Study of the Optical Processes in Nitride Alloy Semiconductors

氮化物合金半导体光学过程的研究

基本信息

  • 批准号:
    18540320
  • 负责人:
  • 金额:
    $ 2.49万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2006
  • 资助国家:
    日本
  • 起止时间:
    2006 至 2007
  • 项目状态:
    已结题

项目摘要

1. The optical absorption spectrum of a binary alloy semiconductor A_<1-x>B_x were studied by coherent potential approximation (CPA) . A tight binding model is used for a Frenkel exciton in the presence of the diagonal and off-diagonal randomness. The effects of the randomness are respectively included as the potential part Σ (E) and the amplitude part Γ(E), which are shown to relate to the coherent locator L (E) by Shiba (Prog. Theor. Phys. 46, 1971, 77) as L(E) = (E-Σ(E)) /Γ(E) . The average Green's function with Σ (E) and Γ (E) , is self-consistently determined. The obtained CPA equations were applied to a 3dim. bulk system with a simple band structure and also to quantum well systems.2. Local atomic configurations of GaInNAsSb alloys has been investigated using extended X-ray absorption fine structure spectroscopy. Due to its small composition of Sb, there was a difficulty in the analysis of the experimental data. Upgrading the background removable technique, the difficulty has been successfully solved. A first trial of a prediction of Raman scattering simulation has been also investigated using ab initio calculations. The results quantatively agree well with the experimental results.3. Luminescence properties of In_xGa_<1-x> multiple quantum wells with [0001], <11-2-2>, <11-20> orientation were studied for the variety of indium composition x and photo excitation intensity. For a sample with relatively large composition x, besides a characteristic red emission from the well structures, an additional emission band appeared remarkably around blue region under intensive excitation with ns-pulses into GaN band-to-band transition. The emission was tentatively attributed to the emission from defects in GaN layer induced by excess photo-carriers. It was also confirmed that both emissions decayed by a few microseconds after pulses, however, no transient ESR signal had been found.
1.用相干势近似方法研究了二元合金半导体A_&lt;1-x&gt;B_x的光学吸收光谱。对于存在对角线和非对角线随机性的Frenkel激子,采用紧束缚模型。这些随机性的影响分别作为位势部分Σ(E)和幅度部分Γ(E)被Shiba(Prog.西奥。太棒了。46,1971,77),如L(E)=(E-Σ(E))/Γ(E)。Σ(E)和Γ(E)的平均格林函数是自洽确定的。将所得到的CPA方程应用于三维空间。具有简单能带结构的大块系统和量子井系统。用扩展X射线吸收精细结构谱研究了GaInNAsSb合金的局域原子组态。由于Sb的组成较小,给实验数据的分析带来了困难。升级了背景可拆卸技术,成功解决了这一难题。还利用从头计算对拉曼散射模拟的预测进行了初步尝试。计算结果与实验结果有较好的一致性。研究了[0001],&lt;11-2-2&gt;,&lt;11-20&gt;取向的In_xGa_&lt;1-x&gt;多量子阱的发光特性。对于成分x相对较大的样品,在ns脉冲到GaN带间跃迁的强激发下,除了势垒结构的特征红光发射外,蓝区附近还显著地出现了一个额外的发射带。初步认为这是由于GaN层中的缺陷由过量的光载流子引起的发射。还证实,这两种发射都在脉冲后几微秒内衰减,然而,没有发现瞬时ESR信号。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Electronic Structures of a Quantum Well of A_1-xB_x Alloy Semiconductor in the Coherent Potential Approximation
A_1-xB_x合金半导体量子阱相干势近似的电子结构
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Yuzo;SHINOZUKA
  • 通讯作者:
    SHINOZUKA
Electronic Structures of a Quantum Well of A_<1-x>B_x Alloy Semiconductor in the Coherent Potential Approximation
A_<1-x>B_x合金半导体量子阱的相干势近似电子结构
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Y. Nisikawa;M. Usuda;A. Oguri;A. Oguri;A.Oguri;A. Oguri;A.Oguri;Yuzo SHINOZUKA
  • 通讯作者:
    Yuzo SHINOZUKA
Electronic Structures of Quantum Well of A_<1-x>B_x Alloy Semiconductor in Coherent Potential Approximation
A_<1-x>B_x合金半导体量子阱的相干势近似电子结构
非対角乱れを伴う混晶半導体の電子状態の理論:光吸収スペクトル
非对角无序混晶半导体中的电子态理论:光学吸收光谱
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Yuzo;SHINOZUKA;Yuzo SHINOZUKA;篠塚雄三
  • 通讯作者:
    篠塚雄三
Theory of electronic structure of alloy semiconductors with off-diagonal randomness: optical absorption spectrum
非对角随机性合金半导体电子结构理论:光吸收光谱
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Yuzo;Shinozuka
  • 通讯作者:
    Shinozuka
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SHINOZUKA Yuzo其他文献

SHINOZUKA Yuzo的其他文献

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{{ truncateString('SHINOZUKA Yuzo', 18)}}的其他基金

Exploration of material instability under illumination
探索光照下材料的不稳定性
  • 批准号:
    26610087
  • 财政年份:
    2014
  • 资助金额:
    $ 2.49万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Study on Creation and Annihilation of electrons and holes in Compound Alloy semiconductors
复合合金半导体中电子和空穴的产生和湮灭的研究
  • 批准号:
    21560017
  • 财政年份:
    2009
  • 资助金额:
    $ 2.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on the Optical Properties of Superlattices formed by Alloy Semiconductors
合金半导体超晶格光学性质的研究
  • 批准号:
    16540288
  • 财政年份:
    2004
  • 资助金额:
    $ 2.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Electronic Structures of a Quantum Well of Alloy Semiconductor
合金半导体量子阱的电子结构
  • 批准号:
    12640314
  • 财政年份:
    2000
  • 资助金额:
    $ 2.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Theoretical Study of Bond-Fluctuation in Amorphous Semiconductors
非晶半导体键涨落的理论研究
  • 批准号:
    10640311
  • 财政年份:
    1998
  • 资助金额:
    $ 2.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Theoretical Study of Novel Structures of Materials by Electronic Excitation and Unified Model
电子激励和统一模型材料新型结构的理论研究
  • 批准号:
    07304067
  • 财政年份:
    1995
  • 资助金额:
    $ 2.49万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)

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