Proposal of huge-charge-controlled field-effect transistor using ferroelectric gate insulator and its application to next-generation integrated circuits

采用铁电栅极绝缘体的大电荷控制场效应晶体管的提出及其在下一代集成电路中的应用

基本信息

项目摘要

The objective of this research project is to realize new switching device using ferroelectric materials which can control huge charge density of 10-50 μC/cm^2. In this work, we used indium-tin-oxide (ITO) as a channel material instead of Si with ferroelectric gate insulator. First, we fabricated and characterized ferroelectric thin films, Pb(Zr,Ti)O_3 (PZT) and (Bi,La)_4Ti_3O_<12> (BLT), and ITO thin films. Next, we fabricated ferroelectric-gate thin film transistors (TFTs) using ITO/PZT and ITO/BLT structures. Drain current - drain voltage characteristics shows normal n-channel transistor operation with clear drain current saturation. In particular, a large on-current of 0.1 mA/μm was obtained for ITO/BLT TFTs with a channel length of 5 μm. This value is as large as the on-current of Si-MOSFET with same channel length. From this on-current, the charge density. used in the fabricated device is as large 20 μC/cm^2, which proved the operation principle proposed in this work. Furthermore, we examined the details of device parameter dependence of the electrical properties. We also demonstrated that the off-current of the device can be drastically reduced by mechanically polishing the surface of the ferroelectric film. The ITIO/BLT structure ferroelectric-gate TFT with an on-current of 10^<-3> A and an off-current of 10^<-11> A (on/off ratio is more than 10^7) was demonstrated. In addition, transparent ferroelectric-gate TFTs were also demonstrated on quartz substrates.
本研究计划的目标是利用铁电材料实现可控制10-50 μC/cm ^2的巨大电荷密度的新型开关器件。在这项工作中,我们使用铟锡氧化物(ITO)作为沟道材料,而不是与铁电栅绝缘体的Si。首先,我们制备了Pb(Zr,Ti)O_3(PZT)和(Bi,La)_4Ti_3O_<12>(BLT)铁电薄膜以及ITO薄膜,并对其进行了表征。接下来,我们使用ITO/PZT和ITO/BLT结构制作了铁电栅薄膜晶体管(TFT)。漏极电流-漏极电压特性显示正常的n沟道晶体管操作,具有明显的漏极电流饱和。特别是沟道长度为5 μm的ITO/BLT TFT,获得了0.1mA/μm的大导通电流。该值与具有相同沟道长度的Si-MOSFET的导通电流一样大。从这个开电流,电荷密度。器件中所用的最大电流密度为20 μC/cm ^2,验证了本文提出的工作原理。此外,我们研究了器件参数依赖的电气性能的细节。我们还证明了通过机械抛光铁电薄膜的表面,可以大大降低器件的截止电流。研制了ITIO/BLT结构铁电栅TFT,其通断电流为10 <-3>^A,<-11>通断比大于10^7。此外,还在石英衬底上展示了透明铁电栅TFT。

项目成果

期刊论文数量(32)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
固体電子装置およびその作製方法
固态电子器件及其制造方法
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS) FETs Using (Sr,Sm)_<0.8>Bi_<2.2>Ta_2O_9 (SSBT) Thin Films
使用 (Sr,Sm)_<0.8>Bi_<2.2>Ta_2O_9 (SSBT) 薄膜表征金属-铁电-金属-绝缘体-半导体 (MFMIS) FET
  • DOI:
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Takaaki Miyasako;Masaru Senoo;Eisuke Tokumitsu;Takaaki Miyasako;Hirokazu SAIKI;Takaaki MIYASAKO;Makoto Nakayama;Hirokazu Saiki
  • 通讯作者:
    Hirokazu Saiki
(Invited), ITO Channel Thin-Film Transistor with Ferroelectric Gate Insulator
(特邀),具有铁电栅绝缘体的ITO沟道薄膜晶体管
Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation using BLT/ITO Structures
使用 BLT/ITO 结构进行非易失性存储器操作的透明铁电栅薄膜晶体管
Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O_3 Films Fabricated Using Low-Pressure Consolidation Process
低压固结工艺制备溶胶-凝胶法铁电Pb(Zr,Ti)O_3薄膜的电学性能
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TOKUMITSU Eisuke其他文献

TOKUMITSU Eisuke的其他文献

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{{ truncateString('TOKUMITSU Eisuke', 18)}}的其他基金

Current control of graphene channel transistors using semiconductor contacts
使用半导体接触的石墨烯沟道晶体管的电流控制
  • 批准号:
    24656204
  • 财政年份:
    2012
  • 资助金额:
    $ 9.6万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Proposal of varialbe-area electrode structure by field effect and its application to variable capacitors
场效应变面积电极结构的提出及其在可变电容器中的应用
  • 批准号:
    24360119
  • 财政年份:
    2012
  • 资助金额:
    $ 9.6万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on lithography-less solution process for nano-devices and its application to nonvolatile memories
纳米器件无光刻溶液工艺研究及其在非易失性存储器中的应用
  • 批准号:
    21360144
  • 财政年份:
    2009
  • 资助金额:
    $ 9.6万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Systematic survey and property control of high-dielectric-constant thin films for gate insulators of next generation MOSFETs
下一代MOSFET栅极绝缘体用高介电常数薄膜的系统研究和性能控制
  • 批准号:
    12450121
  • 财政年份:
    2000
  • 资助金额:
    $ 9.6万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Low-Temperature MOCVD Technology for Ferroelectric Thin Films
铁电薄膜低温MOCVD技术的发展
  • 批准号:
    11555085
  • 财政年份:
    1999
  • 资助金额:
    $ 9.6万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Study on memory characteristics of non-volatile ferroelectric-gate transistors for neural network applications
用于神经网络应用的非易失性铁电栅晶体管的存储特性研究
  • 批准号:
    09450123
  • 财政年份:
    1997
  • 资助金额:
    $ 9.6万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Preparation of ferroelectric BaMgF_4films on GaAs for the control of two-dimensional electron gas
GaAs上铁电BaMgF_4薄膜的制备用于二维电子气控制
  • 批准号:
    07455134
  • 财政年份:
    1995
  • 资助金额:
    $ 9.6万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)

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STTR Phase II: Integrated Gallium Nitride (GaN) Field Effect Transistor (FET)-Based High Density On Board Electric Vehichle (EV) Charger
STTR 第二阶段:基于集成氮化镓 (GaN) 场效应晶体管 (FET) 的高密度车载电动汽车 (EV) 充电器
  • 批准号:
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