Precise analysis of extended electronic structure in organic thin films by in situ normal and inverse photoemission spectroscopies
Precise analysis of extended electronic structure in organic thin films by in situ normal and inverse photoemission spectroscopies
批准号:
11304049
负责人:
SATO Naoki
金额:
$23.47万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001
中文摘要
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英文摘要
This research is aiming at constructing a measurement system which enables us to observe in situ extended electronic structure of the states below and above the energy gap in the same specimen of an organic thin film by means of ultraviolet photoemission spectroscopy (UPS) and inverse photoemission spectroscopy (IPES) with comparable measurement precisions. Such a research was motivated by the importance of grasping the extended electronic structure in thin films of organic semiconductors in particular as directly as possible, since those films attract increasing interests as key materials toward molecular electronic devices.This research has been started on the basis of our previous studies on the electronic structures in organic thin films using our home-built apparatuses, such as a UPS one for the measurement of valence electronic states and an IPES one in the BIS mode for the measurement of low-energy unoccupied states. Then, we have conceived an idea of combination of the two kinds of photoemission spectroscopies with even better performance and have designed a new apparatus also furnished with instruments for preparation and characterization of a sample specimen films. Simultaneously, we have collected various experimental data concerning organic thin films to make good use of them for determining detailed physical parameters and specifications for the new apparatus ; especially, IPES measurements of thin films of several organic materials were carried out to know the critical situation of this method, as only a few IPES studies on organic thin films have been reported so far.Thus, we have investigated the practical conditions needed for our new apparatus which permits in situ observation of both valence and unoccupied electronic states in a particular thin film as precisely as possible.As a result, we have almost constructed such an apparatus with a few points in question open to further discussion.
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G.J.Ashwell, et al.: "Monolayer films of U-shaped molecules : suppression of the aggregation-induced second-harmonic generation of squaraine dyes by guest-host interactions"J.Mater.Chem.. 10. 2473-2476 (2000)
G.J.Ashwell 等人:“U 形分子的单层膜:通过客体-主体相互作用抑制方酸菁染料聚集诱导的二次谐波产生”J.Mater.Chem.. 10. 2473-2476 (2000)
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M.Mitsuya, N.Sato: "Energy shift for core electron levels of chemisorbed molecules observed by X-ray photoelectron spectroscopy in the course of monolayer growth on a Si(111) surface"Langmuir. 15. 2099-2102 (1999)
M.Mitsuya, N.Sato:“在 Si(111) 表面单层生长过程中,通过 X 射线光电子能谱观察到化学吸附分子核心电子能级的能量转移”Langmuir。
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K.Yoshida, et al.: "Dependence of optical absorption spectra on structures of bis(1,2-benzoquinonedioximato)Pt(II) thin films"Mol. Cryst. Liq. Cryst.. 342. 121-126 (2000)
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N.Sato, et al.: "Molecular orbital calculations of nonlinear optical parameters for test molecules of a highly amphoteric and polar molecule(HAPM)"Mol. Cryst. Liq. Cryst.. 355. 319-329 (2001)
N.Sato 等人:“高两性极性分子 (HAPM) 测试分子的非线性光学参数的分子轨道计算”Mol。
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H.Yoshida, et al.: "Unoccupied electronic states of 3d-transition metal phthalocyanines (MPc : M = Mn, Fe, Co, Ni, Cu and Zn) studied by inverse photoemission spectroscopy"J. Elect. Spectrosc. Relat. Phenom.. 121. 83-91 (2001)
H.Yoshida 等人:“通过反光电子能谱研究 3d 过渡金属酞菁的未占据电子态(MPc:M = Mn、Fe、Co、Ni、Cu 和 Zn)”J.
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