Selective and rapid heating method for polycrystallization of amorphous Si using microwave plasma irradiation

微波等离子体辐照非晶硅多晶选择性快速加热方法

• 批准号: 18560007
• 负责人: NAKAGAWA Kiyokazu
• 金额: $ 2.35万
• 依托单位: University of Yamanashi
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560007/
• 关键词: microwave plasma; Polycrystalline Si; thin film transistor; 電界効界トランジスタ; 多結晶シリコン・ゲルマニウム

We have developed a new technique which enables the selective and rapid heating of semiconductor films with the high conductivity and/or high dielectric constant by using microwave plasma irradiation. In order to apply the technique to crystallization of amorphous Si, a metal such as Ni, Pt and PtPd is deposited selectively on amorphous layers, since amorphous Si has neither high conductivity nor high dielectric constant. It will be shown in this present that the temperature ramping rate and attainable highest temperature by plasma irradiation depend on gas species of the atmosphere, gas pressure and metal species.A 100 nm amorphous silicon film was deposited on a quartz substrate by molecular beam deposition method, and a Ni layer was selectively formed on the amorphous film. Then, the sample was put in a vacuum chamber and irradiated in some gas atmosphere by microwave plasma with the frequency of 2.45GH_z and the output electric power of 1kW.The color of the entire Si region of the … More sample was changed from red to yellow by plasma irradiation, which means that the amorphous film changes to crystalline one. The cross-sectional STEM observation shows that the sample is poly-crystallized by plasma irradiation. During irradiation, some region of Ni film evaporated, which implies that the temperature of Ni increased up to at least 1000℃.The temperature of the Si region, which is 1 mm apart from the edge of the nickel layer, increases immediately after the plasma irradiation in the hydrogen ambient. The temperature depends on the pressure, and the highest temperature of 900℃ is achieved at about 150P_a.The highest temperatures of the Si regions are obtained as functions of the pressures of helium, nitrogen and argon in addition to hydrogen. The highest temperatures are at most 400℃ in all pressure regions independently of gas species except hydrogen, which suggests that the unstable and excited hydrogen-related species such as radicals and atoms also participate in the heating process. Less

我们开发了一种新的技术，它可以利用微波等离子体辐射来选择和快速加热具有高电导率和/或高介电常数的半导体薄膜。为了将该技术应用于非晶硅的晶化，由于非晶硅既不具有高的导电性，也不具有很高的介电常数，因此在非晶层上选择性地沉积了一种金属，如镍、铂和PtPd。利用分子束沉积方法在石英衬底上沉积了一层100 nm的非晶硅薄膜，并在非晶薄膜上选择性地形成了镍层。然后将样品放入真空室中，在一定的气体气氛中，用频率为2.45GH_z的微波等离子体进行辐照，输出功率为1kW。…整个硅区的颜色更多的样品经等离子体辐照后由红色变为黄色，即由非晶态薄膜转变为晶态薄膜。横截面扫描电子显微镜观察表明，样品经等离子体辐照后是多晶化的。在辐照过程中，Ni膜的部分区域蒸发，这意味着Ni的温度至少上升到1000℃。在氢气环境中，等离子体辐照后，距镍层边缘1 mm的Si区域的温度立即升高。温度依赖于气压，在150P_A左右达到最高温度900℃。除氢气外，硅区的最高温度还与氦、氮和氩的压力有关。除了氢以外，所有压力区的最高温度都不超过400℃，这表明与氢有关的不稳定和激发的氢物种也参与了加热过程。较少

项目成果

Atmosphere Dependence of Silicon Crystallization by Microwave Annealing

微波退火硅结晶的气氛依赖性

• 发表时间: 2007
• 作者: S. Ashizawa;M. Mitsui;K. Arimoto;J. Yamanaka;K. Nakagawa;T. Arai;T. Takamatsu;K. Sawano;Y. Shiraki
• 通讯作者: Y. Shiraki

マイクロ波加熱による非晶質シリコンの結晶化

微波加热非晶硅结晶

• 发表时间: 2007
• 作者: 芦澤里樹;三井実;堀江忠司;有元圭介;山中淳二;中川清和;荒井哲司;高松利行;澤野憲太郎;白木靖寛第
• 通讯作者: 白木靖寛第

Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe

• DOI: 10.1063/1.2385086
• 发表时间: 2006-11
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Minoru Mitsui;K. Arimoto;J. Yamanaka;K. Nakagawa;K. Sawano;Y. Shiraki

Crystallization of Amorphous Silicon by Micro-wave Annealing

微波退火非晶硅结晶

• 发表时间: 2007
• 作者: S. Ashizawa;M. Mitsui;T. Horie;K. Arimoto;J. Yamanaka;K. Nakagawa;T. Arai;T. Takamatsu;K. Sawano;Y. Shiraki
• 通讯作者: Y. Shiraki

Heating Mechanism of Microwave Plasma Annealing for Crystallization of Amorphous Silicon

非晶硅晶化微波等离子体退火加热机理

• 发表时间: 2007
• 作者: S. Ashizawa;S. Ariizumi;M. Mitsui;K. Arimoto;J. Yamanaka;K. Nakagawa;T. Arai;T. Takamatsu;K. Sawano;Y. Shiraki
• 通讯作者: Y. Shiraki