Process Diagnostics in High-Aspect-Ratio Patterns by Microscopic Interferometry

通过显微干涉测量法对高纵横比图案进行过程诊断

• 批准号: 10555022
• 负责人: TACHIBANA Kunihide
• 金额: $ 6.91万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10555022/
• 关键词: Plasma Processing; Microstructure Etching; Microscopic Interferometry; In-process Monitoring; Two-dimensional Shape Monitoring; Two-dimensional Rate Monitoring

In ULSI (ultra large scale integration) fabrication, an in-situ monitoring tool for high-aspect-ratio pattern processing is required. In this work we have aimed the development and its performance characterization of a new diagnostic method based on an interferometric technique combined with an optical microscope. In the first year, we developed the basic construction of two-dimensional interferometric microscopy by using a monochromatic laser source, a Michelson interferometer and a high sensitive CCD (charge coupled device) camera. In the second year, we put much effort to solve a tough problem due to the disturbance by mechanical vibrations by adopting a mechanically stiff structure and a computational technique for compensating the distortion.In the latter half of this project, we tried to apply this technique to a realistic problem. One of the urgent problem in the currently used plasma etching process of SiO2 is the improvement of etching selectivity to underlying or protecting materials such as Si, SiィイD23ィエD2 NィイD24ィエD2 and photo-resist. We used this method in the precise in-situ measurement of etching rates for these materials under various plasma conditions of fluorocarbon gases. From the results the reactions in the gas phase and on the substrate surface and their controlling methods are argued for realizing better selectivity.

在超大规模集成电路（ULSI）制造中，需要一种用于高深宽比图形加工的原位监测工具。在这项工作中，我们的目标是开发和其性能表征的一种新的诊断方法的基础上，结合光学显微镜的干涉技术。在第一年，我们开发了二维干涉显微镜的基本结构，通过使用单色激光源，迈克尔逊干涉仪和高灵敏度CCD（电荷耦合器件）相机。第二年，我们采用了机械刚性结构和补偿变形的计算技术，努力解决了由于机械振动干扰而产生的坚韧。在本项目的后半部分，我们尝试将该技术应用于实际问题。在目前使用的SiO2等离子体刻蚀工艺中，迫切需要解决的问题之一是提高对诸如Si、Si衬底D23、Si衬底D24、Si衬底D23、Si衬底D2、Si衬底D24、Si衬底D2和光刻胶等底层或保护层的刻蚀选择性。我们使用这种方法在精确的原位测量这些材料的蚀刻速率在各种等离子体条件下的氟碳气体。根据实验结果，讨论了气相反应和基片表面反应及其控制方法，以实现更好的选择性。

项目成果

Hideki Motomura: "Analysis for Chemical Bonds Formed on SiO_2 and Si_3N_4 Surfaces in C_4F_8 and C_5F_8 Plasmas for Selective Etching Processes"Extended Abstracts of International Workshop on Basic Aspects of Non-equilibrium Plasmas Interacting with Surfa

本村秀树：“Analysis for Chemical Bonds Formed on SiO_2 and Si_3N_4 Surfaces in C_4F_8 and C_5F_8 Plasmas for Selective Etching Processes”非平衡等离子体与表面相互作用基本方面国际研讨会扩展摘要

Kunihide Tachibana, Kazuo Takahashi, Takeshi Kawasaki and Shin-ich Imai: "Reactions of Perfluoro-Compound Alternatives in SiOィイD22ィエD2 Plasma Etching Studied by Laser Spectroscopic and Mass Spectrometric Techniques"Proc. 14ィイD1thィエD1 Int. Symposium on Pla

Kunihide Tachibana、Kazuo Takahashi、Takeshi Kawasaki 和 Shin-ich Imai：“通过激光光谱和质谱技术研究 SiOiD22D2 等离子体蚀刻中全氟化合物替代品的反应”研讨会论文集。

Kunihide Tashibana: "Behavior of F Atoms and CF_2 Radicals in Fluorocarbon Plasmas for SiO_2/Si Etching"Jpn. J. Appl. Phys.. 38.7B. 4367-4372 (1999)

Kunihide Tashibana：“F原子和CF_2自由基在氟碳等离子体中用于SiO_2/Si蚀刻的行为”Jpn。

Shin-ichi Imai: "Analysis of Product Species in Capacitively Coupled C_5F_8 Plasma by Electron Attachment Mass Spectroscopy"Jpn. J. Appl. Phys.. 38.8A. L888-L891 (1999)

Shin-ichi Imai：“通过电子附着质谱分析电容耦合 C_5F_8 等离子体中的产物种类”Jpn。

Kunihide Tachibana, Hideaki Kamisugi and Takeshi Kawasaki: "Behavior of F Atoms and CFィイD22ィエD2 Radicals in Fluorocarbon Plasmas for SiOィイD22ィエD2/Si Etching"Jpn.J.Appl.Phys.. 38-7B. 4367-4372 (1999)

Kunihide Tachibana、Hideaki Kamisugi 和 Takeshi Kawasaki：“用于 SiO22D2/Si 蚀刻的氟碳等离子体中 F 原子和 CF22D2 自由基的行为”Jpn.J.Appl.Phys.. 38-7B .4367-4372 (1999)