Proposal of huge-charge-controlled field-effect transistor using ferroelectric gate insulator and its application to next-generation integrated circuits

采用铁电栅极绝缘体的大电荷控制场效应晶体管的提出及其在下一代集成电路中的应用

• 批准号: 15360157
• 负责人: TOKUMITSU Eisuke
• 金额: $ 9.6万
• 依托单位: Tokyo Institute of Technology (2004-2005)Tohoku University (2003)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360157/
• 关键词: ferroelectric material; field-effect transistor (FET); gate insulator; conductive oxide; on-current; MOSFET; (Bi,La)_4Ti_3O_<12>; 電界効果型トランジスタ(FET); チタンジルコン酸鉛; チタン酸ランタンビスマス(BLT); チタンジルコン酸鉛(PZT)

The objective of this research project is to realize new switching device using ferroelectric materials which can control huge charge density of 10-50 μC/cm^2. In this work, we used indium-tin-oxide (ITO) as a channel material instead of Si with ferroelectric gate insulator. First, we fabricated and characterized ferroelectric thin films, Pb(Zr,Ti)O_3 (PZT) and (Bi,La)_4Ti_3O_<12> (BLT), and ITO thin films. Next, we fabricated ferroelectric-gate thin film transistors (TFTs) using ITO/PZT and ITO/BLT structures. Drain current - drain voltage characteristics shows normal n-channel transistor operation with clear drain current saturation. In particular, a large on-current of 0.1 mA/μm was obtained for ITO/BLT TFTs with a channel length of 5 μm. This value is as large as the on-current of Si-MOSFET with same channel length. From this on-current, the charge density. used in the fabricated device is as large 20 μC/cm^2, which proved the operation principle proposed in this work. Furthermore, we examined the details of device parameter dependence of the electrical properties. We also demonstrated that the off-current of the device can be drastically reduced by mechanically polishing the surface of the ferroelectric film. The ITIO/BLT structure ferroelectric-gate TFT with an on-current of 10^<-3> A and an off-current of 10^<-11> A (on/off ratio is more than 10^7) was demonstrated. In addition, transparent ferroelectric-gate TFTs were also demonstrated on quartz substrates.

本研究计划的目标是利用铁电材料实现可控制10-50 μC/cm ^2的巨大电荷密度的新型开关器件。在这项工作中，我们使用铟锡氧化物（ITO）作为沟道材料，而不是与铁电栅绝缘体的Si。首先，我们制备了Pb（Zr，Ti）O_3（PZT）和（Bi，La）_4Ti_3O_<12>（BLT）铁电薄膜以及ITO薄膜，并对其进行了表征。接下来，我们使用ITO/PZT和ITO/BLT结构制作了铁电栅薄膜晶体管（TFT）。漏极电流-漏极电压特性显示正常的n沟道晶体管操作，具有明显的漏极电流饱和。特别是沟道长度为5 μm的ITO/BLT TFT，获得了0.1mA/μm的大导通电流。该值与具有相同沟道长度的Si-MOSFET的导通电流一样大。从这个开电流，电荷密度。器件中所用的最大电流密度为20 μC/cm ^2，验证了本文提出的工作原理。此外，我们研究了器件参数依赖的电气性能的细节。我们还证明了通过机械抛光铁电薄膜的表面，可以大大降低器件的截止电流。研制了ITIO/BLT结构铁电栅TFT，其通断电流为10 <-3>^A，<-11>通断比大于10^7。此外，还在石英衬底上展示了透明铁电栅TFT。

项目成果

固体電子装置およびその作製方法

固态电子器件及其制造方法

• 发表时间: 2006

Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS) FETs Using (Sr,Sm)_<0.8>Bi_<2.2>Ta_2O_9 (SSBT) Thin Films

使用 (Sr,Sm)_<0.8>Bi_<2.2>Ta_2O_9 (SSBT) 薄膜表征金属-铁电-金属-绝缘体-半导体 (MFMIS) FET

• 发表时间: 2004
• 期刊: Materials Research Society Symp.Proc. Vol.784
• 作者: Takaaki Miyasako;Masaru Senoo;Eisuke Tokumitsu;Takaaki Miyasako;Hirokazu SAIKI;Takaaki MIYASAKO;Makoto Nakayama;Hirokazu Saiki
• 通讯作者: Hirokazu Saiki

(Invited), ITO Channel Thin-Film Transistor with Ferroelectric Gate Insulator

（特邀），具有铁电栅绝缘体的ITO沟道薄膜晶体管

• 发表时间: 2006
• 期刊: ITC'06 International Thin-Film Transistor Conference, Kitakyusyu-City No.62
• 作者: Eisuke Tokumitsu;Etsu Shin;Masaru Senoo;E.Tokumitsu
• 通讯作者: E.Tokumitsu

Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation using BLT/ITO Structures

使用 BLT/ITO 结构进行非易失性存储器操作的透明铁电栅薄膜晶体管

• 发表时间: 2005
• 期刊: 2005 Fall meeting, Materials Research Society, Wisconsin Paper T10.54
• 作者: Eisuke Tokumitsu;Masaru Senoo;Etsu Shin
• 通讯作者: Etsu Shin

Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O_3 Films Fabricated Using Low-Pressure Consolidation Process

低压固结工艺制备溶胶-凝胶法铁电Pb(Zr,Ti)O_3薄膜的电学性能

• 发表时间: 2004
• 期刊: IEICE Transactions on Electronics Vol.E87-C No.10
• 作者: Takaaki Miyasako;Masaru Senoo;Eisuke Tokumitsu
• 通讯作者: Eisuke Tokumitsu