Investigation of Compositional Inhomogeneity in InAlGaN and Realization of Lattice-Matched Quantum Structure by Group-III Nitrides

InAlGaN 成分不均匀性研究及 III 族氮化物晶格匹配量子结构的实现

• 批准号: 11650013
• 负责人: WAKAHARA Akihiro
• 金额: $ 2.3万
• 依托单位: Toyohashi University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650013/
• 关键词: Group-III Nitride Alloy; Organometallic Vapor Phase Epitaxy; Compositional Inhomogeneity; 組成不均一; リモートプラズマ; 有機金属気相エピタキシー

In order to clarify the compositional inhomogeneity in InAlGaN alloy semiconductor, AlInN layers with various In composition have been grown on GaN epilayer on (0001) oriented sapphire substrate. The composition inhomogeneity was investigated by x-ray diffraction, optical absorption, photoconductivity, and cathodoluminescence measurements. Obtained results are summarized as follows,1) In solid composition is proportional to the TMIn vapor composition for relatively low In composition, but seems to saturate when the In composition exceeds 0.2.2) XRD measurements show that the both the linewidth of (0002) and (30-30) diffractions become wider when the In composition exceeds 0.2, and the diffraction peak indicates large tail in low diffraction side meaning the large dispersion of In composition in the AlInN layer.3) From the photoconductivity measurement, two additional structures are observed at 3.3eV and 3.6eV, suggesting that the layer composed of the at least two kinds of domains with different In composition.4) From the CL measurements, there are two major luminescence peaks from AlInN layers are observed at 3.0eV and 3.8eV and dependent on the In composition.

为了阐明InAlGaN合金半导体中的成分不均匀性，在（0001）取向的蓝宝石衬底GaN外延层上生长了不同In成分的AlInN层。通过X射线衍射、光吸收、光电导和阴极发光测量研究了组成的不均匀性。结果表明：（1）In的固体成分与TMIn的蒸气成分成正比，但当In的组分超过0.2时，固体成分趋于饱和;（2）XRD测量表明，当In的组分超过0.2时，（0002）和（30-30）衍射线的线宽都变宽，并且衍射峰在低衍射侧显示大的拖尾，这意味着AlInN层中In组分的大的分散。3）从光电导测量中，在3.3eV和3.6eV处观察到两个额外的结构，这表明该层由具有不同In组分的至少两种畴组成。4）从CL测量中，观察到来自AlInN层的两个主要发光峰在3.0eV和3.8eV处，并且取决于In组分。

项目成果

A. Wakahara, H. Saiki, J. Genba, and A. Yoshida: "Low-temperature growth of GaN by remote-plasma enhanced organometallic vapor phase epitaxy"10th Int. Conf. on Metalorganic Vapor Phase Epitaxy (June 5-9, Sapporo, 2000) P1-37. Workbook of the 10th Int. Con

A. Wakahara、H. Saiki、J. Genba 和 A. Yoshida：“通过远程等离子体增强有机金属气相外延实现 GaN 的低温生长”10th Int。

S.I. Kim, M. Nakajima, A. Wakahara, and A. Yoshida: "Optical Properties of AlInN Ternary Alloys on GaN Grown by Matelorganic Vapor Phase Epitaxy"20th Electronic Materials Symposium (June 20-22, Nara, 2001) C12, Extended Abstract of the 20th Electronic Mat

S.I. Kim、M. Nakajima、A. Wakahara 和 A. Yoshida：“AlInN 三元合金在 GaN 上通过有机气相外延生长的光学特性”第 20 届电子材料研讨会（奈良，2001 年 6 月 20 日至 22 日）C12，扩展摘要

A.Wakahara,H.Saiki,J.Genba,and A.Yoshida: "Low-temperature growth of GaN by remote-plasma enhanced organometallic vapor phase epitaxy"J.Crystal Growth. 221. 305-310 (2000)

A.Wakahara、H.Saiki、J.Genba 和 A.Yoshida：“通过远程等离子体增强有机金属气相外延实现 GaN 的低温生长”J.Crystal Growth。

S.I.Kim, M.Nakajima, A.Wakahara, A.Yoshida: "Optical Properties of AlInN Ternary Alloys on GaN Grown by Matelorganic Vapor Phase Epitaxy"Extended Abstract of the 20th Electronic Materials Symposium. 67-68 (2001)

S.I.Kim、M.Nakajima、A.Wakahara、A.Yoshida：“有机材料气相外延生长的 GaN 上 AlInN 三元合金的光学性质”第 20 届电子材料研讨会的扩展摘要。

A.Wakahara, K.Pak, A.Yoshida, A.Sasaki, S.Harada, S.Sakai: "Growth Temperature and Luminescence Properties of Al_<1-x>In_x(x〜0.1)"Extended Abstract of the 19th Electronic Materials Symposium. 187-189 (2000)

A.Wakahara、K.Pak、A.Yoshida、A.Sasaki、S.Harada、S.Sakai：“Al_<1-x>In_x(x〜0.1)的生长温度和发光特性”第19届电子杂志扩展摘要材料研讨会。187-189（2000）