Low temperature fabrication of Si02/SiC structure by use of surface nanopores formed by nitric acid oxidation method

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We have developed a method of low temperature formation by use of nitric acid oxidation method. 3C-SiC surfaces can be atomically flattened by hydrogen treatment at 400℃, and SiO_2/SiC structure with good electrical characteristics can be formed by two-step nitric acid oxidation method using 40 and 68wt% HNO_3 solutions below 120℃. The leakage current density flowing through SiO_2 is high with no hydrogen treatment, but it can be decreased by approximately six orders of magnitude using the hydrogen treatment. We have also fabricated SiO_2/4H-SiC structure by use of nitric acid vapor oxidation method at 600℃. The oxidation proceeds only from step edges, and the initial oxidation rate for C-face is 2.8 times higher than that for Si-face. For the Si-face, SiOC species is formed at the interface, while it is not present for the C-face.