Photoinduced Surface Deposition Phenomenon of Chalcogenide Amorphous Films Containing a large Amount of Silver (Studies of Nucleation and Growth Process)

含大量银的硫族化物非晶薄膜的光诱导表面沉积现象(成核和生长过程的研究)

基本信息

  • 批准号:
    11650012
  • 负责人:
  • 金额:
    $ 1.92万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    1999
  • 资助国家:
    日本
  • 起止时间:
    1999 至 2001
  • 项目状态:
    已结题

项目摘要

The Basic data of the nucleation and growth process were obtained for 2 years from 1999 to 2000. The samples used in this experiment were the bulk glasses in the system of Ag_xAs_<15>S_<40-x> (35≦x≦45) and the films in the system of Ag_x(Ge_<0.3>S_<0.7>)_<100-x> (55≦x≦67). The bulk glass with low Ag concentration shows small amount of segregated Ag but high density Ag particles. In contrast, the bulk glass with high Ag concentration shows large amount of segregated Ag but small density Ag particles with large size. On the other hand, the film samples with low Ag concentration shows small amount of segregated Ag and the samples with large Ag concentration shows large amount of segregated Ag. The number of Ag particles does not depend significantly on the Ag concentration. The Ag concentration affects the size of Ag particles. In fact, the illuminated area is densely covered with Ag deposits for high Ag concentration (x=65〜67), as if a continuous Ag film.The addition of nucleus former wa … More s found to be effective to increase the number of Ag particles. The addition of a small amount of Au metal is highly effective for the Ag-As-S bulk glasses. The implantation of Au^+ ions was also effective for the Ag-As-S bulk glasses. The electron beam irradiation before optical illumination was found to create high density Ag nucleus. In 2001, we have researched difference of the crystal growth mechanism between the bulk glasses and film samples. The crystal growth depends strongly depends on the Ag concentration, irrespective of the bulk glass and film sample.In summary, the following model may be proposed for the nucleation and growth process of Ag particles in the Photoinduced surface deposition phenomenon. Some nucleation site on the sample surface may assist the Ag deposition. In the case of bulk glasses, the number of sits is large for low Ag concentration and decreases with increasing the Ag concentration. This seems to be due to the glass structure. For the film sample, the site may be concerned with both surface roughness and structure of the films, since many Ag particles appear for the film samples with high Ag concentration. Both surface roughness and structure for the films may be large than for the bulk glasses. The addition of Au metal may produce the Au clusters in the glass and film and the Au cluster may act as a nucleation center of the Ag deposition process. The effect of Au cluster is significant for the bulk glass than for the film sample, the number of original site of the bulk glass is much less than the film sample. Less
获得了1999年至2000年两年间成核和生长过程的基本数据。本实验所用样品为Ag_xAs_<15>S_<40-x>(35≤x≤45)体系中的块体玻璃和Ag_x(Ge_<0.3>S_<0.7>)_<100-x>(55≤x≤67)体系中的薄膜。低银浓度的块体玻璃显示出少量的偏析银,但银颗粒密度较高。相比之下,高Ag浓度的块体玻璃显示出大量的偏析Ag,但Ag颗粒密度小、尺寸大。另一方面,具有低Ag浓度的膜样品显示出少量的Ag偏析,而具有高Ag浓度的样品显示出大量的偏析Ag。 Ag 颗粒的数量并不显着依赖于 Ag 浓度。 Ag浓度影响Ag颗粒的大小。事实上,在高Ag浓度(x=65〜67)下,照射区域密集地覆盖着Ag沉积物,就像连续的Ag膜一样。添加成核剂被发现可以有效地增加Ag颗粒的数量。添加少量的 Au 金属对于 Ag-As-S 大块玻璃非常有效。 Au^+ 离子的注入对于 Ag-As-S 块体玻璃也有效。发现光学照射之前的电子束照射会产生高密度的银核。 2001年,我们研究了块状玻璃和薄膜样品之间晶体生长机制的差异。晶体生长强烈依赖于银浓度,与块状玻璃和薄膜样品无关。总之,可以为光诱导表面沉积现象中银颗粒的成核和生长过程提出以下模型。样品表面的一些成核位点可能有助于银沉积。在块状玻璃的情况下,Ag 浓度较低时,位点数量较大,并且随着 Ag 浓度的增加而减少。这似乎是由于玻璃结构造成的。对于薄膜样品,该位点可能与薄膜的表面粗糙度和结构有关,因为对于高Ag浓度的薄膜样品会出现许多Ag颗粒。薄膜的表面粗糙度和结构可能比块状玻璃大。 Au金属的添加可以在玻璃和膜中产生Au簇,并且Au簇可以充当Ag沉积过程的成核中心。 Au簇对大块玻璃的影响比对薄膜样品的影响显着,大块玻璃的原始位点数量远少于薄膜样品。较少的

项目成果

期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Kawaguchi: "Thermodynamic Consideration for Photoinduced Surface Deposition of Ag-As-S Glasses"Japanese Journal Applied Physics. 40. 567-568 (2001)
T.Kawaguchi:“Ag-As-S 玻璃光诱导表面沉积的热力学考虑”日本应用物理学杂志。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
T.Kawaguchi: "Thermodynamic Consideration for Photoinduaed Sorface Deposition of Ag-As-S Glasses"Jpn.J.Appl.phys. 40. 567-568 (2001)
T.Kawaguchi:“Ag-As-S 玻璃的光诱导 Sorface 沉积的热力学考虑”Jpn.J.Appl.phys。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
T.Kawaguchi: "Handbook of Advanced Electronic and Photonic Materials and Devices(ed.by H.S.Nalwa)"Academic Press(Vol.5,Chap.3). 91-117 (2000)
T.Kawaguchi:《先进电子和光子材料与器件手册(H.S.Nalwa 编)》学术出版社(第 5 卷第 3 章)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
T.Kawaguchi: "Handbook of Advanaed Ehectronic and Photonic Materials and Devices (分担執筆)"A cademic Press (ed.by H.S.Nalwa)((分担分)Vol.5 ch.3). 91-117 (2000)
T. Kawaguchi:“Handbook of Advanaed Ehectronic and Photonic Materials and Devices(撰稿人)”学术出版社(H.S.Nalwa 编辑)((撰稿人)Vol.5 ch.3 (2000)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
T.Kawaguchi: "Handbook of Advanced Electronic and Photonic Materials and Devices(ed. by H. S. Nalwa)(Vol.5,Chap.3)"Academic Press. 91-117 (2000)
T.Kawaguchi:《先进电子和光子材料与器件手册(H.S. Nalwa 编)(第 5 卷第 3 章)》学术出版社。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

KAWAGUCHI Takeshi其他文献

KAWAGUCHI Takeshi的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('KAWAGUCHI Takeshi', 18)}}的其他基金

A follow-up study of the utilization of medical care by citizens who were notified of health problems in the health examinations
健康检查中发现健康问题的公民医疗利用情况跟踪研究
  • 批准号:
    09470117
  • 财政年份:
    1997
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study of Photo and Electron-Beam Induced Phenomenons inAmorphous Chalcogenide Semiconductors Containing a large quantity of Ag
含大量Ag的非晶硫族化物半导体中光和电子束诱导现象的研究
  • 批准号:
    61550014
  • 财政年份:
    1986
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

相似海外基金

CAREER: Melting-free Photonic Memory with Layered Chalcogenide Materials
职业:采用层状硫族化物材料的免熔化光子存储器
  • 批准号:
    2338546
  • 财政年份:
    2024
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Continuing Grant
EAGER: IMPRESS-U: Quantum dynamics in novel chalcogenide materials and devices
EAGER:IMPRESS-U:新型硫族化物材料和器件中的量子动力学
  • 批准号:
    2403609
  • 财政年份:
    2024
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Standard Grant
Defining Reaction Paths for Chalcogenide Materials Discovery
定义硫族化物材料发现的反应路径
  • 批准号:
    2305731
  • 财政年份:
    2023
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Standard Grant
CAS: Design and Mechanistic Understanding of Emerging Metal Chalcogenide Electrocatalysts for Selective Two-Electron Oxygen Reduction
CAS:用于选择性双电子氧还原的新兴金属硫属化物电催化剂的设计和机理理解
  • 批准号:
    2247519
  • 财政年份:
    2023
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Continuing Grant
High performance chalcogenide processing addressing grand challenges
高性能硫族化物处理应对巨大挑战
  • 批准号:
    LE230100121
  • 财政年份:
    2023
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Linkage Infrastructure, Equipment and Facilities
Development of chalcogenide based monolithic thermoelectric generators for energy harvesting
用于能量收集的基于硫族化物的单片热电发电机的开发
  • 批准号:
    23K13270
  • 财政年份:
    2023
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Grant-in-Aid for Early-Career Scientists
Environmentally Benign Precise Transformations of Alkenes by Chiral Chalcogenide Catalysts
手性硫属化物催化剂对环境无害的烯烃精确转化
  • 批准号:
    22KJ2498
  • 财政年份:
    2023
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Grant-in-Aid for JSPS Fellows
Development and systematization of highly-oriented layered chalcogenide piezoelectric thin films for batter-less IoT sensors
用于无电池物联网传感器的高度取向层状硫族化物压电薄膜的开发和系统化
  • 批准号:
    22KJ0244
  • 财政年份:
    2023
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Grant-in-Aid for JSPS Fellows
Collaborative Research: Thermochemistry and Chemical Kinetics of Halide-driven Crystal Structure Control of Manganese and Lanthanide Chalcogenide Nanocrystals
合作研究:卤化物驱动的锰和镧系硫族化物纳米晶体晶体结构控制的热化学和化学动力学
  • 批准号:
    2305153
  • 财政年份:
    2023
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Standard Grant
Collaborative Research: Thermochemistry and Chemical Kinetics of Halide-driven crystal Structure Control of Manganese and Lanthanide Chalcogenide Nanocrystals
合作研究:卤化物驱动的锰和镧系硫族化物纳米晶体的晶体结构控制的热化学和化学动力学
  • 批准号:
    2305154
  • 财政年份:
    2023
  • 资助金额:
    $ 1.92万
  • 项目类别:
    Standard Grant
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了