Preparation of electrochemically active hydrate and hydroxide thin films by sputtering
溅射法制备电化学活性水合物和氢氧化物薄膜
基本信息
- 批准号:18560297
- 负责人:
- 金额:$ 1.93万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2006
- 资助国家:日本
- 起止时间:2006 至 2007
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Hydrated Ta_2O_5 is a proton-conducting solid-electrolyte and Ni oxyhydroxide (NiOOH) is an electrochromic (EC) material. Thin films of hydrated Ta_2O_5 and NiOOH were prepared by reactive sputtering, which is one of the most widely used dry processing methods.1) A Ta metal target was reactively sputtered using H_2O as a reactive gas. Substrate temperature was cooled to -20℃ during sputtering to decrease the desorption of H_2O molecules from the films surface. The amount of hydrogen atoms incorporated into the Ta_2O_5 films was estimated by Ratherford Back Scattering (RBS) and Hydrogen Forward Scattering (HFS). It is found that hydrogen content in the Ta_2O_5 films increased with decreasing substrate temperature and a maximum H/Ta atomic ratio of 2.2 was obtained at a substrate temperature of -20℃. The film density was found to decrease with decreasing substrate temperature by X-ray Reflectivity (XRR) measurement. Corresponding to the increase of the hydrogen content and the decrease of film density, the ion-conductivity of the Ta_2O_5 films increased and a maximum ion-conductivity of 4x10^<-8> S/cm was obtained at a substrate temperature of -20℃.2) A Ni metal target was reactively sputtered using O_2+H_2O mixed gas, and the formation of NiOOH thin films was confirmed at H_2O flow ratios above 5% by Fourier Transform Infrared Spectroscopy (FTIR). EC properties of the NiOOH thin films were studied in a KOH aqueous electrolyte and a coloration efficiency of approximately 30 cm^2/C was obtained.3) All-solid-state reflective-type EC devices were fabricated using the hydrated Ta_2O_5 solid-electrolyte and the NiOOH EC layers, and reflectance change of 5:1 was obtained.From these results, it is clarified that hydrate and hydroxide thin films can be prepared by the sputtering method. In the future, we will search for new solid electrolyte materials with high-ion-conductivity and develop high-performance thin-film-electrochemical-devices.
水合Ta_2O_5是一种质子导电固体电解质,羟基氧化镍(NiOOH)是一种电致变色材料。采用反应溅射法制备了水合Ta_2O_5和NiOOH薄膜。1)以H_2O为反应气体,反应溅射Ta金属靶。在溅射过程中将衬底温度冷却到-20℃以减少H_2O分子从薄膜表面的脱附。利用Ratherford背散射(RBS)和氢前向散射(HFS)对Ta_2O_5薄膜中氢原子的掺入量进行了估算。结果表明,随着衬底温度的降低,Ta_2O_5薄膜中的氢含量增加,在衬底温度为-20℃时,H/Ta原子比达到最大值2.2。通过X射线反射率(XRR)测量发现膜密度随着衬底温度的降低而降低。Ta_2O_5薄膜的离子电导率随氢含量的增加而增加,在基片温度为-20 ℃时达到最大值4 × 105 S/cm。2)采用O_2+H_2O混合气体反应溅射Ni金属靶<-8>,傅里叶变换红外光谱(FTIR)分析表明,当水流量比大于5%时,NiOOH薄膜的形成得到了证实。研究了NiOOH薄膜在KOH水溶液电解质中的电致变色性能,着色效率约为30 cm^2/C。3)使用水合Ta_2O_5固体电解质和NiOOH电致变色层制备了全固态反射型电致变色器件,反射率变化为5:1。这些结果表明,可以通过溅射法制备水合物和氢氧化物薄膜。今后,我们将致力于寻找具有高离子电导率的新型固体电解质材料,开发高性能的薄膜电化学器件。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Ion conducting Properties of Hydrogen-Containing Ta_2O_5 Thin Films Prepared by Reactive Sputtering
反应溅射制备含氢Ta_2O_5薄膜的离子导电性能
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:Y. Abe;N. Itadani;M. Kawamura;K. Sasaki;H. Itoh
- 通讯作者:H. Itoh
Nickel Oxyhydroxide Thin Films Prepared by Reactive Sputtering Using O_2+H_2O Mixed Gas
O_2 H_2O混合气体反应溅射制备羟基氧化镍薄膜
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:H. Ueta;Y. Abe;K. Kato;M. Kawamura;K. Sasaki;H. Itoh
- 通讯作者:H. Itoh
水素添加Ta_2O_5スパッタ薄膜のイオン伝導性に及ぼす基板温度の影響
衬底温度对氢化Ta_2O_5溅射薄膜离子电导率的影响
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:滝口康弘;彭〓;阿部良夫;佐々木克孝;川村みどり;伊藤英信;鈴木勉
- 通讯作者:鈴木勉
Effects of substrate temperature on the ion-conducting properties of hydrogen-containing Ta_2O_5 thin films
衬底温度对含氢Ta_2O_5薄膜离子导电性能的影响
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:Y. Takiguchi;F. Peng;Y. Abe;K. Sasaki;M. Kawamura;H. Itoh;T. Suzuki
- 通讯作者:T. Suzuki
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{{ truncateString('ABE Yoshio', 18)}}的其他基金
High-rate sputter deposition technique by controlling surface states of substrate and target independently
独立控制基底和靶材表面状态的高速溅射沉积技术
- 批准号:
19K05090 - 财政年份:2019
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Research on the crisis management of Jewish refugees in Shanghai
上海犹太难民危机管理研究
- 批准号:
17K03135 - 财政年份:2017
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of porous hyroxide thin films for smart windows
用于智能窗户的多孔氢氧化物薄膜的开发
- 批准号:
24550228 - 财政年份:2012
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Research on the life rebuilding of Jewish refugees in Shanghai
上海犹太难民生活重建研究
- 批准号:
24520806 - 财政年份:2012
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Research of the Jewish refugee society in Shanghai by the viewpoint of human security
人类安全视角下的上海犹太难民社会研究
- 批准号:
21520722 - 财政年份:2009
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
A research of the composition and circumstances of the Jewish refugee community in Shanghai
上海犹太难民群体的构成及状况研究
- 批准号:
19520603 - 财政年份:2007
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
A research of the actual conditions of the Jewish refugee society which existed in Shanghai at the time of World War II
二战时期上海犹太难民社会的现实状况研究
- 批准号:
17520476 - 财政年份:2005
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Structure control of sputter deposited noble metal thin films using surfactant
使用表面活性剂溅射沉积贵金属薄膜的结构控制
- 批准号:
15560268 - 财政年份:2003
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Preparation and characterization of reactively sputtered conducting Rh oxide thin films
反应溅射导电Rh氧化物薄膜的制备及表征
- 批准号:
11650311 - 财政年份:1999
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Comparative Studies of gardens represented in Literature and Art
文学艺术园林比较研究
- 批准号:
03301061 - 财政年份:1991
- 资助金额:
$ 1.93万 - 项目类别:
Grant-in-Aid for Co-operative Research (A)














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