Research on hetero-structure growth by a supersonic source beams and an atomic layer epitaxy.

超声源束和原子层外延异质结构生长研究。

• 批准号: 14350012
• 负责人: OZEKI Masashi
• 金额: $ 8.26万
• 依托单位: University of Miyazaki
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14350012/
• 关键词: crystal growth; semiconductor; metal junction; epitaxial; atomic layer growth; compound semiconductor; 成長核; 原子層エピタキシー; GaAs; ヘテロ接合; 超音速分子ビーム; 界面; 歪エネルギー; 自動停止機構; Si; 異種材料接合; 原始層成長; GaP; InAs; 自己停止機構; 超音速分子線; エピタキシー

Basic research on the hetero-structure growth was carried out for various materials including semiconductors, insulating materials, and metals. It is important for the growth of a high quality hetero-interface to precisely control the surface migration of the precursors and the nucleus in the first stage of the hetero-growth. It was found that the control of these parameters was difficult for the conventional growth method such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Therefore, a new growth method using "a supersonic source beam method" and "an atomic layer epitaxy" was developed for the precise growth control. This new method made it possible to independently control the surface migration of precursors from other growth parameters such as growth temperature. By using this growth method, we could produce an extremely high density of nuclei (three order higher than the conventional growth) in the first stage of the hetero-growth.We could select the kind of nuclei useful for the hetero-growth and control its density in the first stage of the growth. After this process, we grew the hetero-structures including semiconductor/semiconductor hetero-structures and semiconductor/metal hetero-structures by the atomic layer epitaxy (Pulsed-Jet-Epitaxy). The atomic layer epitaxy enabled us to control the layer-by-layer growth at an atomic level, which was found for growing a high quality hetero-structure. Furthermore, we could control the dislocation and the relaxation of the interface strain by the atomic layer epitaxy. From these basic research, we could grow high quality hetero-structures for various material systems.

对半导体、绝缘材料、金属等多种材料的异质结构生长进行了基础研究。在异质界面生长的第一阶段，准确控制前驱体和晶核的表面迁移对高质量异质界面的生长具有重要意义。研究发现，分子束外延(MBE)或金属-有机化学气相沉积(MOCVD)等常规生长方法很难控制这些参数。为此，发展了一种新的生长方法，即“超音速源束法”和“原子层外延”相结合的生长方法，以实现精确的生长控制。这种新的方法使得可以独立地控制前驱体的表面迁移，而不受生长温度等其他生长参数的影响。利用这种生长方法，我们可以在异质外延生长的第一阶段产生极高密度的晶核(比常规生长高出三个数量级)，我们可以选择对异质生长有用的晶核种类，并在生长的第一阶段控制其密度。经过这一过程，我们通过原子层外延(脉冲喷射外延)生长了包括半导体/半导体异质结构和半导体/金属异质结构在内的异质结构。原子层外延使我们能够在原子水平上控制逐层生长，这被发现是为了生长高质量的异质结构。此外，我们还可以通过原子层外延控制位错和界面应变的松弛。通过这些基础研究，我们可以为各种材料体系生长出高质量的异质结构。

项目成果

Simulation analysis of dynamical properties of Cl_2 on GaAs (001)

GaAs(001)上Cl_2动力学特性的仿真分析

• 发表时间: 2005
• 期刊: physica status solidi (a) 202・4
• 作者: 原口智宏;尾関雅志;M.Ozeki;M.Ozeki
• 通讯作者: M.Ozeki

尾関 雅志: "GaAs(001)表面における塩素分子の動的振舞いの解析"宮崎大学工学部紀要. 32. 99-106 (2003)

Masashi Ozeki：“GaAs(001)表面上氯分子的动态行为分析”宫崎大学工学部通报32. 99-106 (2003)。

尾関雅志: "Dynamical properties of tertiarybutylarsine on GaAs(001) surface"Nuclear Instruments and Methods in Physics Research B. 193・1. 485-489 (2002)

小关正史：“GaAs(001)表面上的叔丁基胂的动力学性质”核物理研究仪器和方法B.193・1（2002年）

Simulation analysis of dynamical properties of Cl2 on GaAs(001)

GaAs(001)上Cl2动力学特性模拟分析

• 发表时间: 2005
• 期刊: phys. stat. sol.(a) 202
• 作者: P.Wang;T.Nakagawa;A.Fukuyama;K.Maeda;Y.Iwasa;M.Ozeki;Y.Akashi;T.Ikari;M.Ozeki;M.Ozeki
• 通讯作者: M.Ozeki

Analysis of dynamical properties of Cl_2 on GaAs(001) by trajectory simulation

轨迹模拟分析GaAs(001)上Cl_2的动力学性质

• 发表时间: 2005
• 期刊: 宮崎大学工学部紀要 34
• 作者: P.Wang;T.Nakagawa;A.Fukuyama;K.Maeda;Y.Iwasa;M.Ozeki;Y.Akashi;T.Ikari;M.Ozeki;M.Ozeki;原口智宏;Y.Shimizu
• 通讯作者: Y.Shimizu