Development of Silicon-Optical-Amplifier Based on Radiative Recombination in the Quantum Rod-like Electronic System Associated with {311}-Defects

通过利用晶体硅中发展的量子线状{311}棒缺陷的大多数独特电子特性，帮助打破固有的间接瓶颈，尝试创建可在低温下操作的波导硅（Si） led和亚洲光放大器。为了创建基于这种“可驯服缺陷”的硅基有源光子器件，我们已经演示了(1)缺陷的按需位置选择产生，(2)电流注入下的硅光放大器，(3)新的增益增强局域电子系统的识别和利用，以及(4)具有30 mhz调制带宽的波导led在室温下工作。

An attempt was made to create a waveguide silicon(Si)-LED and aSi-optical-amplifier operable at cryogenic temperature by making most of the uniqueelectronic properties of quantum wire-like {311}-rod-defects developing in crystalline Sithat help break the inherent indirect bottleneck. To create Si-based active photonic devicesbased on such “tamable defects”, we have demonstrated (1) on-demand position-selectivecreation of defects, (2) silicon-optical-amplifier under current injection, (3) identificationand utilization of a new gain-boosting localized electronic system, and (4) a waveguide-LEDwith a 30-MHz modulation bandwidth operated at room temperature.