Fabrication of Si/SiOィイD22ィエD2-based crystalline heterostructures by using low-energy oxygen implantation during Si molecular beam epitaxy

A novel technique is developed to create truly "epitaxial" Si/SiO D22 -based heterostructures.The new technique is a variant of Si molecular beam epitaxy which features a low energy oxygen ionimplanter,参考作为一种混合基因。Controlling the kinetics of internal oxidation and disruption of Siencompassed by a wide-gap SiO D22 - D2 matrix in a separation-by-implanted oxygen (SIMOX) geometryallows a rich variety of Si/SiO D22 - and SiGe/SiO D22 -based quantum nanostructures.Fabrication of Si quantum wells，quantum wires使用V-grooved substrate or cleave-edges of SIMOX，and a stacked array of quantum dots have been successful. What characterizes most such a widespectrum of quantum structures is the fact that the Si or SiGe features maintain crystallinecoherence transmitted from the substrate. As a resultSi and SiGe quantum dots are of highly-oriented nature, i.e.the feature hardly attainable otherwise.In view of conceivable applications, an attempt…更多was made to fabricate key components in the field of optoelectronics. For example，creating Bragg mirrors offering a normal incidence reflectance of 90% at设计的stop-bandwavelengths has enjoyed much success其中turn has a high potential for use as a virtual substrate for regrowth. in the same contextvirtual substrate，SiGe-OI structures recently have become of particular importance to the electronics as they not onlycomply with the demand for SOI but a high electron mobility transistor可以远程监测simply by growing a tensilely-strained Si channel atop. Thoroughly studying the energetics andkinetics of the evolution of SiGe-OI，这已经被发现是一个很好的SiGe-OI is permitted in a narrow window region in tens of the Gecontents and accordingly there is a x-value ceiling (x<0.3) for the startingD21-x D2Ge D2x D2x D2 layers which may or may not have been strain-relaxed. Selective oxidationof Si and concomitant desorption of GeO due to a thermal budget given to the samples during theannealing step of the SIMOX process is responsible for the erosion or total loss of SiGe for xvalues larger than 0.3. In contrast, by using SiGe alloys with x<0.18，a record value of 8-nm was obtained as the thickness of the top SiGe.An interesting observation madefor SiGe-OI is the development of a strong optical absorption band loound 1.2eV. the newband shows up only after oxidation, is originated from the near-surface region which wasconfirmed as quenching of the bulk photocurrent for a series of MSM Schottky-type photodetectors in bulka lateral configuration. Less

A novel technique is developed to create truly "epitaxial" Si/SiOィイD22ィエD2-based heterostructures. The new technique is a variant of Si molecular beam epitaxy which features a low-energy oxygen ion implanter, referred to as hybrid epitaxy. Controlling the kinetics of internal oxidation and disruption of Si encompassed by a wide-gap SiOィイD22ィエD2 matrix in a separation-by-implanted oxygen (SIMOX) geometry allows a rich variety of Si/SiOィイD22ィエD2- and SiGe/SiOィイD22ィエD2-based quantum nanostructures. Fabrication of Si quantum wells, quantum wires using either a V-grooved substrate or cleave-edges of SIMOX, and a stacked array of quantum dots have been successful. What characterizes most such a wide spectrum of quantum structures is the fact that the Si or SiGe features maintain crystalline coherence transmitted from the substrate. As a result, Si and SiGe quantum dots are of highly-oriented nature, i.e., the feature hardly attainable otherwise.In view of conceivable applications, an attempt … More was made to fabricate key components in the field of optoelectronics. For example, creating Bragg mirrors offering a normal incidence reflectance of 90% at designated stop-band wavelengths has enjoyed much success, which in turn has a high potential for use as a virtual substrate for regrowth. In the same context of virtual substrate, SiGe-OI structures recently have become of particular importance to the electronics as they not only comply with the demand for SOI but a high electron mobility transistor can be readily obtained simply by growing a tensilely-strained Si channel atop. Thoroughly studying the energetics and kinetics of the evolution of SiGe-OI, it has been found that a good SiGe-OI is permitted in a narrow window region in tens of the Ge contents and accordingly there is a x-value ceiling (x<0.3) for the starting SiィイD21-xィエD2GeィイD2xィエD2 layers which may or may not have been strain-relaxed. Selective oxidation of Si and concomitant desorption of GeO due to a thermal budget given to the samples during the annealing step of the SIMOX process is responsible for the erosion or total loss of SiGe for x values larger than 0.3. In contrast, by using SiGe alloys with x<0.18, a record value of 8-nm was obtained as the thickness of the top SiGe.An interesting observation made for SiGe-OI is the development of a strong optical absorption band located around 1.2eV. The new band shows up only after oxidation and is originated from the near-surface region which was confirmed as quenching of the bulk photocurrent for a series of MSM Schottky-type photodetectors in a lateral configuration. Less