Process development for high-performance highly-strained quantum-heterostructure resonant-tunneling devices of group-IV semiconductors

IV族半导体高性能高应变量子异质结构谐振隧道器件工艺开发

• 批准号: 23360003
• 负责人: SAKURABA Masao
• 金额: $ 13.06万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360003/
• 关键词: エピタキシャル成長; プラズマ; 化学気相成長; IV族半導体; Si; Ge; SiGe混晶; ドーピング; ヘテロ構造; 量子デバイス; 室温動作

By using elctron-cyclotron-resonance plasma chemical vapor deposition, epitaxial growth of highly-strained SiGe alloy and Ge films on Si(100) with smooth surface and heavy B doping into Si and Ge epitaxial films can be realized. Nitrogen atomic-layer doping process and its effects upon hole tunneling characteristics of Si barriers in the strained SiGe/Si(100) hole resonant tunneling diode were also investigated.

采用电子回旋共振等离子体化学气相沉积技术，在表面光滑、B重掺杂的Si（100）衬底上外延生长高应变SiGe合金和Ge薄膜。研究了氮原子层掺杂工艺及其对应变SiGe/Si（100）空穴共振隧穿二极管中Si势垒空穴隧穿特性的影响。

项目成果

Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing

通过低能等离子体 CVD 处理进行 IV 族半导体量子异质集成

• DOI: 10.1149/05809.0195ecst
• 发表时间: 2013
• 期刊: ECS Trans.
• 作者: 南秀人;中井雅也;深海洋樹;鈴木登代子;大久保政芳;M.Sakuraba and J.Murota
• 通讯作者: M.Sakuraba and J.Murota

Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode

室温谐振隧道二极管应变Si_<1-x>Ge_x/Si量子异质结构的原子控制形成

• DOI: 10.1149/1.3633314
• 发表时间: 2011
• 期刊: ECS Trans.
• 作者: C. Mitsumata;S. Tomita;M. Mizuguchi;and T. Seki;M.Sakuraba and J.Murota
• 通讯作者: M.Sakuraba and J.Murota

Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors

用于 IV 族半导体量子异质集成的原子控制等离子体 CVD 处理

• 发表时间: 2013
• 作者: Akira Emoto *;Naomi Noguchi ;Tomoko Kobayashi ;and Takashi Fukuda;M.Sakuraba and J.Murota
• 通讯作者: M.Sakuraba and J.Murota

Epitaxial Growth of B-Doped Si on Si(100) by Electron-Cyclotron- Resonance Ar Plasma Chemical Vapor Deposition in a SiH_4-B_2H_6-H_2 Gas Mixture without Substrate

无衬底 SiH_4-B_2H_6-H_2 气体混合物中电子回旋共振 Ar 等离子体化学气相沉积在 Si(100) 上外延生长 B 掺杂 Si

• DOI: 10.1016/j.tsf.2013.08.118
• 发表时间: 2014
• 期刊: Thin Solid Films
• 影响因子: 2.1
• 作者: Y.Abe;M.Sakuraba and J.Murota
• 通讯作者: M.Sakuraba and J.Murota

Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors

用于 IV 族半导体量子异质集成的原子控制等离子体处理

• DOI: 10.1149/1.3633311
• 发表时间: 2011
• 期刊: ECS Trans.
• 作者: L. Chen;F. Matsukura;and H. Ohno;M.Sakuraba and J.Murota
• 通讯作者: M.Sakuraba and J.Murota