Study on lithography-less solution process for nano-devices and its application to nonvolatile memories

纳米器件无光刻溶液工艺研究及其在非易失性存储器中的应用

基本信息

项目摘要

In this research project, a novel device fabrication process using liquid sources without conventional lithography techniques has been proposed. It was confirmed that the physical properties of thin films are closely related to thermal properties of source solutions and design concept for source solutions are defined. Next, ferroelectric-gate nonvolatile memory devices have been demonstrated using the proposed total solution process. In addition, the direct patterning of oxide films using solution process has been achieved.
在本研究项目中,提出了一种利用液体源而非传统光刻技术的新型器件制造工艺。证实了薄膜的物理性质与源溶液的热性质密切相关,并定义了源溶液的设计概念。接下来,铁电门非易失性存储器件已被证明使用所提出的全解决过程。此外,还实现了用溶液法制备氧化膜的直接图像化。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Totally solution-processed feerroelectric-gate thin-film transistor
全溶液加工的铁电栅极薄膜晶体管
  • DOI:
  • 发表时间:
    2010
  • 期刊:
  • 影响因子:
    4
  • 作者:
    Takaaki Miyasako;Bui Nguyen Quoc Trinh;Masatoshi Onoue;Toshihiko Kaneda;Phan Tron Tue;Eisuke Tokumitsu;and Tatsuya Shimoda
  • 通讯作者:
    and Tatsuya Shimoda
Fabrication and Characterization of An-Sn-O series oxide thin film transistors
An-Sn-O系列氧化物薄膜晶体管的制备与表征
  • DOI:
  • 发表时间:
    2012
  • 期刊:
  • 影响因子:
    0
  • 作者:
    柳島潤;松井幹彦;Ken-ichi Haga and Eisuke Tokumitsu
  • 通讯作者:
    Ken-ichi Haga and Eisuke Tokumitsu
液体プロセスによるIn_2O_3及びIn-Zn-O(IZO)チャネル薄膜トランジスタの形成
液态工艺形成In_2O_3和In-Zn-O(IZO)沟道薄膜晶体管
  • DOI:
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    0
  • 作者:
    高橋泰裕;徳光永輔
  • 通讯作者:
    徳光永輔
Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer
具有 IGZO 通道和铁电聚合物的柔性非易失性存储器 TFT
  • DOI:
  • 发表时间:
    2010
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Gwang-Geun Lee;Sung-Min Yoon;Joo-Won Yoon;Yoshihisa Fujisaki;Hiroshi Ishiwara;Eisuke Tokumitsu
  • 通讯作者:
    Eisuke Tokumitsu
Leakage Cuurent property of the PZT films improved by thermal press treatment
热压处理改善PZT薄膜的漏电流特性
  • DOI:
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Joo-Nam Kim;Toshihiko Kaneda;Eisuke Tokumitsu;Tatsuya Shimoda
  • 通讯作者:
    Tatsuya Shimoda
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TOKUMITSU Eisuke其他文献

TOKUMITSU Eisuke的其他文献

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{{ truncateString('TOKUMITSU Eisuke', 18)}}的其他基金

Current control of graphene channel transistors using semiconductor contacts
使用半导体接触的石墨烯沟道晶体管的电流控制
  • 批准号:
    24656204
  • 财政年份:
    2012
  • 资助金额:
    $ 11.32万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Proposal of varialbe-area electrode structure by field effect and its application to variable capacitors
场效应变面积电极结构的提出及其在可变电容器中的应用
  • 批准号:
    24360119
  • 财政年份:
    2012
  • 资助金额:
    $ 11.32万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Proposal of huge-charge-controlled field-effect transistor using ferroelectric gate insulator and its application to next-generation integrated circuits
采用铁电栅极绝缘体的大电荷控制场效应晶体管的提出及其在下一代集成电路中的应用
  • 批准号:
    15360157
  • 财政年份:
    2003
  • 资助金额:
    $ 11.32万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Systematic survey and property control of high-dielectric-constant thin films for gate insulators of next generation MOSFETs
下一代MOSFET栅极绝缘体用高介电常数薄膜的系统研究和性能控制
  • 批准号:
    12450121
  • 财政年份:
    2000
  • 资助金额:
    $ 11.32万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Low-Temperature MOCVD Technology for Ferroelectric Thin Films
铁电薄膜低温MOCVD技术的发展
  • 批准号:
    11555085
  • 财政年份:
    1999
  • 资助金额:
    $ 11.32万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Study on memory characteristics of non-volatile ferroelectric-gate transistors for neural network applications
用于神经网络应用的非易失性铁电栅晶体管的存储特性研究
  • 批准号:
    09450123
  • 财政年份:
    1997
  • 资助金额:
    $ 11.32万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Preparation of ferroelectric BaMgF_4films on GaAs for the control of two-dimensional electron gas
GaAs上铁电BaMgF_4薄膜的制备用于二维电子气控制
  • 批准号:
    07455134
  • 财政年份:
    1995
  • 资助金额:
    $ 11.32万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)

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