Current control of graphene channel transistors using semiconductor contacts

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Graphene has attracted much interest for next-generation electronics applications due to its extremely high mobility. However, conventional graphene channel transistors with metal source/drain contacts show ambipolar behavior in their transfer characteristics and on/off drain current ratio is usually low because bandgap of graphene is zero. In this research project, it has been demonstrated that unipolar behavior with high on/off ratio of more than 10^3 can be obtained by using SiC semiconductor source/drain contacts. In particular, improvement of interface properties between graphene and SiC is important to obtain high on/off ratio.