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Development of nanometric photochemical vapor deposition by optical near field

Development of nanometric photochemical vapor deposition by optical near field
光学近场纳米光化学气相沉积研究进展
批准号:
09555096
负责人:
OHTSU Motoichi
金额:
$9.09万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998

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中文摘要
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英文摘要
Method of nanometric photochemical vapor deposition (PCVD) was proposed by using optical near field(ONF). Plenucleation technique was also proposed in order to preventing deposition on the fiber probe. Direct deposition was also proposed and tried. First, using a low loss optical fiber in the ultraviolet region, reproducible technique of selective chemical etching was developed to fabricate a fiber probe for ONE generation. For this etching, bufferdHF solution was used. As a result, the transmission loss was reduced to 0.1dB/m. By this fiber probe, the efficiency of generating ONE and the ONF power density were increased to 1 x 10^<-2>, and 1kW/cm^2, respectively, which are sufficiently high for inducing photochemical reaction for PCVD.Installing this probeinto a vacuum chamber filled with Zn(CH_3)_2 molecular gas, experiments were carried out to deposit metallic Zn atoms on a flat glass plate after dissociating Zn(CH_3)_2 molecules by ONE on the top of the fiber probe. The second harm … More onics of an argon laser and excimer laser were used as a light source. Computer softw are for scanning the probe and shear-force detection/control system were developed. As aresult of experimentusing the abovementioned experimental system, deposition of Zn pattern with the width as narrow as 20 nm was confirmed. The number of atomic layers was estimated to be eight. Real width should be narrower than 20 nm because this observed value is limited by the resolution of shear-force microscope. Advantage of thie deposition is that an arbitrary pattem can be deposited by scanning the probe, which can be conveniently used for repairing the photomask of IC.The width of the pattern depend on the probe size, not on the deposition time. The height was proportional to the deposition time. For further development, nano-sizeddots of ZnO was depositedby introducing oxigen gas into the Zn(CH_3)_2 gas. Since ZnO can emit a blue light, kind of deposition of semiconductor dots can open a new field of nanometric photonic integration. Less
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H.Ito, K.Sakaki, W.Jhe, M.Ohtsu: "EVanescent-light induced atom-guidance using a hollow optical fiber with light coupled sideways" Opt.Commun.141. 43-47 (1997)
H.Ito、K.Sakaki、W.Jhe、M.Ohtsu:“使用侧面耦合光的中空光纤进行消逝光诱导原子制导”Opt.Commun.141。
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通讯作者:
V.V.Polonski, Y.Yamamoto, M.Kourogi, H.Fukuda, M.Ohtsu: "Nanometric patterning of zinc by optical near-field photochemical vapour deposition" J.Microscopy. 194・2印刷中. (1999)
V.V.Polonski、Y.Yamamoto、M.Kourogi、H.Fukuda、M.Ohtsu:“通过光学近场光化学气相沉积进行锌的纳米图案化”J.Microscopy 194・2 出版(1999 年)。
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大津元一, 河田 聡: "近接場ナイフォトニクスハンドブック" オプトロニクス社, 270 (1997)
Motoichi Otsu、Satoshi Kawata:《近场光子学手册》Optronics,270 (1997)
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31
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