权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Preparation and characterization of reactively sputtered conducting Rh oxide thin films

反应溅射导电Rh氧化物薄膜的制备及表征

基本信息

批准号：
11650311
负责人：
ABE Yoshio
金额：
$ 1.73万
依托单位：
Kitami Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

项目摘要

Rh oxide thin films were prepared by reactively sputtering a Rh metal target in Ar and O_2 mixed gas atmosphere. Influences of sputtering parameters and post-deposition annealing on crystal structure, chemical bonding state and electrical properties of the deposited thin films were studied by X-ray diffraction, X-ray photoelectron spectroscopy and four-point probe method.Conducting RhO_2 thin films were deposited at low substrate temperatures below 100℃, low sputtering power and low sputtering gas pressure using pure O_2 gas. The as-deposited RhO_2 thin films were poorly crystallized and resistivity of about 300 μΩcm was obtained. In order to improve the crystallinity of the films and reduce resistivity, the as-deposited RhO_2 thin films were annealed in oxygen atmosphere. It was found that the crystal grain size of the RhO_2 thin films increased and the resistivity decreased with increasing annealing temperature. The minimum resistivity of 80 μΩcm and positive temperature coefficient of resistivity (TCR), which indicate metallic conduction characteristics, were obtained for the RhO_2 thin films after annealing at 600-700℃ for 1 hour. The minimum resistivity obtained in this study is almost the same with that reported for bulk RhO_2. The RhO_2 thin films were stable up to 700℃ and thermally decomposed to Rh_2O_3 above 750℃. The resistivity of the Rh_2O_3 thin films was larger than 1mΩcm and negative TCR was observed, which indicate semiconducting characteristics of Rh_2O_3.Low resistivity conducting oxides of platinum group metals, such as RuO_2 and IrO_2, are considered to be promising material for capacitor electrodes of dynamic random access memory (DRAM) and ferroelectric RAM (FeRAM). RhO_2 is thought to be applicable to the electronic devices because thin films of RhO_2 with low resistivity (80 μΩcm) were prepared.

在Ar和O_2的混合气氛中，用反应溅射法制备了Rh氧化物薄膜。采用X射线衍射、X射线光电子能谱和四探针等方法研究了溅射参数和沉积后退火对薄膜晶体结构、化学键合状态和电学性能的影响，并在低于100℃的低温、低溅射功率和低溅射气压下，以纯O2为溅射气体，制备了导电的RhO 2薄膜。沉积态的RhO_2薄膜结晶较差，电阻率约为300 μΩcm。为了提高薄膜的结晶度和降低电阻率，对沉积态的RhO_2薄膜进行了氧气退火处理。结果表明，随着退火温度的升高，RhO_2薄膜的晶粒尺寸增大，电阻率降低。在600-700℃退火1h后，RhO_2薄膜的电阻率最小为80 μΩcm，电阻温度系数（TCR）为正，具有金属导电特性。本研究中得到的最小电阻率与报道的体相RhO_2的最小电阻率几乎相同。RhO_2薄膜在700℃以下稳定，在750℃以上热分解为Rh_2O_3。Rh_2O_3薄膜的电阻率大于1 m Ωcm，电阻温度系数（TCR）为负值，表明Rh_2O_3具有半导体特性。低电阻率的铂族金属氧化物，如RuO_2和IrO_2，被认为是动态随机存储器（DRAM）和铁电RAM（FeRAM）电容电极的理想材料。RhO_2薄膜具有低电阻率（80 μΩcm），可用于电子器件。