Fundamental Research on Spin-filter with highly Spin-polarized Electrons

高自旋极化电子自旋滤波器的基础研究

• 批准号: 12650328
• 负责人: SAKA Takashi
• 金额: $ 2.05万
• 依托单位: DAIDO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650328/
• 关键词: Spin Polarization; Spin-filter; GaAs; Farromagnetism; Photo-electron; Circular Polarization; スピンフィルター

Development of spin-polarized electron sources : Spin-polarized electron sources with GaAs-GaAsP strained supperlattice were developed. The quantum efficiency of 0.7% as well as the polarizability of 77% has been obtained or the quantum efficiency of 0.3% as well as the polarizability of 80% has been obtained. Another type of sources has been studies with bulk GaAs. In this case electrons are excited by absorbing two photons of circularly polarized laser. By the selection rule, only electrons of a definite spin direction are selectively excited. The initial polarization of the excited electrons was estimated to be 86% from the measurement of the polarization of the luminescence.Development of spin-filter. A ferromagnetic thin film of GdTbFe was deposited on a GaAs substrate by the sputtering method. The film was magnetized perpendicularly to the film. Then, the spin-polarized electrons were excited in the substrate and injected in the film. The photo currents were measured under the condition that the spin direction of the electrons excited is parallel or anti-parallel to the direction of the magnetization. The clear effect of the filter by the ferromagnetic film was observed.

自旋极化电子源的开发：开发了具有GaAs-GaAsP应变超晶格的自旋极化电子源。已经获得0.7％的量子效率和77％的极化率，或者已经获得0.3％的量子效率和80％的极化率。另一种来源是用块状砷化镓进行研究。在这种情况下，电子通过吸收圆偏振激光的两个光子而被激发。根据选择规则，只有具有确定自旋方向的电子才会被选择性地激发。根据发光偏振的测量，估计激发电子的初始偏振率为 86%。自旋滤波器的开发。采用溅射法在 GaAs 衬底上沉积 GdTbFe 铁磁薄膜。将薄膜垂直于薄膜磁化。然后，自旋极化电子在基板中被激发并注入到薄膜中。在激发电子的自旋方向与磁化方向平行或反平行的条件下测量光电流。观察到铁磁膜的滤波器的明显效果。

项目成果

T.Saka,T.Kato, et al.: "Spin-Polarized Electron Sources with GaAs-GaAsP Superlattices for Surface Analyses"Surface Science. 454-456. 1042-1045 (2000)

T.Saka、T.Kato 等人：“用于表面分析的 GaAs-GaAsP 超晶格的自旋极化电子源”表面科学。

T.Nishitani, et al.: "Development of Spin Polarized Electron Photocathodes : GaAs-GaAsP Superlattice and GaAs-AlGaAs Superlattice with DBR"AIP Conf. Proc. 570, 14^<th> International Spin Physics Symposium ; Workshop on Polarized Electron Sources and Polar

T.Nishitani 等人：“自旋极化电子光电阴极的开发：GaAs-GaAsP 超晶格和 GaAs-AlGaAs 超晶格与 DBR”AIP Conf。

E.Torikai, Y.Ikedo, A.Ihori, K.Nagamine, T.Saka, T.Kato: "Interaction of Mu with Spin Current in GaAs/GaAsP/Si"Proc.25^<th> International Conference on Physics of Semiconductors. 775-776 (2001)

E.Torikai、Y.Ikedo、A.Ihori、K.Nagamine、T.Saka、T.Kato：“GaAs/GaAsP/Si 中 Mu 与自旋电流的相互作用”Proc.25^<th> 国际物理学会议

坂貴: "スピン偏極電子線源"日本応用磁気学会誌. 25・1. 11-20 (2001)

Takashi Saka：“自旋极化电子束源”日本应用磁学学会杂志25・1（2001）。

T. Saka. T. Kato, T. Nakanishi, S. Okumi, and H. Horinaka: "Spin Polarized Electron Sources with a Strained GaAs Layer"BULLETIN OF DAIDO INSTITUTE OF TECHNOLOGY. 37. 107-112 (2000)

T·萨卡。