课题基金 / 基金详情

Study on lithography-less solution process for nano-devices and its application to nonvolatile memories

Study on lithography-less solution process for nano-devices and its application to nonvolatile memories
纳米器件无光刻溶液工艺研究及其在非易失性存储器中的应用
批准号：
21360144
负责人：
TOKUMITSU Eisuke
金额：
$11.32万
依托单位：
Japan Advanced Institute of Science and Technology (2011)Tokyo Institute of Technology (2009-2010)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2009
资助国家：
日本
项目状态：
已结题
起止时间：
2009 至 2011
来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360144/
关键词：
電子・電気材料電子デバイス・機器ナノ材料半導体超微細化マイクロ・ナノデバイス

项目摘要

项目成果

TOKUMITSU Eisuke的其他基金

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中文摘要
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英文摘要
In this research project, a novel device fabrication process using liquid sources without conventional lithography techniques has been proposed. It was confirmed that the physical properties of thin films are closely related to thermal properties of source solutions and design concept for source solutions are defined. Next, ferroelectric-gate nonvolatile memory devices have been demonstrated using the proposed total solution process. In addition, the direct patterning of oxide films using solution process has been achieved.
期刊论文(0)
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会议论文
Totally solution-processed feerroelectric-gate thin-film transistor
全溶液加工的铁电栅极薄膜晶体管
DOI： --
发表时间： 2010
期刊： Applied Physics Letters
影响因子： 4
作者： [Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Tron Tue, Eisuke Tokumitsu, and Tatsuya Shimoda]
通讯作者： and Tatsuya Shimoda
Fabrication and Characterization of An-Sn-O series oxide thin film transistors
An-Sn-O系列氧化物薄膜晶体管的制备与表征
DOI： --
发表时间： 2012
期刊：
影响因子： --
作者： [柳島潤, 松井幹彦, Ken-ichi Haga and Eisuke Tokumitsu]
通讯作者： Ken-ichi Haga and Eisuke Tokumitsu
液体プロセスによるIn_2O_3及びIn-Zn-O(IZO)チャネル薄膜トランジスタの形成
液态工艺形成In_2O_3和In-Zn-O（IZO）沟道薄膜晶体管
DOI： --
发表时间： 2011
期刊：
影响因子： --
作者： [高橋泰裕, 徳光永輔]
通讯作者： 徳光永輔
Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer
具有 IGZO 通道和铁电聚合物的柔性非易失性存储器 TFT
DOI： --
发表时间： 2010
期刊：
影响因子： --
作者： [Gwang-Geun Lee, Sung-Min Yoon, Joo-Won Yoon, Yoshihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu]
通讯作者： Eisuke Tokumitsu
共 44 条
    Current control of graphene channel transistors using semiconductor contacts
    Proposal of varialbe-area electrode structure by field effect and its application to variable capacitors
    Proposal of huge-charge-controlled field-effect transistor using ferroelectric gate insulator and its application to next-generation integrated circuits
    Systematic survey and property control of high-dielectric-constant thin films for gate insulators of next generation MOSFETs