Exciton Dynamics in CdZnTeSe Quaternary Alloys

1.在掺杂的Cd_<1-X>中，Zn_XTe （x>0.7）有两种类型的受体，其中一种是所谓的a中心。另一个位于E_V+0.27eV.2。超薄ZnSe-ZnTe超晶格中S1和S2发射带的Huang-Rhys参数分别为3.5和7.5。构型坐标很好地解释了实验结果。用TOF测量了Cl掺杂Cd_<0.8>Zn_<0.2>Te的漂移迁移率。电子和空穴的迁移被所谓的陷阱控制所限制。捕获能分别为E_C-0.03和E_V+0.14eV。通过适当的衬底预处理，ZnSe/GaAs的界面态密度N_<SS>降低了一个数量级。在GaAs中隙下，N_<SS>, _<min>为1x10^<11>cm^<-2>eV^<-1>.5。最高质量的MEE/ALE-ZnSe/GaAs可以通过每次供应1/4 ML的生长模式生长。MBE-ZnSe在GaAs上再生长的均相界面处的势垒高度为0.7eV.7。对由ZnSe和超薄ZnTe组成的超晶格的S1和S2发射带进行了时间分辨PL测量。两个波段都包含浅层分量，可进一步分解为第一波段和慢波段。(1)第一个波段是由局限于长程电位波动的激振引起的。(2)发现用拉伸指数函数可以很好地描述慢带的衰减

1.In doped Cd_<1-X>Zn_XTe (x>0.7) have two types of acceptors from admittance spectroscopy and PL.One of them is so-called A-center. The other is located at E_V+0.27eV.2.Huang-Rhys parameters S in ultra thin ZnSe-ZnTe superlattices are 3.5 and 7.5 for S1 and S2 emission bands, respectively. The configuration coordinates explain well the experiments.3.The drift mobility of Cl doped Cd_<0.8>Zn_<0.2>Te was measured by TOF.The mobilty of electrons and holes were limited by so-called trap-controlled. The trap energies are E_C-0.03 and E_V+0.14eV,respectively.4.The density of interface states, N_<SS>, of ZnSe/GaAs reduces by one order by suitable pretrearment of the substrate. N_<SS>, _<min> under the midgap of GaAs is 1x10^<11>cm^<-2>eV^<-1>.5.MEE/ALE-ZnSe/GaAs with the highest quality can be grown by the mode of 1/4 ML growth per one supply of the element.6.The barrier height at the re-grown homo-interface of MBE-ZnSe on GaAs is 0.7eV.7.The time-resolved PL measurements were performed for S1 and S2 emission bands of superlattices consists of ZnSe and ultra thin ZnTe. Both bands involve shallow component, which can be further decomposed into each a first and slow band.(1) The first bands are attributed to excitions localized in the long-range potential fluctuations.(2) The decay of the slow bands is found to be well described by a stretched exponential function