Low temperature fabrication of Si02/SiC structure by use of surface nanopores formed by nitric acid oxidation method

利用硝酸氧化法形成的表面纳米孔低温制备SiO2/SiC结构

• 批准号: 20246005
• 负责人: KOBAYASHI Hikaru
• 金额: $ 32.03万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-20246005/
• 关键词: SiC; SiO2; 低温酸化; MOS; 硝酸酸化; リーク電流; 水素処理; 界面準位; MOS構造; SiO_2; 酸素原子; 硝酸; SiOC; 界面反応; ナノ細孔; 欠陥制御; 界面制御; 二酸化シリコン膜; 電流-電圧特性; 電気容量-電圧特性; 電気特性

We have developed a method of low temperature formation by use of nitric acid oxidation method. 3C-SiC surfaces can be atomically flattened by hydrogen treatment at 400℃, and SiO_2/SiC structure with good electrical characteristics can be formed by two-step nitric acid oxidation method using 40 and 68wt% HNO_3 solutions below 120℃. The leakage current density flowing through SiO_2 is high with no hydrogen treatment, but it can be decreased by approximately six orders of magnitude using the hydrogen treatment. We have also fabricated SiO_2/4H-SiC structure by use of nitric acid vapor oxidation method at 600℃. The oxidation proceeds only from step edges, and the initial oxidation rate for C-face is 2.8 times higher than that for Si-face. For the Si-face, SiOC species is formed at the interface, while it is not present for the C-face.

本文提出了一种硝酸氧化法低温成型的方法。在400℃下氢处理可使3C-SiC表面原子级平坦化，在120℃以下用40和68wt%HNO_3溶液两步硝酸氧化法可形成具有良好电学特性的SiO_2/SiC结构。未经氢处理的SiO_2漏电流密度很高，而经氢处理后的SiO_2漏电流密度可降低约6个数量级。我们还用硝酸气相氧化法在600℃制备了SiO_2/4 H-SiC结构。氧化仅从台阶边缘进行，并且C面的初始氧化速率比Si面的初始氧化速率高2.8倍。对于Si面，SiOC物种在界面处形成，而对于C面则不存在。

项目成果

Nitric acid method for fabrication of gate oxides in TFT

• DOI: 10.1016/j.apsusc.2007.10.103
• 发表时间: 2008-04
• 期刊: Applied Surface Science
• 影响因子: 6.7
• 作者: S. Mizushima;S. Imai;Asuha;Masato Tanaka;H. Kobayashi

Defect Passivation Etch-less Cleaning for Semiconductor Devices : Zero Emission Process

半导体器件的缺陷钝化无蚀刻清洗：零排放工艺

• 发表时间: 2009
• 作者: A.Miura;R.Tsukamoto;S.Yoshii;I.Yamashita;Y.Uraoka;T.Fuyuki;上野信雄;大藤弘明，竹内洋貴;佐藤大・山村正樹・鍋島達弥;小林光
• 通讯作者: 小林光

Nitric Acid Oxidation Method to Form SiO_2/3C-SiC Structure at 120℃

120℃硝酸氧化法形成SiO_2/3C-SiC结构

• 发表时间: 2008
• 期刊: Appl.Surf.Sci. 254
• 作者: S.-S. Im;S. Terakawa;H. Iwasa;H. Kobayashi
• 通讯作者: H. Kobayashi

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Low temperature nitric acid oxidation of Si (NAOS) for fabrication of gate oxides in LSI and TFT

用于 LSI 和 TFT 栅极氧化物制造的 Si 低温硝酸氧化 (NAOS)

• 发表时间: 2008
• 作者: 山本佑樹;山野井慶徳;西原寛;米澤徹;蓑田愛;前川俊輔;大島伸司;小堀良浩;H. Kontani;小林光
• 通讯作者: 小林光