Development of selective heating method using microwave plasmaexcited species

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We have performed technology development to enable the selectiveand rapid heating of Ge and the transition metals using irradiation of hydrogen atoms formedby microwave excitation. We confirmed polycrystallization of amorphous Ge films depositedon glass substrates by the hydrogen atoms irradiation of around 60 seconds. In the caseof amorphous Si films which were confirmed not to be heated with hydrogen atoms, wedeposited tungsten atoms on parts of the amorphous Si films and performedpolycrystallization of the films by the lateral solid-phase growth. We have fabricatedfield effect transistors on the polycrystalline films and realized effectiveness mobilityof ～40 cm2/Vs.