Spin-dependent transmission of highly polarized electrons through ferromagnet/semiconductor interfaces

高极化电子通过铁磁体/半导体界面的自旋相关传输

• 批准号: 15360023
• 负责人: SAKA Takashi
• 金额: $ 7.49万
• 依托单位: Daido Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360023/
• 关键词: spin polarization; spin filter; zincblend structure; ferromagnetic materials; photoelectron; circular polarization; GaAs; 垂直磁化; GaTbFe; 砒化ガリウム

A spin polarized electron beam emitted from a GaAs photocathode was injected into a thin ferromagnetic layer deposited on the GaAs photocathode and the spin-dependence of the transmission through the ferromagnet/semiconductor interface was investigated. Polarized electrons with opposite spin-polarizations were excited by irradiating with circularly polarized photons of opposite polarity. The ferromagnetic film was a 3nm thick layer of GdTbFe, and a thin oxide layer (2nm) was inserted between the film and the photocathode, which resulted in tunneling transmission of the electrons. After deposition, the film was magnetized in the direction perpendicular to the surface. Photo-currents with opposite spin polarizations were measured at room temperature. For electrons with the same polarization as that of the ferromagnetic films, the current was enhanced, while, on the other hand, the current was reduced in the case of the opposite polarization. In the present experiment, a p-GaAs substrate was used as the photocathode, and therefore the polarization of the photoelectrons was estimated as approximately 30〜35%. If a photocathode with a GaAs/GaAsP strained superlattice is used, a much clearer dependence is anticipated because polarization of more than 85% is expected.

将从GaAs光阴极发射的自旋极化电子束注入到沉积在GaAs光阴极上的薄铁磁层中，研究了铁磁/半导体界面传输的自旋特性。用相反极化的圆极化光子辐照激发具有相反自旋极化的极化电子。铁磁性薄膜是一层3 nm厚的GdTbFe层，在薄膜和光电阴极之间插入了一层薄的氧化层(2 Nm)，这导致了电子的隧道传输。沉积后，薄膜沿垂直于表面的方向磁化。在室温下测量了具有相反自旋极化的光电流。极化与铁磁性薄膜相同的电子，电流增大，而极化相反的电子，电流减小。在本实验中，使用p-GaAs衬底作为光阴极，因此估计光电子的极化约为30~35%。如果使用具有GaAs/GaAsP应变超晶格的光电阴极，预计会有更清晰的依赖关系，因为极化预计会超过85%。

项目成果

Magneto current of magnetic tunnel transistors employing various Schottky junctions

采用各种肖特基结的磁隧道晶体管的磁电流

• 发表时间: 2005
• 期刊: J.Magn. & Magn.Mat. 286
• 作者: T.Hirose;Y.Fujiwara;M.Jimbo;T.Kobayashi;S.Shiomi
• 通讯作者: S.Shiomi

スピン偏極電子源

自旋极化电子源

• 发表时间: 2008

Magneto current of magnetic transistors employing various Schottky junctions

采用各种肖特基结的磁性晶体管的磁电流

• 发表时间: 2005
• 期刊: J. Magn. & Magn. Mat. 286
• 作者: T.Hirose;Y.Fujiwara;M.Jimbo;et al.
• 通讯作者: et al.

Magnetoresistance Effect of Co/AIO[x]/NiFe/Au/n-Si Diode Structure

Co/AIO[x]/NiFe/Au/n-Si 二极管结构的磁阻效应

• 发表时间: 2003
• 期刊: Japan. J. Appl. Phys. 42
• 作者: 坂 貴;加藤俊宏;堀中博道 ほか16名;神保睦子 ほか5名
• 通讯作者: 神保睦子 ほか5名

坂 貴, 加藤俊宏, 堀中博道ほか16名: "高い偏極度、量子効率を併せ持つGaAs-GaAsP系歪み超格子フォトカソードの開発"第28回リニアック技術研究会資料. (2003)

Takashi Saka、Toshihiro Kato、Hiromichi Horinaka 等 16 人：“具有高偏振和量子效率的 GaAs-GaAsP 应变超晶格光电阴极的开发”第 28 期直线加速器技术研究组材料（2003 年）。