Semiconductor devices by the use of new interfacial reactions and interfacial compounds.
利用新的界面反应和界面化合物的半导体器件。
基本信息
- 批准号:11355003
- 负责人:
- 金额:$ 20.85万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2001
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have developed the following new semiconductor processes in order to improve the electrical characteristics of metal-oxide-semiconductor (MOS) diodes : 1) elimination of interface states at Si/SiO_2 interfaces by "cyanide treatment", 2) low temperature formation of Si/SiO_2 structure by the use of chemical methods, and 3) low tempertaure formation of Si/silicon oxynitride structure by the use of the low energy impact plasma method. In the case of 1), it has been found that interface states are eliminated by the selective reaction of cyanide ions with Si dangling bonds by the immersion of the Si/SiO_2 structure in KCN solutions. Si-CN bonds resulted from the cyanide treatment possess a high bond energy of 4.5 eV, leading to the thermal stability at 800℃ and the irradiation stability. It is found that contamination by K^+ ions can be completely prevented by the inclusion of crown-ether (C_<12>H_<24>O_6) in the KCN solutions. The leakage current is markedly decreased by the cyanide tre … More atment. In the case of 2), it is found that SiO_2 layers can be formed at 〜300 ℃ by the use of the catalytic activity of a platinum (Pt) layer. When the Pt treatment which involves the deposition of a Pt layer followed by the heat treatment at 〜300 ℃ in oxygen is performed on 〜2 nm SiO_2/Si structure, the density of the leakage current is decreased to 〜1/200. O^- ions produced by the catalytic activity of Pt are injected to SiO_2, leading to the passivation of defects and the formation of uniform SiO_2 layers. Methods of the fabrication of Si and SiC-based MOS diodes at 〜200 ℃ are developed by the use of perchloric acid. The fabricated MOS diodes possess low interface state densities even without hydrogen treatment. In the case of 3), a method of the formation of silicon oxynitride layers at 25〜450 ℃ is developed by the use of nitrogen plasma generated by the low energy impact method. Plasma damages introduced in the silicon oxynitride layers are found to be eliminated by the use of method 2) (i.e. Pt treatment). Less
为了改善金属氧化物半导体(MOS)二极管的电学特性,我们开发了以下新的半导体工艺:1)通过“氰化处理”消除Si/SiO_2界面态,2)使用化学方法低温形成Si/SiO_2结构,3)使用低能冲击等离子体方法低温形成Si/硅氮化氧结构。在1)的情况下,通过将Si/SiO_2结构浸泡在KCN溶液中,发现氰化物离子与Si悬空键的选择性反应消除了界面态。氰化处理生成的Si-CN键具有4.5 eV的高键能,具有800℃的热稳定性和辐照稳定性。发现在KCN溶液中加入冠醚(C_<12>H_<24>O_6)可以完全防止K^+离子的污染。经氰化物处理后,泄漏电流明显降低。在2)的情况下,利用铂(Pt)层的催化活性,可以在~ 300℃下形成SiO_2层。当对~ 2 nm SiO_2/Si结构进行Pt处理(先沉积Pt层,再在~ 300℃氧气中热处理)时,泄漏电流密度降至~ 1/200。将Pt的催化活性产生的O^-离子注入到SiO_2中,使缺陷钝化,形成均匀的SiO_2层。研究了用高氯酸在~ 200℃下制备硅基和硅基MOS二极管的方法。制备的MOS二极管即使未经氢处理也具有较低的界面态密度。在3)的情况下,利用低能冲击法产生的氮等离子体,开发了在25 ~ 450℃下形成氮化硅氧层的方法。在氧化氮化硅层中引入的等离子体损伤发现可以通过使用方法2(即Pt处理)来消除。少
项目成果
期刊论文数量(38)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H.Kobayashi: "New spectroscopic method for the observation of semiconductor interface states and its application to MOS structure"The Workshop of Solid State Surfaces and Interfaces II. 4 (2000)
H.Kobayashi:“观察半导体界面态的新光谱方法及其在MOS结构中的应用”固体表面与界面研讨会II。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
T.Yuasa: "Reduction in leakage current density of Si-based metal-oxide-semiconductor structure by use of catalytic activity of a platinum overlayer"Appl. Phys. Lett.. 77. 4031 (2000)
T.Yuasa:“利用铂覆盖层的催化活性降低硅基金属氧化物半导体结构的漏电流密度”Appl。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
A.Asano: "Dependence of interface states for ultrathin SiO_2/Si interfaces on the oxide atomic density determined from FTIR measurements"Surf. Sci.. 427-428. 219 (1999)
A.Asano:“超薄 SiO_2/Si 界面的界面态对 FTIR 测量确定的氧化物原子密度的依赖性”Surf。
- DOI:
- 发表时间:
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- 影响因子:0
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H.Kobayashi: "New spectroscopi method for the observation of semiconductor interface states and its application to MOS structure"Acta Phys. Slov.. 50. 461 (2000)
H.Kobayashi:“观察半导体界面态的新光谱方法及其在 MOS 结构中的应用”Acta Phys。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T. Sakurai: "SiC/SiO_2 interface states observed by x-ray photolectron spectroscopy measurements under bias"Appl. Phys. Lett.. 86. 96 (2001)
T. Sakurai:“偏压下X射线光电子能谱测量观察到的SiC/SiO_2界面态”Appl。
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- 影响因子:0
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KOBAYASHI Hikaru其他文献
KOBAYASHI Hikaru的其他文献
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{{ truncateString('KOBAYASHI Hikaru', 18)}}的其他基金
Low temperature fabrication of Si02/SiC structure by use of surface nanopores formed by nitric acid oxidation method
利用硝酸氧化法形成的表面纳米孔低温制备SiO2/SiC结构
- 批准号:
20246005 - 财政年份:2008
- 资助金额:
$ 20.85万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Improvement of leakage current characteristics of MOS devices by use of catalytic of platinum
利用铂催化改善MOS器件的漏电流特性
- 批准号:
12450127 - 财政年份:2000
- 资助金额:
$ 20.85万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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19550210 - 财政年份:2007
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利用同步辐射的SiO_2脱附硅表面清洁和表面处理
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