Development of Optoelectronic Integrated Devices based on BIN-RE alloy semiconductor and Si

在这项工作中，我们研究了含稀土族iii氮化物合金（称为III-N-RE合金）的光学性质，以阐明其在由Si/III-N-RE/Si晶片组成的单片光电集成电路（OEICs）有源层中的潜力。欧盟和。由于这些稀土元素在4f内跃迁，可以发出可见光，适合用于硅基高灵敏度光电探测器。1)利用y-Al_2O_3/Si（111）衬底获得了x射线摇摆曲线宽度窄至500aresec的高质量GaN层。2)利用时间分辨光致发光光谱研究了从基体到稀土元素的能量转移/回转移过程，并考虑了能量回转移和非辐射复合中心的能量损失模型。3)当Eu浓度为- 1%时，A1GaNEu的光模态增益高达100 cm-1，适合应用于单片光放大器。在Al成分为~ 0.3的A1GaNEu中，即使在室温下也能实现30%以上的能量传递效率。4) AIGaN的双异质结结构。采用rf-MBE制备GaEuN/AIGaN。5)实现了AIGaNEu有源区组成的电致发光器件的室温工作。6)采用AIN中间层直接晶圆键合技术可获得Si/GaN/Si结构，避免了在键合过程中由于Ga造成的熔背腐蚀。然而，这种键合过程会导致氮化镓层的降解，因此，进一步研究这种键合过程是必要的。根据这些结果，光电集成器件将在未来实现

In this work, we investigate optical properties of rare-earth contained group-III nitride alloy, called III-N-RE alloy, to clarify its potential for an active layer in a monolithic optoelectronic integrated circuits(OEICs) which is composed of Si/III-N-RE/Si wafer. Eu and./or Tb were chosen in the present work, because of intra 4f transition in these rare-earth elements can emit visible lighe which is suitable for Si-based high sensitive photodetectors.1) High quality GaN layer, of which x-ray rocking curve linewidth is as narrow as 500aresec, was obtained by using y-Al_2O_3/Si(111) substrate2) Energy transfer/back-transfer processes from host to rare-earth elements were investigated by means of time-resolved photoluminescence spectroscopy and the model in which energy back-transfer and energy loss via non-radiative recombination centers are incorporated, was proposed3) Optical modal gain of A1GaNEu with Eu concentration of -'1% was as high as 100 cm-1, which is suitable for application of one-chip optical amplifier. Energy transfer efficiency of more than 30% was realized in A1GaNEu with Al composition of〜0.3, even at room temperature.4) Double heterojunction structure of AIGaN.GaEuN/AIGaN was fabricated by using rf-MBE.5) Room temperature operation of electroluminescent device composed of AIGaNEu active region was achieved.6) Si/GaN/Si structure can be obtained by using direct wafer bonding technique with AIN interlayer to avoid melt-back etching due to Ga during the bonding process. However, the GaN layer was degraded by this bonding process and thus, further development concerning the bonding process is necessary.According to these results, optoelectronic integrated devices will be realized in future