Real space transfer of electrons in a Si-based quantum structure and its application to infrared generation

硅基量子结构中电子的真实空间转移及其在红外产生中的应用

• 批准号: 12450005
• 负责人: FUKATSU Susumu
• 金额: $ 5.31万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450005/
• 关键词: light-emitting silicon; SiGe; Si heterostructures; intersubband luminescence; infrared radiation; two level system; real space transfer; SiGe-OI; Auger recombination; シリコンベース量子構造; エネルギー緩和; 遠赤外光発生; 異常反射率; シリコンチャネル高移動度トランジスタ; 電子・光閉じ込め; シリコン系半

Intra-band transitions hold promise in realizing light-emitting silicon in that it does not suffer from the otherwise inextricable indirect band-gap of Si. In this study, we explored real space transfer of electrons in pseudomorphic SiGe/Si heterosturctrues in an attempt to generate infrared radiation due to intersubband transitions.A cascade design is widely accepted as being representative in terms of intersubband luminescence. Quantum barriers, superlatices with tuned resonance states, however, are some of what make it arguably the state-of-the-art technology, which is highly complicated and as such not easily transplanted into the SiGe-system. A two level system consisting of the ground state of a quantum well with its potential barrier was considered here instead. Carriers will be real-space-transferred to the barrer with a low drift mobility as they are accelerated along the quantum well having a higher mobility to the point where excess kinetic energy allows relaxation to set in … More via scattering.Here we report the characteristics of real space transfer of carriers in SiGe/Si heterostructures and the attempt of light/carrier confinement based on a SiGe-OI substrate. Carrier mobilities were evaluated by optical means using a masked time-of-flight technique, which measures the ambipolar diffusivity of excitons. The diffusivity of the other of 10cm^2/s was obtained, which increased with increasing temperature while the thermal escape of carriers from the well hampered the measurement above 100K. The mobility values were not much different regardless of what constitutes the channel, SiGe or Si, which indicates that the mobility inevitably dwindled due to the roughness scattering because we had to choose a narrow width to comply with the energy ceiling of the potential barrier at a fairly large Ge content. This along with bound-state energy calculation suggests that one should target a small Ge content and a wide well or a single-heterostructure rather than quantum well. Real space transfer of electrons due to both electric biasing and phonon scattering was clearly observed in type-I SiGe/Si quantum wells, which fortuitously allowed us to develop a color-tunable light-emitter made of Si. It is also pointed out that spectroscopy of infrared generation under current injection should avoid the confusion with the background including the blackbody radiation from samples. On the other hand, a high-energy ion-implantation was found to be essential to the SiGe-OI substrate creation for the purpose of this study. Besides these, it was found through a series of luminescence experiments that the otherwise dissipative Auger recombination potentially competing with gain at an increased excitation density could be suppressed simply by implementing a SiGe/Si heterostructure. Less

带内跃迁在实现发光硅方面具有希望，因为它不会受到Si的不可分割的间接带隙的影响。本文研究了赝晶SiGe/Si异质结中电子的真实的空间转移，并尝试通过子带间跃迁产生红外辐射，其中级联设计被广泛认为是子带间发光的代表。然而，量子势垒，具有调谐共振态的超晶格，是使其成为最先进技术的一部分，这种技术非常复杂，因此不易移植到SiGe系统中。这里考虑的是一个由量子阱的基态和势垒组成的两能级系统。载流子将被实空间转移到具有低漂移迁移率的势垒，因为它们被沿着具有较高迁移率的量子阱加速到过量动能允许弛豫开始的点 ...更多信息 本文报道了SiGe/Si异质结构中载流子的真实的空间传输特性以及基于SiGe-OI衬底的光/载流子限制的尝试。载流子迁移率通过光学手段使用掩蔽的飞行时间技术进行评估，该技术测量激子的双极扩散率。另一个样品的扩散系数为10 cm ^2/s，随着温度的升高，扩散系数增大，但在100 K以上，载流子的热逃逸阻碍了测量。无论沟道是SiGe还是Si，迁移率值都没有太大的不同，这表明迁移率由于粗糙度散射而不可避免地减小，因为我们必须选择窄宽度以符合相当大的Ge含量下势垒的能量上限。这沿着束缚态能量的计算表明，应该针对小的Ge含量和宽阱或单异质结构而不是量子阱。在I型SiGe/Si量子威尔斯阱中观察到了电子在电场偏置和声子散射作用下的真实的空间转移，这使我们能够研制出一种颜色可调的Si发光器件。同时指出，电流注入下的红外光谱学应避免与样品的黑体辐射等背景相混淆。另一方面，高能量离子注入被发现是必不可少的SiGe-OI基板创建本研究的目的。除此之外，通过一系列的发光实验发现，在增加的激发密度下可能与增益竞争的耗散俄歇复合可以简单地通过实施SiGe/Si异质结构来抑制。少

项目成果

Si/SiO_xDBR内のErドープSiの発光短寿命化

Si/SiO_xDBR 中掺铒硅的发光寿命较短

• 发表时间: 2002
• 作者: Y.Sugawara;et al.;菅原由隆
• 通讯作者: 菅原由隆

Si(Ge)/oxide-based heterostructures and their applications to optoelectronics

Si(Ge)/氧化物基异质结构及其在光电子领域的应用

• 发表时间: 2000
• 期刊: Applied Surface Science 159/160
• 作者: (分担著)雨宮慶幸;S.Fukatsu
• 通讯作者: S.Fukatsu

Triggered Electroluminescence from a Strained Si_1-xGe_x/Si Single Quantum Well

应变 Si_1-xGe_x/Si 单​​量子阱的触发电致发光

• 发表时间: 2005
• 期刊: Proceedings of IEEE the Second IEEE International Conference on Group IV Photonics
• 作者: K.Kuwajima;M.Arai;T.Inobe;K.Ito;M.Nakao;K.Maki;K.Kamagata;H.Kihara;Y.Amemiya;N.Yasuhara
• 通讯作者: N.Yasuhara

Si_1-xGe_x/Si歪量子井戸の再結合における表面電子共鳴

Si_1-xGe_x/Si应变量子阱复合中的表面电子共振

• 发表时间: 2004
• 作者: 菅原由隆

定常光励起蛍光によるSi_1-xGe_x/Si歪量子井戸間接励起子の面内輸送の評価

利用稳态光激发荧光评估Si_1-xGe_x/Si应变量子阱间接激子的面内输运

• 发表时间: 2003
• 作者: 澤田和宏