Characterization of Semiconductor Surfaces by Ultraviolet Photoelectron Yield Spectroscopy in Ambient Air

环境空气中紫外光电子产额光谱表征半导体表面

• 批准号: 13640605
• 负责人: MONJUSHIRO Hideaki
• 金额: $ 2.18万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13640605/
• 关键词: Photoelectron Yield Spectroscopy; Semiconductor; Surface Analysis; Band Structure; Surface level; LB Film

High resolution ultraviolet photoelectron yield (UPY) spectrometer was developed by using a double monochromator and was applied for the characterization of semiconductor surfaces in ambient condition. By the precise measurement of high resolution UPY spectra of various kinds of Si wafers, it was elucidated that both the photoelectron threshold energy and the shape of the photoelectron yield spectra of the doped Si wafers depended on the doping concentration of impurities and also on the facet of the Si wafers. Therefore it was concluded that ultraviolet photoelectron yield spectroscopy was applicable to the characterization of semiconductor surface in air condition. The oxidation of Si wafer surface in air was in situ monitored by UPY technique and the oxidation rate and the process was studied. Continuous growth of the oxide layer in stead of the layer by layer growth of the surface oxide proposed by other workers was observed for Si(111) facet. High resolution UPY technique was also applied for the characterization of the Langmuir layer of Ru complex on the air/water interface and it was elucidated that the surface structure of the complex could be evaluated by the photoelectron threshold energy.

利用双单色器研制了高分辨率紫外光电子产额（UPY）谱仪，并将其应用于半导体表面的常温表征。通过对各种硅片的高分辨UPY谱的精确测量，阐明了掺杂硅片的光电子阈值能量和光电子产额谱的形状不仅与杂质的掺杂浓度有关，而且与硅片的晶面有关。因此，紫外光电子产额谱可用于空气条件下半导体表面的表征。采用UPY技术对硅片表面在空气中的氧化过程进行了原位监测，研究了硅片表面的氧化速率和氧化过程。在Si（111）面观察到氧化层的连续生长，而不是其他工作者提出的表面氧化层的逐层生长。高分辨率UPY技术也被应用于表征的Langmuir层的钌配合物在空气/水界面上，它阐明了该配合物的表面结构可以评估由光电子阈值能量。