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Systematic Investigation for Greation of Nonvolatile Materials in Meteorite and Thier Optical Properties

陨石中非挥发性物质的生成及其光学性质的系统研究

基本信息

批准号：
08640560
负责人：
SAITO Yoshio
金额：
$ 1.54万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

项目摘要

9.1. Construction of Material creating methodIt should be noted that only to develop a new system to obtain high temperature is not important but discovery of new idea is to create of nonvolatile materials in a meteorite. Nonvolatile materials are evaporate by the aid of carbon heated by electric current. A carbobn thin film, is produced containing nonvolatile materials on a substrate. A oxide film remain of the materials on the substrate by heating in air. If the heat treatment is made in vacuum, a carbite film is also produced. We have obtained films of CeO2, WO and ZO.9.2. Growth of SiC by Reaction between Thin Films and Ultrafine Particles In the case of a reaction between carbon particles and SiO films, silicon carbide was produced above 90000 by the diffusion of Si atoms from SiO films into carbon particles, In the case of that between Si particles and carbon films, silicon carbide was produced above room temperature by the diffusion of carbon atoms into Si particles, In the above two cases, the direction of atom diffusion during the reaction was different.9.3. Correlation between the structure and Infrared spectra of SiO and SiO containing Fe or Mg atoms. Amorphous silicon oxide films have been studied by electron microscopy and infrared spectroscopy. The films consist of micro crystalites of SiO2 and Si. By the heat eatment, the micro crystallits transformed to the different phases. In SiO films containing of Fe or Mg, the transformation did not occur. Infrared spectra change with the structure changing. Astrophysical implication have been discussed.

9.1.应该注意的是，只有开发一个新的系统，以获得高温是不重要的，但新的想法是在陨石中创建非挥发性材料的发现。不挥发的物质在电流加热的碳的帮助下蒸发。在衬底上制备含有非挥发性材料的碳硼薄膜。通过在空气中加热，材料的氧化膜保留在基底上。如果在真空中进行热处理，也会产生碳化物膜。我们已经获得了CeO2，WO和ZO的薄膜。9.2。通过薄膜和超细颗粒之间的反应生长SiC在碳颗粒和SiO膜之间的反应的情况下，通过Si原子从SiO膜扩散到碳颗粒中，在90000 ℃以上产生碳化硅。在Si颗粒和碳膜之间的反应的情况下，通过碳原子扩散到Si颗粒中，在室温以上产生碳化硅，在上述两种情况下，反应过程中原子扩散的方向是不同的. SiO和含Fe、Mg原子的SiO的结构与红外光谱的相关性。用电子显微镜和红外光谱研究了非晶氧化硅薄膜。薄膜由SiO2和Si的微晶组成。通过热处理，微晶转变为不同的相。在含Fe或Mg的SiO膜中，没有发生相变。红外光谱随结构的变化而变化。讨论了其天体物理意义。