Development of self-assembly method using optical near-field with nano-scale controllability in size and position
开发利用光学近场的尺寸和位置可控的纳米级自组装方法
基本信息
- 批准号:16360028
- 负责人:
- 金额:$ 9.6万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2004
- 资助国家:日本
- 起止时间:2004 至 2005
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
A nanoscale waveguide is required as a far/near-field conversion device in advanced nanoscale photonic devices. One possible device, a metallic nanoparticle plasmon waveguide, was proposed and near-field energy transfer was observed along the lithographically patterned metallic nanodot chain. Here, we developed the self-assembly of a size- and position-controlled ultra-long nanodot chain using a novel effect of near-field optical desorption.We fabricated a nanodot chain using radio frequency (RF) sputtering under illumination on glass substrate with a 100-nm wide and 30-nm deep groove. During the deposition of Al, illumination of 2.33-eV light (50 mW) with linear polarization perpendicular to the groove (E_<90>) resulted in the formation of a 99.6-nm-diameter Al nanodot chains with 27.9-nm separation that were as long as 100 μm in a highly size- and position-controlled manner. The deviation of both nanodot size and the separation were as small as 5 nm. To identify the position of the c … More hain, we compared topographic atomic force microscopy (AFM) images of the surface of the glass substrate before and after Al deposition. Comparison of the profiles showed that the nanodot chain was formed around edge. Furthermore, no dot structure was obtained with parallel polarization E_0. Since the near-field intensity with E_<90> was strongly enhanced at the edge of the groove in comparison with E_0 owing to edge enhancement of the electrical field, a strong near-field intensity results in nanodot chain formation. The dot formation at the one-sided edge originates from the asymmetric electric-field intensity distribution, owing to the slanted illumination. This prediction is supported by calculations.Al-dot chain formation was also observed with RF sputtering of Al under illumination of a 2.62-eV light (100 mW) with E_<90>, which resulted in the formation of 84.2-nm nanodot with 48.6-nm separation. Although the period was similar to that fabricated under 2.33-eV illumination, the dot size was reduced in proportion to the increase in the photon energy, indicating that the size- and position-controlled dot-chain formation originates from desorption of the deposited metallic nanoparticles. A metallic dot has a strong optical absorption due to plasmon resonance, which strongly depends on particle size. This can induce desorption of the deposited metallic nanodot when it reaches the resonant diameter. As the deposition of metallic dots proceeds, the growth is governed by a trade-off between deposition and desorption, which determines their size, depending on the photon energy of the incident light.Since the nanodot chain forms at the size based on plasmon resonance, the resulting structure should have high transmission efficiency of optical near-field energy. Furthermore, since our deposition method is based on a photo-desorption reaction, it could be widely used to fabricate size- and position-controlled nanoscale structures with other metals or semiconductors. Less
在先进的纳米光子器件中,需要纳米波导作为远场/近场转换器件。提出了一种可能的器件,金属纳米粒子等离子体激元波导,并观察到近场能量转移沿着光刻图案化的金属纳米点链。在此,我们利用近场光脱附的新效应,在具有100 nm宽、30 nm深凹槽的玻璃基底上,利用射频溅射技术,在光照下制备了尺寸和位置可控的超长纳米点链。在Al的沉积过程中,具有垂直于凹槽(E_)的线性偏振的2.33-eV光(50 mW)的照射<90>导致以高度尺寸和位置控制的方式形成直径为99.6-nm的Al纳米点链,其间距为27.9-nm,长度为100 μm。纳米点的尺寸和分离的偏差都很小,为5 nm。确定c的位置 ...更多信息 海恩,我们比较了Al沉积前后玻璃衬底表面的形貌原子力显微镜(AFM)图像。通过形貌比较发现,纳米点链主要形成在边缘附近。此外,在平行偏振E_0下没有获得点结构。由于<90>电场的边缘增强,与E_0相比,E_0的近场强度在凹槽边缘处强烈增强,因此强的近场强度导致纳米点链的形成。在单侧边缘处的点形成源于由于倾斜照明而导致的不对称电场强度分布。在2.62eV(100 mW)的E_2光照射下,用射频溅射Al,观察到Al点链的形成,<90>形成了间距为48.6nm的84.2nm纳米点。虽然周期是类似于在2.33-eV的照明下制造的,点的大小减少成比例的光子能量的增加,表明的大小和位置控制的点链的形成起源于沉积的金属纳米颗粒的解吸。金属点由于等离子体共振而具有强的光吸收,这强烈地依赖于颗粒尺寸。当沉积的金属纳米点达到共振直径时,这可以引起沉积的金属纳米点的解吸。随着金属点的沉积进行,生长受沉积和脱附之间的权衡支配,这取决于入射光的光子能量来确定它们的尺寸。由于纳米点链以基于等离子体共振的尺寸形成,因此所得到的结构应该具有光学近场能量的高传输效率。此外,由于我们的沉积方法是基于光脱附反应,因此它可以广泛用于用其他金属或半导体制造尺寸和位置受控的纳米级结构。少
项目成果
期刊论文数量(7)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Progress in Nano-Electro-Optics V
纳米电光学进展V
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:M.;Ohtsu;K.;Kobayashi;et. al.
- 通讯作者:et. al.
Observation of size-dependent resonance of near-field coupling between a deposited Zn dot and the probe apex during near-field optical chemical vapor deposition
近场光学化学气相沉积过程中沉积的锌点和探针尖端之间近场耦合的尺寸依赖性共振的观察
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:J.Lim;T.Yatsui;M.Ohtsu
- 通讯作者:M.Ohtsu
Self-assembly of size- and position-controlled ultralong nanodot chains using near-field optical desorption.
- DOI:10.1021/nl051898z
- 发表时间:2005-11
- 期刊:
- 影响因子:10.8
- 作者:T. Yatsui;W. Nomura;M. Ohtsu
- 通讯作者:T. Yatsui;W. Nomura;M. Ohtsu
Nanophotonic device its fabrication - Near-field interaction and fabrication.(In Japanese)
纳米光子器件的制造 - 近场相互作用和制造。(日语)
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:Hajime Nishioka;and Ken-ichi Ueda;Yasuyuki Kimura;木村康之;Daisuke Mizuno;T.Yatsui M.Ohtsu
- 通讯作者:T.Yatsui M.Ohtsu
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OHTSU Motoichi其他文献
OHTSU Motoichi的其他文献
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{{ truncateString('OHTSU Motoichi', 18)}}的其他基金
Electroluminescence and its wavelength control of indirect transition-type semiconductor by dressed-photon-phonons
修饰光子-声子间接跃迁型半导体的电致发光及其波长控制
- 批准号:
24360023 - 财政年份:2012
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Nanophotonic signal processing system based on optical near-field interactions
基于光学近场相互作用的纳米光子信号处理系统
- 批准号:
20246020 - 财政年份:2008
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Ultra-high density optical signal processing using optical near-field interactions
利用光学近场相互作用进行超高密度光信号处理
- 批准号:
18360032 - 财政年份:2006
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Investigation on the mechanism of optical near field energy transfer in a nanophotonic integrated circuit and connection with external circuites
纳米光子集成电路中光近场能量传输机理及与外部电路连接的研究
- 批准号:
14350033 - 财政年份:2002
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of a pyramidal write-read head array for high-density optical storage by optical near field
光近场高密度光存储金字塔读写头阵列的研制
- 批准号:
12555011 - 财政年份:2000
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study on operation of a nano-photonic integrated circuit by optical near field and deposition of semiconductor nano-patterns
光近场操作纳米光子集成电路和半导体纳米图案沉积的研究
- 批准号:
12450029 - 财政年份:2000
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of nanometric photochemical vapor deposition by optical near field
光学近场纳米光化学气相沉积研究进展
- 批准号:
09555096 - 财政年份:1997
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of ultrahigh densiti photon mode optical storage by nearfield optical technology
利用近场光学技术开发超高密度光子模式光存储
- 批准号:
07555012 - 财政年份:1995
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Realization of nanometric optical functional devicesusing evanescentlignt localized in a subwavelendth three dimensional space
利用局域于亚波长三维空间的倏逝光实现纳米光学功能器件
- 批准号:
07455035 - 财政年份:1995
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Near-Field Optics and Its Applications
近场光学及其应用
- 批准号:
07044310 - 财政年份:1995
- 资助金额:
$ 9.6万 - 项目类别:
Grant-in-Aid for International Scientific Research.