Exciton Dynamics in CdZnTeSe Quaternary Alloys

1.In掺杂Cd_1-X&gt；Zn_xTe(x&gt；0.7)具有导纳光谱和PL两种受主类型，其中一种是所谓的A中心。另一个位于E_V_(0.27)eV_2。超薄ZnSe-ZnTe超晶格的黄里斯参数S在S_1和S_2发射带分别为3.5和7.5。构型坐标很好地解释了实验结果。3.用光电子能谱测量了掺氯Cd_lt；0.8&gt；zn_&lt；0.2&gt；Te的漂移迁移率，电子和空穴的迁移率受所谓的陷阱控制的限制。陷阱能分别为E_C-0.03和E_V 0.14 eV。4.通过适当的衬底处理，使界面态密度N_&lt；SS&gt；降低了一个数量级。GaAs中空隙下的N_&lt；SS&gt；，_&lt；min&gt；为1x10^&lt；5.采用1/4ML生长模式可以生长出质量最好的MEE/AlE-ZnSe/GaAs。6.在GaAs衬底上生长的MBE-ZnSe同质界面的势垒高度为0.7 eV.7。测量了超晶格的S1和S2发射带的时间分辨发光。这两个带都包含浅层分量，可进一步分解为第一带和慢带。(1)第一带归因于长程位势涨落中的激子。(2)慢带的衰减可用一个伸展的指数函数来很好地描述

1.In doped Cd_<1-X>Zn_XTe (x>0.7) have two types of acceptors from admittance spectroscopy and PL.One of them is so-called A-center. The other is located at E_V+0.27eV.2.Huang-Rhys parameters S in ultra thin ZnSe-ZnTe superlattices are 3.5 and 7.5 for S1 and S2 emission bands, respectively. The configuration coordinates explain well the experiments.3.The drift mobility of Cl doped Cd_<0.8>Zn_<0.2>Te was measured by TOF.The mobilty of electrons and holes were limited by so-called trap-controlled. The trap energies are E_C-0.03 and E_V+0.14eV,respectively.4.The density of interface states, N_<SS>, of ZnSe/GaAs reduces by one order by suitable pretrearment of the substrate. N_<SS>, _<min> under the midgap of GaAs is 1x10^<11>cm^<-2>eV^<-1>.5.MEE/ALE-ZnSe/GaAs with the highest quality can be grown by the mode of 1/4 ML growth per one supply of the element.6.The barrier height at the re-grown homo-interface of MBE-ZnSe on GaAs is 0.7eV.7.The time-resolved PL measurements were performed for S1 and S2 emission bands of superlattices consists of ZnSe and ultra thin ZnTe. Both bands involve shallow component, which can be further decomposed into each a first and slow band.(1) The first bands are attributed to excitions localized in the long-range potential fluctuations.(2) The decay of the slow bands is found to be well described by a stretched exponential function