Characterization of Semiconductor Surfaces by Ultraviolet Photoelectron Yield Spectroscopy in Ambient Air

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High resolution ultraviolet photoelectron yield (UPY) spectrometer was developed by using a double monochromator and was applied for the characterization of semiconductor surfaces in ambient condition. By the precise measurement of high resolution UPY spectra of various kinds of Si wafers, it was elucidated that both the photoelectron threshold energy and the shape of the photoelectron yield spectra of the doped Si wafers depended on the doping concentration of impurities and also on the facet of the Si wafers. Therefore it was concluded that ultraviolet photoelectron yield spectroscopy was applicable to the characterization of semiconductor surface in air condition. The oxidation of Si wafer surface in air was in situ monitored by UPY technique and the oxidation rate and the process was studied. Continuous growth of the oxide layer in stead of the layer by layer growth of the surface oxide proposed by other workers was observed for Si(111) facet. High resolution UPY technique was also applied for the characterization of the Langmuir layer of Ru complex on the air/water interface and it was elucidated that the surface structure of the complex could be evaluated by the photoelectron threshold energy.