Study of Photo and Electron-Beam Induced Phenomenons inAmorphous Chalcogenide Semiconductors Containing a large quantity of Ag

含大量Ag的非晶硫族化物半导体中光和电子束诱导现象的研究

• 批准号: 61550014
• 负责人: KAWAGUCHI Takeshi
• 金额: $ 0.83万
• 依托单位: Nagoya Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61550014/
• 关键词: Chalcogenide glass; Amorphous semiconductor; Thin film; Optical property; Photodoping; Photo-induced metal surface deposition; 光ブリーチング; カルコゲナイド非晶質半導体; 光ドーピング現象; 可視光透過特性; PSD現象; 造膜速度; 構造変化

Amorphous chalcogenide semiconductors containing a large quantity of Ag showthe following peculiar phenomenons. (1) Deposition of metallic silver particleon the semiconductor by illumination (photo-induced metal surface deposition: PSD). (2) Structural change in the semiconductor caused by electron beam irradiation. (3) Photovoltaic effect. (4) Remarkable temperature dependence of a.c. conduction. These phenomena are closely related to the behaviour of Ag^+ ions in the semiconductor. This project includes two reseaches: (a) the research with the objective to apply it to optical and electron-beam memory devices or high sensitive temperature detector; (b) the structural analysis of the semiconductor by X-ray diffraction and X-ray photo-emission spectroscopy. The following studies were performed. (a-1) The PSD phenomenon was studied using the film of (Ge_<0.3>S_<0.7>)_<100-x>Ag_x + y.Au in composition. The PSD sensitivity, resolving power of image and shape of deposited Ag particle were evaluated from the optical transmission property, SEM image, etc. The relations between these properties and the amount of Au(y) were investigated in detail. (a-2) The electron beam-induced structural change was studied by micro-spectrophotometer, EPMA, X-ray diffraction, etc, using the film mentioned above. A model was proposed for the mechanism of the electron beam-induced structural change. (a-3) The photovoltaic effect of glasses in the system of As-S-Ag and Ge-S-Ag (electrode: Au,Pt,Cr,etc) was studied. (a-4) Frequency-dependent admittance and capasitance of these glasses were studied at room temperature and 77K. (b-1) The structural analyses of the films were carried out on the basis of XPS spectra of Ge, S, Ag lines and X-ray diffraction patterns of the films and thermally-induced crystallines.

含有大量Ag的非晶硫族化物半导体表现出以下特殊现象。 (1)通过照明在半导体上沉积金属银颗粒（光诱导金属表面沉积：PSD）。 (2)电子束照射引起的半导体结构变化。 (3)光伏效应。 (4) 交流电的显着温度依赖性传导。这些现象与半导体中Ag^+离子的行为密切相关。该项目包括两项研究：（a）旨在将其应用于光学和电子束存储器件或高灵敏温度探测器的研究； (b)通过X射线衍射和X射线光发射光谱法对半导体进行结构分析。进行了以下研究。 (a-1)使用组成为(Ge_<0.3>S_<0.7>)_<100-x>Ag_x+y.Au的膜来研究PSD现象。从光透射特性、SEM图像等方面评估了PSD灵敏度、图像分辨率和沉积Ag颗粒的形状。详细研究了这些特性与Au(y)含量之间的关系。 (a-2)使用上述膜，通过显微分光光度计、EPMA、X射线衍射等研究电子束引起的结构变化。提出了电子束引起的结构变化机制的模型。 (a-3)研究了As-S-Ag和Ge-S-Ag体系(电极：Au、Pt、Cr等)中玻璃的光伏效应。 (a-4) 在室温和 77K 下研究了这些玻璃的频率相关导纳和电容。 (b-1)根据Ge、S、Ag线的XPS光谱以及薄膜和热诱导晶体的X射线衍射图对薄膜进行结构分析。

项目成果

川口健: 真空(日本真空協会). 29. 315-322 (1986)

Ken Kawaguchi：真空（日本真空协会）。29. 315-322 (1986)。

Takeshi KAWAGUCHI: "Analysis of Change in Optical Transmission Spectra Resulting from Ag Photodoping in Chalcogenide Film" Japanese Journal of Applied Physics. 26. 15-21 (1987)

Takeshi KAWAGUCHI：“硫族化物薄膜中银光电掺杂导致的光传输光谱变化的分析”日本应用物理学杂志。

Takeshi KAWAGUCHI;Kanji MASUI: Japanese Journal of Applied Physics. 26. 15-21 (1987)

川口武；增井汉字：日本应用物理学杂志。

川口健,佐々道成: 真空(日本真空協会). 29. 315-322 (1986)

Ken Kawaguchi，Michinari Sasa：真空（日本真空协会）。29. 315-322 (1986)。

Takeshi KAWAGUCHI;Shigeo MARUNO;Kanji MASUI: The 6 th International Conference on the Physics of Non-Crystalline Solids(7/6-7/10,1987,Kyoto).

Takeshi KAWAGUCHI;Shigeo MARUNO;Kanji MASUI: 第六届国际非晶固体物理学会议(7/6-7/10,1987,京都)。