Formation of virtual substrates for strained SiGe heterostructures and its application to high mobility FETs

应变 SiGe 异质结构虚拟衬底的形成及其在高迁移率 FET 中的应用

• 批准号: 13650007
• 负责人: NAKAGAWA Kiyokazu
• 金额: $ 2.05万
• 依托单位: University of Yamanashi
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650007/
• 关键词: SiGe heterostructure; virtual substrate; high mobility; chemical mechanical polishing; ion implantation; strain relaxation; 擬似基; 科学機械研磨法

We have developed a new technique to form fully relaxed SiGe buffer layers, for fabrication of strained SiGe heterostructure devices. This technique has utilized an ion implantation method. Extremely thin (~100nm) SiGe buffer layers with almost full strain relaxation were obtained by Ar ion implantation into Si substrates before SiGe growth. The amount of strain relaxation was found to depend on ion dose and implantation energy, indication that ion-implantation-induced defects play an important role in strain relaxation.

我们开发了一种形成完全松弛SiGe缓冲层的新技术，用于制造应变SiGe异质结构器件。该技术采用了离子注入方法。在SiGe生长之前，通过向Si衬底注入Ar离子获得了极薄（~100nm）且几乎完全应变松弛的SiGe缓冲层。应变松弛量与离子剂量和注入能量有关，表明离子注入缺陷在应变松弛中起重要作用。

项目成果

K.Sawano et al.: "Surface smoothing of SiGe strained-relaxed buffer layer by chemical mechanical polishing"Material Science and Engineering B.. 89巻. 406-409 (2002)

K.Sawano等人：“通过化学机械抛光对SiGe应变松弛缓冲层进行表面平滑”材料科学与工程B..卷89. 406-409 (2002)

T. Irisawa, S. Tokumitsu, T. Hattori, K. Nakagawa, S. Koh, Y. Shiraki: "Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures"Appl. Phys. Lett.. 81. 847-849 (2002)

T. Irisawa、S. Tokumitsu、T. Hattori、K. Nakakawa、S. Koh、Y. Shiraki：“Si0.3Ge0.7/Ge/Si0.3Ge0.7 异质结构中的超高室温空穴霍尔和有效迁移率”

T.Irisawa et al.: "Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/ Si0.3Ge0.7 heterostructures"J.Appl.Phys.. 81. 847-849 (2002)

T.Irisawa 等人：“Si0.3Ge0.7/Ge/ Si0.3Ge0.7 异质结构中的超高室温空穴霍尔和有效迁移率”J.Appl.Phys.. 81. 847-849 (2002)

K. Nakagawa, S. Yamaguchi, N. Sugii, Y. Shiraki: "Reverse temperature dependence of Sb sticking on Si(100) surfaces"Materials Science and Engineering B-Solid State Materials for Advanced Technology. 89. 238-240 (2002)

K. Nakakawa、S. Yamaguchi、N. Sugii、Y. Shiraki：“Sb 粘附在 Si(100) 表面上的反向温度依赖性”材料科学与工程 B-先进技术固态材料。

K.Nakagawa et al.: "Reverse temperature dependence of Sb sticking on Si(100) surfaces"Material Science and Engineering B. 89巻. 238-240 (2002)

K. Nakakawa 等人：“Sb 粘附在 Si(100) 表面上的反向温度依赖性”材料科学与工程 B.卷 89. 238-240 (2002)