Study on lithography-less solution process for nano-devices and its application to nonvolatile memories

纳米器件无光刻溶液工艺研究及其在非易失性存储器中的应用

• 批准号: 21360144
• 负责人: TOKUMITSU Eisuke
• 金额: $ 11.32万
• 依托单位: Japan Advanced Institute of Science and Technology (2011)Tokyo Institute of Technology (2009-2010)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360144/
• 关键词: 電子・電気材料; 電子デバイス・機器; ナノ材料; 半導体超微細化; マイクロ・ナノデバイス

In this research project, a novel device fabrication process using liquid sources without conventional lithography techniques has been proposed. It was confirmed that the physical properties of thin films are closely related to thermal properties of source solutions and design concept for source solutions are defined. Next, ferroelectric-gate nonvolatile memory devices have been demonstrated using the proposed total solution process. In addition, the direct patterning of oxide films using solution process has been achieved.

在本研究项目中，提出了一种利用液体源而非传统光刻技术的新型器件制造工艺。证实了薄膜的物理性质与源溶液的热性质密切相关，并定义了源溶液的设计概念。接下来，铁电门非易失性存储器件已被证明使用所提出的全解决过程。此外，还实现了用溶液法制备氧化膜的直接图像化。

项目成果

Totally solution-processed feerroelectric-gate thin-film transistor

全溶液加工的铁电栅极薄膜晶体管

• 发表时间: 2010
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Takaaki Miyasako;Bui Nguyen Quoc Trinh;Masatoshi Onoue;Toshihiko Kaneda;Phan Tron Tue;Eisuke Tokumitsu;and Tatsuya Shimoda
• 通讯作者: and Tatsuya Shimoda

Fabrication and Characterization of An-Sn-O series oxide thin film transistors

An-Sn-O系列氧化物薄膜晶体管的制备与表征

• 发表时间: 2012
• 作者: 柳島潤;松井幹彦;Ken-ichi Haga and Eisuke Tokumitsu
• 通讯作者: Ken-ichi Haga and Eisuke Tokumitsu

液体プロセスによるIn_2O_3及びIn-Zn-O(IZO)チャネル薄膜トランジスタの形成

液态工艺形成In_2O_3和In-Zn-O（IZO）沟道薄膜晶体管

• 发表时间: 2011
• 作者: 高橋泰裕;徳光永輔
• 通讯作者: 徳光永輔

Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer

具有 IGZO 通道和铁电聚合物的柔性非易失性存储器 TFT

• 发表时间: 2010
• 作者: Gwang-Geun Lee;Sung-Min Yoon;Joo-Won Yoon;Yoshihisa Fujisaki;Hiroshi Ishiwara;Eisuke Tokumitsu
• 通讯作者: Eisuke Tokumitsu

Leakage Cuurent property of the PZT films improved by thermal press treatment

热压处理改善PZT薄膜的漏电流特性

• 发表时间: 2011
• 作者: Joo-Nam Kim;Toshihiko Kaneda;Eisuke Tokumitsu;Tatsuya Shimoda
• 通讯作者: Tatsuya Shimoda