A Study of Luminescence Wavelength Control on Room Temperature Luminescent Materials by μm-Region Analysis

购买了多通道光电探测器，以获得电子和X射线激活的原位光致发光(PL)光谱。除了μm区原子比分析外，μm区阴极发光也是适用的。研究结果如下：(1)结合XPS分析研究了Sm、Eu和Gd离子掺杂的CdWO_4单晶的发光光谱。三个PL组分缠绕在一起。在Sm-CdWO_4的阴极发光中，选择性地观察到了2.22 eV处的荧光成分。对其原因进行了解释，认为Sm^&lt；3&gt；离子置换到Cd^&lt；2&gt；，并干扰了CdWO_4晶格，产生了[WO_5]^&lt；4-gt；(2)以SmsOa、GDO和WOS为靶材，采用脉冲激光沉积法制备了Sm离子掺杂的Cd WO_4薄膜。在PLD薄膜上的X射线光致发光中，2.22 eV处的光致发光分量得到了增强，而在单晶上的X射线激活光致发光没有变化。(3)以CaO和WO_3混合氧化物为靶材，采用PLD法制备了CaWO_4薄膜。在薄膜上记录了μm区阴极发光光谱，以确定薄膜的质量。(4)发表了有关硅团簇和二氧化钛的学术论文。这些材料的发光性能正在准备出版中。

Multi-channel photo-detector was purchased to obtain in-situ photo-luminescence ( PL) spectra activated with electron and X-ray. The μm-region cathode-luminescence was applicable in addition to μm-region atomic ratio analysis. Results are (1) Luminescence spectra of Sm, Eu and Gd ion-doped CdWO_4 single crystals were studied in association with XPS analysis. Three PL components were convoluted. The PL component at 2.22 eV was selectively observed in cathode-luminescence on Sm-CdWO_4. The reason is explained such that Sm^<3+> ions are displaced to Cd^<2+> and disturb CdWO_4 lattice to generate [WO_5]^<4-> which is responsible for the PL component. (2) Sm-ion doped CdW0_4 thin films were prepared with pulsed laser deposition using SmsOa, GdO and WOs mixed odide targets. The PL component at 2.22 eV was enhanced in X-ray PL on PLD thin films in spite of no change in X-ray activated PL on single crystals. (3) CaWO_4 thin films were prepared with PLD using CaO and WO_3 mixed oxide targets. On the films μm-region cathode-luminescence spectra were recorded to elucidate film quality. (4) Scientific papers on Si clusters and TiO_2 were published. Luminescence properties oh these materials are under preparation for publication.