Study on Creation and Annihilation of electrons and holes in Compound Alloy semiconductors

复合合金半导体中电子和空穴的产生和湮灭的研究

• 批准号: 21560017
• 负责人: SHINOZUKA Yuzo
• 金额: $ 2.91万
• 依托单位: Wakayama University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21560017/
• 关键词: 光物性; 化合物半導体; 混晶; 量子井戸; 発光素子; 半導体レーザー; 欠陥反応; 再結合; 信頼性

We have theoretically studied the electronic states in A1-xA* xB type compound mix crystal with diagonal disorder using an extension of CPA. We found that 1) if the potential energyεB is larger or less than bothεA andεA*, the electronic energy spectrum of the mix crystal shows monotonous change in the composition dependence. On the other hand, 2) ifεB is located betweenεA andεA*, the electronic energy spectrum shows a large band gap bowing and the band gap sometimes becomes zero. We also studied possibility of feedback and inflation mechanism among carrier captures by a deep-level defect and transient induced lattice vibrations using proper configuration coordinate diagrams for many carriers. Treating the lattice motion classically we selfconsistently simulated the time evolution of the interaction mode and a series of athermal captures of electron(s) and hole(s). When both the activation energies E acte and E acth are small, a series of successive athermal captures is enhanced and probable for high carrier densities, however, we found that thepossibility of inflation in the amplitude of the lattice vibration critically depends on the minority capture rate and the relative width of the phonon frequency distribution.

本文利用CPA方法的推广，对对角无序的A_（1-x）A_xB型化合物混晶的电子态进行了理论研究。结果表明：1）当势能εB大于或小于εA和εA* 时，混晶的电子能谱随组成单调变化;另一方面，2）如果εB位于εA和εA* 之间，则电子能谱显示出大的带隙弯曲，并且带隙有时变为零。我们还研究了深能级缺陷俘获载流子和瞬态诱导晶格振动之间的反馈和暴胀机制的可能性，使用适当的配置坐标图的许多载流子。处理经典的晶格运动，我们自洽地模拟的相互作用模式的时间演化和一系列的非热捕获的电子（S）和空穴（S）。当激活能Eacte和Eacth都很小时，一系列连续的非热俘获被增强，并且对于高载流子密度是可能的，然而，我们发现晶格振动振幅的暴胀的可能性关键取决于少数俘获率和声子频率分布的相对宽度。

项目成果

Mechanism of Defect Reactions in Semiconductors in "Reliability and Materials Issues of Optical Devices"(Ed.by O.Ueda and S.Pearton)

“光学器件的可靠性和材料问题”中的半导体缺陷反应机制（O.Ueda 和 S.Pearton 编）

• 发表时间: 2012
• 作者: Takashi Noji;Masao Imaizumi;Tadashi Adachi;Yoji Koike;Y.Shinozuka
• 通讯作者: Y.Shinozuka

Feedback and Inflation Mechanism in Successive Multiphonon Carrier Captures at Deep-level Defects

深层缺陷连续多声子载流子捕获中的反馈和膨胀机制

• 发表时间: 2012
• 期刊: MRS Spring Meeting proceedings
• 作者: K. Suzuki;M. Wakita and Y. Shinozuka
• 通讯作者: M. Wakita and Y. Shinozuka

混晶半導体の電子状態の理論的研究

混晶半导体电子态的理论研究

• 发表时间: 2010
• 作者: 原愛美;篠塚雄三
• 通讯作者: 篠塚雄三

化合物混晶半導体の電子状態の理論

化合物混晶半导体电子态理论

• 发表时间: 2010
• 期刊: 光物性研究会論文集
• 作者: 原愛美;篠塚雄三
• 通讯作者: 篠塚雄三

Mechanisms of Recombination-enhanced Defect Reactions in Semiconductors

半导体中复合增强缺陷反应的机制

• 发表时间: 2010
• 期刊: Mater. Res. Soc. Symp. Proc
• 作者: 馬場正太郎;永井勇太;赤津光洋;小松悟;三本啓輔;根本祐一;金田寛;後藤輝孝;Y.K.Zhou;Y. Shinozuka
• 通讯作者: Y. Shinozuka