Engineering Research Equipment: Organometallic Vapor-Phase Epitaxy Reactor with Ultrahigh-Vacuum Interface and Sample Manipulator

在砷化镓或硅等衬底上研究几种半导体（包括砷化镓和碲化镉）的有机金属气相外延（OMVPE）的设备正在升级。升级包括一个具有超高真空（UHV）接口的OMPVE反应器，以及一个用于现有UHV腔室的新机械手。这将使研究有机金属化合物在OMVPE工艺中实际发现的晶体表面上的表面反应成为可能。改进后的仪器将用于研究II-VI化合物的表面化学、半导体的异质外延和OMVPE反应动力学

Equipment for the study of organometallic vapor-phase epitaxy (OMVPE) of several semiconductors, including gallium arsenide and cadmium telluride, on such substrates as gallium arsenide or silicon, is being upgraded. The upgrade consists of an OMPVE reactor with an ultrahigh-vacuum (UHV) interface, and a new manipulator for the existing UHV chamber. This will enable the study of surface reactions of organometallic compounds on the crystal surfaces actually found in the OMVPE process. The improved apparatus will be used to study surface chemistry of II-VI compounds, heteroepitaxy of semiconductors, and OMVPE reaction kinetics.//