Process Diagnostics in High-Aspect-Ratio Patterns by Microscopic Interferometry

需要在ULSI （超大尺度集成）制造，一个用于高长宽比模式处理的原位监测工具。在这一工作中，我们以开发和性能为目标，以一种新的诊断方法为基础，与光学显微镜结合在一起。在第一年，我们开发了二维干涉仪显微镜的基本结构，使用单色激光源、Michelson干涉仪和高灵敏度CCD （电荷耦合器件）摄像机。在第二年，我们努力解决一个棘手的问题，以通过机械振动来解决机械上的硬结构和计算技术来弥补破坏。在这个项目的最后一半，我们已经尝试将这一技术应用到现实主义的问题中。One of the urgent proManagement in the currently used plasma etching process of SiO2 is the improvement of etching selectivity to underlying or protecting mater\such as Si， SiイイD23イイD24イイD2 and photo-resist。我们在不同等离子体条件下的各种材料条件下使用了这一方法，以精确地测量速率。从气体相位中的反应和在底层表面上的反应的结果得到了确定，以实现更好的选择。

In ULSI (ultra large scale integration) fabrication, an in-situ monitoring tool for high-aspect-ratio pattern processing is required. In this work we have aimed the development and its performance characterization of a new diagnostic method based on an interferometric technique combined with an optical microscope. In the first year, we developed the basic construction of two-dimensional interferometric microscopy by using a monochromatic laser source, a Michelson interferometer and a high sensitive CCD (charge coupled device) camera. In the second year, we put much effort to solve a tough problem due to the disturbance by mechanical vibrations by adopting a mechanically stiff structure and a computational technique for compensating the distortion.In the latter half of this project, we tried to apply this technique to a realistic problem. One of the urgent problem in the currently used plasma etching process of SiO2 is the improvement of etching selectivity to underlying or protecting materials such as Si, SiィイD23ィエD2 NィイD24ィエD2 and photo-resist. We used this method in the precise in-situ measurement of etching rates for these materials under various plasma conditions of fluorocarbon gases. From the results the reactions in the gas phase and on the substrate surface and their controlling methods are argued for realizing better selectivity.