Electronic Structures of a Quantum Well of Alloy Semiconductor

合金半导体量子阱的电子结构

• 批准号: 12640314
• 负责人: SHINOZUKA Yuzo
• 金额: $ 1.73万
• 依托单位: Wakayama University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12640314/
• 关键词: alloy semiconductor; superlattice; quantum well; CPA; quantum size effect; nano structure; absorption spectrum; 液晶半導体

We have theoretically studied electyronic and optical properties of a quantum well (QW) in which the well region is constructed from a binary alloy semiconductor A_<1-x>B_x in the coherent potential approximation (CPA). A tight binding model is used for a single particle (electron, hole, Frenkel exciton) in the well composed by a rectangular array of N_xxN_yxN_z sites. The effect of the diagonal randomness is reduced to the coherent potential S(E), which is assumed to be the same for all sites, and is selfconsistently determined with the average Green's function. For a slab (∞, ∞, N_z) and wire (∞, N_y, N_z), the density of states ρ(E) is composed of N_z (or N_yxN_z) subbands, each shows the two (one)-dimensional van-Hove singularity. When x (or 1-x) is small, a B (A) impurity-band always appears at the lower (higher) energy side of the lowest (highest) host-band. As the well width becomes narrower and/or the dimensionality decreases, the boundary for Δ/t decreases which separates the amalgamation type and the persistence type. The results have been published in the Proceeding of MRS 2000 Fall symposium G "GaN and Related Alloys" 639 (2001) and Phys. Stat. Sol. (b), 229.

本文在相干势近似下研究了由二元合金半导体A_ B_x构成的量子阱的电学和光学性质<1-x>。采用紧束缚模型，计算了N_xxN_yxN_z矩形点阵势阱中的单粒子（电子、空穴、Frenkel激子）。对角随机性的影响被简化为相干势S（E），它被假设为对所有站点都是相同的，并且是用平均绿色函数自洽地确定的。对于平板（∞，∞，N_z）和线（∞，N_y，N_z），态密度ρ（E）由N_z（或N_yxN_z）个子带组成，每个子带都具有二维van-Hove奇异性。当x（或1-x）较小时，B（A）杂质带总是出现在最低（最高）主带的较低（较高）能量侧。随着阱宽变窄和/或维数减小，Δ/t的边界减小，这将合并型和持久型分开。该结果已经发表在Proceeding of MRS 2000 Fall symposium G“GaN and Related Alloys”639（2001）和Phys. Stat. Sol. (b)，229。

项目成果

Yuzo Shinozuka, Hirotsugu Kida, and Miyuki Fujibayashi: "Electronic Structures of a Quantum Well of A_<1-x>B_x Alloy Semiconductor in the Coherent Potential Approximation"Phys. Stat. Sol. (b). 229, No. 1. 553-556 (2002)

Yuzo Shinozuka、Hirotsugu Kida 和 Miyuki Fujibayashi：“相干势近似中 A_<1-x>B_x 合金半导体量子阱的电子结构”

Yuzo Shinozuka, Hirotsugu Kida, Miyuki Fujibayashi: "Electronic Structures of a Quantum Well of A_<1-X>B_X Alloy Semiconductor in the Coherent Potential Approximation"Phys.Stat.Sol.(b). 229, No.1. 553-556 (2002)

Yuzo Shinozuka、Hirotsugu Kida、Miyuki Fujibayashi：“相干势近似中 A_<1-X>B_X 合金半导体量子阱的电子结构”Phys.Stat.Sol.(b)。

Yuzo Shinozuka, Hirotsugu Kida, Masanori Watarikawa: "Optical Properties of a Quantum Well of A_<1-x>B_x Alloy Semiconductor in the Coherent Potential Approximation"Proceeding of MRS 2000 Fall symposium G "GaN and Related Alloys". 639. G6.36.1-G6.36.6 (20

Yuzo Shinozuka、Hirotsugu Kida、Masanori Watarikawa：“相干势近似中 A_<1-x>B_x 合金半导体量子阱的光学特性”MRS 2000 秋季研讨会 G“GaN 和相关合金”论文集。

Yuzo Shinozuka, Hirotsugu Kida, Miyuki Fujibayashi: "Electronic Structures of a Quantum Well of A_<1-x>B_x Alloy Semiconductor in the Coherent Potential Approximation"Phys.Stat.Sol.(b). 229,No.1. 553-556 (2002)

Yuzo Shinozuka、Hirotsugu Kida、Miyuki Fujibayashi：“相干势近似中 A_<1-x>B_x 合金半导体量子阱的电子结构”Phys.Stat.Sol.(b)。

Yuzo Shinozuka, Hirotsugu Kida, and Masanori Watarikawa: "Optical Properties of a Quantum Well of A_<1-x>B_x Alloy Semiconductor in the Coherent Potential Approximation"Proceeding of MRS 2000 Fall symposium G "GaN and Related Alloys". 639. G6.36.1-6 (2001

Yuzo Shinozuka、Hirotsugu Kida 和 Masanori Watarikawa：“相干势近似中 A_<1-x>B_x 合金半导体的量子阱的光学性质”MRS 2000 秋季研讨会 G“GaN 和相关合金”论文集。