Development of Optoelectronic Integrated Devices based on BIN-RE alloy semiconductor and Si

基于BIN-RE合金半导体和Si的光电集成器件的研制

基本信息

  • 批准号:
    17360160
  • 负责人:
  • 金额:
    $ 10.28万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2005
  • 资助国家:
    日本
  • 起止时间:
    2005 至 2007
  • 项目状态:
    已结题

项目摘要

In this work, we investigate optical properties of rare-earth contained group-III nitride alloy, called III-N-RE alloy, to clarify its potential for an active layer in a monolithic optoelectronic integrated circuits(OEICs) which is composed of Si/III-N-RE/Si wafer. Eu and./or Tb were chosen in the present work, because of intra 4f transition in these rare-earth elements can emit visible lighe which is suitable for Si-based high sensitive photodetectors.1) High quality GaN layer, of which x-ray rocking curve linewidth is as narrow as 500aresec, was obtained by using y-Al_2O_3/Si(111) substrate2) Energy transfer/back-transfer processes from host to rare-earth elements were investigated by means of time-resolved photoluminescence spectroscopy and the model in which energy back-transfer and energy loss via non-radiative recombination centers are incorporated, was proposed3) Optical modal gain of A1GaNEu with Eu concentration of -'1% was as high as 100 cm-1, which is suitable for application of one-chip optical amplifier. Energy transfer efficiency of more than 30% was realized in A1GaNEu with Al composition of〜0.3, even at room temperature.4) Double heterojunction structure of AIGaN.GaEuN/AIGaN was fabricated by using rf-MBE.5) Room temperature operation of electroluminescent device composed of AIGaNEu active region was achieved.6) Si/GaN/Si structure can be obtained by using direct wafer bonding technique with AIN interlayer to avoid melt-back etching due to Ga during the bonding process. However, the GaN layer was degraded by this bonding process and thus, further development concerning the bonding process is necessary.According to these results, optoelectronic integrated devices will be realized in future
在这项工作中,我们研究了含稀土族iii氮化物合金(称为III-N-RE合金)的光学性质,以阐明其在由Si/III-N-RE/Si晶片组成的单片光电集成电路(OEICs)有源层中的潜力。欧盟和。由于这些稀土元素在4f内跃迁,可以发出可见光,适合用于硅基高灵敏度光电探测器。1)利用y-Al_2O_3/Si(111)衬底获得了x射线摇摆曲线宽度窄至500aresec的高质量GaN层。2)利用时间分辨光致发光光谱研究了从基体到稀土元素的能量转移/回转移过程,并考虑了能量回转移和非辐射复合中心的能量损失模型。3)当Eu浓度为- 1%时,A1GaNEu的光模态增益高达100 cm-1,适合应用于单片光放大器。在Al成分为~ 0.3的A1GaNEu中,即使在室温下也能实现30%以上的能量传递效率。4) AIGaN的双异质结结构。采用rf-MBE制备GaEuN/AIGaN。5)实现了AIGaNEu有源区组成的电致发光器件的室温工作。6)采用AIN中间层直接晶圆键合技术可获得Si/GaN/Si结构,避免了在键合过程中由于Ga造成的熔背腐蚀。然而,这种键合过程会导致氮化镓层的降解,因此,进一步研究这种键合过程是必要的。根据这些结果,光电集成器件将在未来实现

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
380 keV proton irradiation effects on photoluminescence of Eu-doped GaN
Photoluminescence studies of Eu-implanted GaN epilayers
Eu 注入 GaN 外延层的光致发光研究
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    V. Katchkanov;K. P. O'Donnell;S. Dalmasso;R. W. Martin;A. Braud;Y. Nakanishi;A. Wakahara;A. Yoshida
  • 通讯作者:
    A. Yoshida
Optical Properties of AIGaN doped with Rare-Earth Impurity for CMOS Compatible Optoelectronic Integration
用于CMOS兼容光电集成的掺杂稀土杂质的AlGaN的光学特性
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    A. Wakahara;H. Okada;J.-H. Park;F. Oikawa;A. Yoshida
  • 通讯作者:
    A. Yoshida
Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurements
通过时间分辨光致发光测量研究 III 族氮化物中与 Tb 相关的绿光发射
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    A. Wakahara;K. Takemoto;F. Oikawa;H. Okada;T. Ohshima;H. Itoh
  • 通讯作者:
    H. Itoh
Optical Gain of Eu^<3+> Ion Implanted AlGaN and Its Al Compositional Dependence
Eu^<3>离子注入AlGaN的光学增益及其Al成分依赖性
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    A. Wakahara;T. Shimojo;H. Kawai;H. Okada;T. Ohshima;S. Sato
  • 通讯作者:
    S. Sato
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WAKAHARA Akihiro其他文献

WAKAHARA Akihiro的其他文献

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{{ truncateString('WAKAHARA Akihiro', 18)}}的其他基金

Development of defect reduction method for a lattice-matched III-V-N / Si laser monolithically integrated on Si-chip
开发单片集成在硅芯片上的晶格匹配 III-V-N / Si 激光器的缺陷减少方法
  • 批准号:
    25286049
  • 财政年份:
    2013
  • 资助金额:
    $ 10.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Investigation of Compositional Inhomogeneity in InAlGaN and Realization of Lattice-Matched Quantum Structure by Group-III Nitrides
InAlGaN 成分不均匀性研究及 III 族氮化物晶格匹配量子结构的实现
  • 批准号:
    11650013
  • 财政年份:
    1999
  • 资助金额:
    $ 10.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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Defect characterisation in III-nitrides materials and devices using multimodal micro-spectroscopy
使用多模态显微光谱法表征 III 族氮化物材料和器件的缺陷
  • 批准号:
    2734720
  • 财政年份:
    2022
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使用III族氮化物量子点开发光控自旋门
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    575333-2022
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    2022
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    Alliance Grants
A study of the activation mechanism of implanted impurities and control of point defect in group III nitrides
III族氮化物注入杂质激活机制及点缺陷控制研究
  • 批准号:
    21H01826
  • 财政年份:
    2021
  • 资助金额:
    $ 10.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms
单片片上电子集成
  • 批准号:
    EP/T012692/1
  • 财政年份:
    2020
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Infrared Quantum Materials Based on Scandium-Containing III-Nitrides
基于含钪III族氮化物的红外量子材料
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Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms
单片片上电子集成
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Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms
单片片上电子集成
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    EP/T01265X/1
  • 财政年份:
    2020
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Selective area growth of cubic group III-Nitrides on nano-patterned 3C-SiC (001) substrates
纳米图案 3C-SiC (001) 衬底上立方 III 族氮化物的选择性区域生长
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    418748882
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通向 III 族氮化物超结器件的道路
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    2016
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    $ 10.28万
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OP: Terahertz Lasers Using Intersubband Transitions in non-polar III-nitrides
OP:在非极性 III 族氮化物中使用子带间跃迁的太赫兹激光器
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  • 财政年份:
    2016
  • 资助金额:
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  • 项目类别:
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