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Large capacity and high-speed random access memory devices using spin polarized electron tunneling current

利用自旋极化电子隧道电流的大容量高速随机存取存储器件

基本信息

批准号：
09305024
负责人：
NAOE Masahiko
金额：
$ 18.5万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09305024/
关键词：
Spin Valve Giant Magneto-resistance Tunneling Effect Exchange Bias Field Antiferromagnetic layer Si underlayer Co Cu multilayer スピン偏極電子デュアルスピンバルブ不揮発性メモリー Si_3N_4絶縁層

项目摘要

In this research, the Si/Ni-Fe composite underlayers were examined in order to improve the crystallinity and exchange bias characteristics of a reverse type of exchange coupled layers. Si underlayer promoted the formation of (111) texture of fcc crystallites in the Ni-Fe layer deposited on it. FeMn layer deposited on the Si/Ni-Fe bilayered underlayer revealed excellent (111) texture of fcc crystallites. The multilayered film with Si underlayer exhibited large exchange coupling field HィイD2ex.ィエD2 to the Ni-Fe films deposited on it after post-annealing process. It was found that HィイD2ex.1ィエD2 of the film with 50AィイD4oィエD4-thick Si underlayer took large value of about 300 Oe. Si/Ni-Fe composite underlayer improved crystallinity and (111) texture of the FeMn layer deposited on it, and sufficiently high HィイD2ex.ィエD2 could be applied to the upper Ni-Fe layer in a reverse type of exchange coupled layers by post-annealing in magnetic field.Co(15AィイD4oィエD4)/Cu(23AィイD4oィエD4) GMR (Giant Magneto-resistance) multilayers deposited on a-Si underlayer revealed exceedingly good crystallinity and on Ni-Fe underlayer revealed good periodicity and cleaness of interface. Annealing process varied these characteristic each other, and MR characteristics were changed on concerned with crystallographic characteristics. In the multilayers with Si underlayer, annealing at 250C improve the periodicity and the clearness at the interface, and the value of MR ratio was enhanced till 17.1%. Tunneling current characteristics were also observed in Ni-Fe/SiN/NiFe trilayered structure deposited on an a-Si underlayer.

在这项研究中，Si/Ni-Fe复合底层进行了研究，以改善结晶度和交换偏置特性的反向型交换耦合层。Si底层促进了Ni-Fe层中fcc晶粒的（111）织构的形成，在Si/Ni-Fe双层底层上沉积的FeMn层显示出良好的fcc晶粒的（111）织构。退火后的Ni-Fe多层膜对Si衬底的Ni-Fe多层膜具有较大的交换耦合场H_xD_2ex.xD_2。结果表明，Si/Ni-Fe复合底层提高了FeMn层的结晶度和（111）织构，和足够高的H_xD_2ex_xD_2可以通过后处理施加到反向类型的交换耦合层中的上部Ni-Fe层。在a-Si衬底上沉积的Co（15A）/Cu（23A/Cu）/Cu（23A/退火工艺使这些特性相互变化，并且与晶体学特性有关的MR特性也发生了变化。在以Si为衬底的多层膜中，250 ℃退火改善了膜层的周期性和界面的清晰度，MR比提高到17.1%。沉积在a-Si衬底上的Ni-Fe/SiN/NiFe三层结构也观察到了隧穿电流特性。