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Fabrication of Resonant Tunneling Diode by Atomic Layer-by-Layer Epitaxial Growth of Si-Ge-C-N System

Si-Ge-C-N体系原子层外延生长制作谐振隧道二极管

基本信息

批准号：
12450001
负责人：
SAKURABA Masao
金额：
$ 8.19万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450001/
关键词：
Si Ge C N atomic layer resonant tunneling diode heterostructure CVD テヘロ構造

项目摘要

In the present work, in order to create an atomically controlled materials with a novel properties, atomic-layer formation of N and C on Si(100) and Ge(100), subsequent Si epitaxial growth on the N/Si(100) or C/Ge(100), and fabrication of an atomically controlled resonant-tunneling diode of Si-Ge-C-N system have been investigated. In a low-temparature atomic-order surface reaction of SiH_3CH_3 on Ge(100), it is found that single atomic layers of Si and C are formed self-limitedly, as well as N atomic layer formation on Si(100). The Si epitaxial growth on one tenth atomic layer of C/Ge(100) and a half atomic layer of N/Si(100), Si/have been achieved at the growth temperatures below 500℃. In the Si/N/Si structures, the incorporated N atoms are corfined within about 1nm thickness and the maximum concentration is above 5x10^<21>cm^<-3>. It is found that suppression of Si_3N_4 structure is important to obtain a high quality N atomic-layer doped Si film with high N concentration. It is also found that interdiffusion at Si/SiGe/Si(100) heterostructure during thermal treatment proceeds faster with increase of Ge fraction, although the intermixing at Si/Ge heterointerface is suppressed by the existence of one tenth (7x10^<13>cm^<-2>) of C at the interface. These results are quite important to realize high-quality atomically-controlled heterostructure devices. By using above results, atomic-layer N doping is applied to double Si barriers of SiGe resonant tunneling diode, and measured electrical characteristics show that tunneling current density is obviously suppressed compared to the reference diode without the N doping. From these results, it is suggested that an electronic band structure of Si can be modulated by the N doping, and that the atomic-layer doping technique is effective for control of resonant tunneling characteristics.

本论文主要研究了在Si（100）和Ge（100）上形成N和C原子层，在N/Si（100）或C/Ge（100）上外延生长Si，以及制备Si-Ge-C-N系统原子控制共振隧穿二极管。SiH_3CH_3在Ge（100）表面的低温原子级表面反应中，发现Si和C的单原子层自限性形成，而N原子层自限性形成。在低于500℃的生长温度下，在C/Ge（100）的十分之一原子层和N/Si（100）的半原子层上实现了Si的外延生长。在Si/N/Si结构中，N原子的掺入被限制在约1 nm的厚度范围内，最大浓度超过5 × 10 ~（13）<21>cm ~ 2<-3>。发现抑制Si_3N_4结构对获得高质量的高N浓度的N原子层掺杂Si膜是重要的。热处理过程中，Si/SiGe/Si（100）异质结界面的互扩散随着Ge含量的增加而加快，尽管界面上十分之一（7 × 10 ~（10）cm ~ 2）C的存在抑制了Si/Ge异质结界面的互混合<13><-2>。这些结果对于实现高质量的原子控制异质结器件具有重要意义。利用上述结果，将原子层N掺杂应用到SiGe共振隧穿二极管的双Si势垒中，测量的电学特性表明，与未掺杂N的参考二极管相比，隧穿电流密度得到了明显的抑制。根据这些结果，可以认为Si的电子能带结构可以通过N掺杂进行调制，并且原子层掺杂技术对于控制共振隧穿特性是有效的。