Semiconductor devices by the use of new interfacial reactions and interfacial compounds.

为了改善金属-氧化物-半导体(MOS)二极管的电学特性，我们开发了以下新的半导体工艺：1)通过“氰化物处理”消除Si/SiO_2界面的界面态，2)用化学方法低温形成Si/SiO_2结构，3)用低能量冲击等离子体方法低温形成Si/SiO_2结构。在1)的情况下，通过将Si/SiO_2结构浸入KCN溶液中，氰离子与Si悬挂键的选择性反应消除了界面态。氰化物处理产生的Si-CN键具有4.5eV的高键能，使其在800℃时具有热稳定性和辐照稳定性。结果表明，在KCN溶液中加入冠醚(C&lt；12&gt；H&lt；24&gt；O_6)可以完全防止K~+离子的污染。氰化物TrE-…显著降低了漏电流更多的待遇。在2)的情况下，发现利用铂(PT)层的催化活性，可以在~300℃形成SiO_2层。当在~2 nm SiO_2/Si结构上进行铂处理，包括沉积一层铂，然后在氧中进行~300℃的热处理时，漏电流密度降低到~1/200。铂催化活性产生的O~+离子注入到SiO_2中，导致缺陷钝化，形成均匀的SiO_2层。提出了用高氯酸制作~2 0 0℃硅基和碳化硅基金属氧化物半导体二极管的方法。所制备的MOS二极管即使在没有氢处理的情况下也具有低的界面态密度。在3)的情况下，发展了一种利用低能量冲击法产生的氮等离子体在25~450℃范围内形成氮化硅层的方法。通过使用方法2)(即，铂处理)，发现在氮化硅层中引入的等离子体损伤被消除。较少

We have developed the following new semiconductor processes in order to improve the electrical characteristics of metal-oxide-semiconductor (MOS) diodes : 1) elimination of interface states at Si/SiO_2 interfaces by "cyanide treatment", 2) low temperature formation of Si/SiO_2 structure by the use of chemical methods, and 3) low tempertaure formation of Si/silicon oxynitride structure by the use of the low energy impact plasma method. In the case of 1), it has been found that interface states are eliminated by the selective reaction of cyanide ions with Si dangling bonds by the immersion of the Si/SiO_2 structure in KCN solutions. Si-CN bonds resulted from the cyanide treatment possess a high bond energy of 4.5 eV, leading to the thermal stability at 800℃ and the irradiation stability. It is found that contamination by K^+ ions can be completely prevented by the inclusion of crown-ether (C_<12>H_<24>O_6) in the KCN solutions. The leakage current is markedly decreased by the cyanide tre … More atment. In the case of 2), it is found that SiO_2 layers can be formed at 〜300 ℃ by the use of the catalytic activity of a platinum (Pt) layer. When the Pt treatment which involves the deposition of a Pt layer followed by the heat treatment at 〜300 ℃ in oxygen is performed on 〜2 nm SiO_2/Si structure, the density of the leakage current is decreased to 〜1/200. O^- ions produced by the catalytic activity of Pt are injected to SiO_2, leading to the passivation of defects and the formation of uniform SiO_2 layers. Methods of the fabrication of Si and SiC-based MOS diodes at 〜200 ℃ are developed by the use of perchloric acid. The fabricated MOS diodes possess low interface state densities even without hydrogen treatment. In the case of 3), a method of the formation of silicon oxynitride layers at 25〜450 ℃ is developed by the use of nitrogen plasma generated by the low energy impact method. Plasma damages introduced in the silicon oxynitride layers are found to be eliminated by the use of method 2) (i.e. Pt treatment). Less