • 财政年份:
    1993
  • 资助金额:
    $ 94.14万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
DEVELOPMENT OF HIGHLY-RELIABLE SPREAD-SPECTRUM WIRELESS MODEM
高可靠扩频无线调制解调器的开发
  • 批准号:
    02402034
  • 财政年份:
    1990
  • 资助金额:
    $ 94.14万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)

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用于早期检测电力线介质击穿迹象的高灵敏度光纤传感器的国际合作研究
  • 批准号:
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  • 财政年份:
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Study of Hierarchical Structure Change of Polymers under Application of High Voltage and Dielectric Breakdown Mechanism
高压作用下聚合物分级结构变化及介电击穿机理研究
  • 批准号:
    19H02782
  • 财政年份:
    2019
  • 资助金额:
    $ 94.14万
  • 项目类别:
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Integration of Solid-State Nanopores into Tuneable Nanofluidic Devices Using Controlled Dielectric Breakdown
利用受控介电击穿将固态纳米孔集成到可调谐纳米流体装置中
  • 批准号:
    491646-2015
  • 财政年份:
    2017
  • 资助金额:
    $ 94.14万
  • 项目类别:
    Vanier Canada Graduate Scholarship Tri-Council - Doctoral 3 years
Integration of Solid-State Nanopores into Tuneable Nanofluidic Devices Using Controlled Dielectric Breakdown
利用受控介电击穿将固态纳米孔集成到可调谐纳米流体装置中
  • 批准号:
    491646-2015
  • 财政年份:
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    Vanier Canada Graduate Scholarship Tri-Council - Doctoral 3 years
Study on dielectric breakdown, vacuum decay, turbulence and thermalization by superstring theory
超弦理论研究介电击穿、真空衰变、湍流和热化
  • 批准号:
    15H03658
  • 财政年份:
    2015
  • 资助金额:
    $ 94.14万
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    Grant-in-Aid for Scientific Research (B)
Integration of Solid-State Nanopores into Tuneable Nanofluidic Devices Using Controlled Dielectric Breakdown
利用受控介电击穿将固态纳米孔集成到可调谐纳米流体装置中
  • 批准号:
    491646-2015
  • 财政年份:
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    $ 94.14万
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    Vanier Canada Graduate Scholarship Tri-Council - Doctoral 3 years
Dielectric Breakdown of Hexagonal Boron Nitride Film for Gate Insulator
栅绝缘体用六方氮化硼薄膜的介电击穿
  • 批准号:
    26886003
  • 财政年份:
    2014
  • 资助金额:
    $ 94.14万
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Analysis of the mechanisms of dielectric breakdown in ceramic materials
陶瓷材料介电击穿机理分析
  • 批准号:
    198021916
  • 财政年份:
    2011
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    $ 94.14万
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Physical Modeling of Low-K Dielectric Breakdown and the Estimation of Full Chip Lifetime
低 K 电介质击穿的物理建模和全芯片寿命的估计
  • 批准号:
    0901576
  • 财政年份:
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Mechanisms of dielectric breakdown of ljquid coolants under quench condition and estimation of withstand voltage
淬火条件下液体冷却剂的介电击穿机理及耐压估算
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    08455136
  • 财政年份:
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