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Electronicband modulation and formation of quantum tunneling structures by atomic-layer control of group-IV semiconductors

通过 IV 族半导体的原子层控制电子带调制和量子隧道结构的形成

基本信息

批准号：
16360002
负责人：
SAKURABA Masao
金额：
$ 9.41万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

项目摘要

Purpose of this project is, by atomic-layer control of group-IV semiconductors and introduction of atomic-order heterostructures, investigation of electronic-band modulation and formation of quantum tunneling structures in order to clarify new properties of carrier transport/generation/recombination processes and creation of novel electronic-band modulated semiconductors. Utilizing surface reactions of B_2H_6 and PH_3 on Si,Si_<1-x>Ge_x and Ge surfaces, conditions for atomic-layer formation of B and P were found under suppression of intermixing and islanding at low temperatures. Additionally, it was found that, by using Si_2H_6 as a more reactive reactant gas than SiH_4,P segregation during capping Si layer growth on a P adsorbed Si(100) could be effectively suppressed and many of P atoms were incorporated in a thin film region at the interface with the thickness below 2 nm and the maximum P concentration of 3x10^<21> cm^<-3>(atomic ratio 6%). Moreover, it was also found that such P atomic-layer doped structures showed higher Hall mobility than the conventional uniformly P doped Si. By using ECR plasma CVD without substrate heating, highly strained Ge and Si epitaxial growth on a (100) surface of Si and Ge with atomic-order flatness was achieved, and possibility of highly strained group-IV semiconductor heterostructures was shown (which was difficult to be achieved by conventional thermal CVD processes). In order to achieve higher-performance p-type resonant tunneling diodes, by investigating new conditions for epitaxial growth of high quality Si_<1-x>Ge_x/Si heterostructures, it is concluded that increase of Ge fraction in the heterostructure is quite effective to reach room temperature operation. These results are very useful to create novel electronic-band modulated semiconductors.

本项目的目的是通过对IV族半导体的原子层控制和引入原子级异质结构，研究电子能带调制和量子隧穿结构的形成，以阐明载流子传输/产生/复合过程的新特性，并创造新型电子能带调制半导体。利用B_2H_6和PH_3在Si、Si_<1-x>Ge_x和Ge表面上的表面反应，在抑制混合和孤岛效应的条件下，找到了形成B和P原子层的条件。此外，研究发现，采用Si_2H_6作为反应性比SiH_4更强的反应气体，可以有效地抑制P吸附Si（100）上盖层生长过程中的P偏聚，并使许多P原子进入厚度小于2nm的界面薄膜区域，最大P浓度为3 × 10 ~（-4）<21>cm ~ 2<-3>（原子比6%）。此外，还发现这种P原子层掺杂结构比传统的均匀P掺杂Si显示出更高的霍尔迁移率。通过使用ECR等离子体CVD而不加热衬底，实现了在Si和Ge的（100）表面上具有原子级平坦度的高应变Ge和Si外延生长，并且显示了高应变IV族半导体异质结构的可能性（这是通过常规热CVD工艺难以实现的）。为了获得更高性能的p型共振隧穿二极管，通过研究高质量Si_<1-x>Ge_x/Si异质结外延生长的新条件，得出了增加异质结中Ge含量对达到室温工作是相当有效的结论。这些结果对制备新型电子带调制半导体材料具有重要意义。

项目成果

期刊论文数量（44）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Strain and Conductivity Behavior of Stripe Patterned Si/Si_<1-x>Ge_x/Si(100) Heterostructures

条纹图案Si/Si_<1-x>Ge_x/Si(100)异质结构的应变和电导行为

DOI：
发表时间：
2006
期刊：
Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)
影响因子：
0
作者：
J.Uhm;et al.;H.Shim et al.;K.Sugawara et al.;H.-S.Cho et al.;A.Yamada et al.;J.Murota et al.;J.Uhm et al.
通讯作者：
J.Uhm et al.

Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD

低温超净LPCVD在Si(100)上生长的高Ge分数Si/应变Si_<1-x>Ge_x异质结构空穴谐振隧道二极管的电学特性

DOI：
发表时间：
2006
期刊：
Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)
影响因子：
0
作者：
T.Seo;et al.
通讯作者：
et al.

Fabrication of 0.12-μm pMOSFETs on High Ge Fraction Si/Si_<1-x>Ge_x/Si(100) heterostructure with Ultrashallow Source/Drain Formed using B-Doped SiGe CVD

使用 B 掺杂 SiGe CVD 在高 Ge 分数 Si/Si_<1-x>Ge_x/Si(100) 异质结构上制造具有超浅源极/漏极的 0.12-μm pMOSFET

DOI：
发表时间：
2004
期刊：
Appl.Surf.Sci. Vol.224
影响因子：
0
作者：
D.Lee;S.Takehiro;M.Sakuraba;J.Murota;T.Tsuchiya
通讯作者：
T.Tsuchiya

Carbon doping effect on strain relaxation during Si_<1-x-y>Ge_xC_y epitaxial growth on Si(100) at 500℃,

碳掺杂对500℃ Si(100)上Si_<1-x-y>Ge_xC_y外延生长应变弛豫的影响，

DOI：
发表时间：
2007
期刊：
Semicond.Sci.Technol. Vol.22
影响因子：
0
作者：
H.Kaj;T.Yamada;N.Tsukamoto;F.Horii;J.Uhm et al.;K.Sugawara et al.;H.Nitta et al.
通讯作者：
H.Nitta et al.

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition (Invited Review Paper)

通过化学气相沉积对 IV 族半导体进行原子控制加工（特邀评论论文）

DOI：
发表时间：
2006
期刊：
Jpn. J. Appl. Phys. Vol.45 No.9A
影响因子：
0
作者：
J.Uhm;et al.;H.Shim et al.;K.Sugawara et al.;H.-S.Cho et al.;A.Yamada et al.;J.Murota et al.
通讯作者：
J.Murota et al.