Development of nanometric photochemical vapor deposition by optical near field

提出了利用光学近场（ONF）技术制备纳米光化学气相沉积（PCVD）的方法。为了防止纤维探针上的沉积，还提出了全核技术。还提出并尝试了直接取证。首先，利用低损耗的紫外区光纤，开发了可重复的选择性化学蚀刻技术来制作一代光纤探针。对于这种蚀刻，使用bufferdHF溶液。传输损耗降低到0.1dB/m。通过该光纤探针，产生ONE的效率和ONF的功率密度分别提高到1 × 10^<-2>和1kW/cm^2，足以诱导PCVD的光化学反应。将该探针置于充满Zn(CH_3)_2分子气体的真空室中，在光纤探针顶部用ONE将Zn(CH_3)_2分子解离，将金属Zn原子沉积在平板玻璃上。第二个危害是使用了更多的氩激光器和准分子激光器的电子学作为光源。开发了探头扫描软件和剪切力检测/控制系统。利用上述实验系统进行了实验，确定了窄至20 nm的Zn图案的沉积。原子层数估计为8层。由于实际宽度受剪切力显微镜分辨率的限制，实际宽度应小于20nm。该方法的优点是可以通过扫描探针沉积任意图案，方便地用于ic光掩膜的修复，图案的宽度取决于探针的尺寸，而不是沉积时间。高度与沉积时间成正比。为了进一步发展，在Zn(CH_3)_2气体中引入氧气，沉积了纳米尺寸的ZnO点。由于ZnO可以发出蓝光，因此半导体点的沉积可以开辟纳米光子集成的新领域。少

Method of nanometric photochemical vapor deposition (PCVD) was proposed by using optical near field(ONF). Plenucleation technique was also proposed in order to preventing deposition on the fiber probe. Direct deposition was also proposed and tried. First, using a low loss optical fiber in the ultraviolet region, reproducible technique of selective chemical etching was developed to fabricate a fiber probe for ONE generation. For this etching, bufferdHF solution was used. As a result, the transmission loss was reduced to 0.1dB/m. By this fiber probe, the efficiency of generating ONE and the ONF power density were increased to 1 x 10^<-2>, and 1kW/cm^2, respectively, which are sufficiently high for inducing photochemical reaction for PCVD.Installing this probeinto a vacuum chamber filled with Zn(CH_3)_2 molecular gas, experiments were carried out to deposit metallic Zn atoms on a flat glass plate after dissociating Zn(CH_3)_2 molecules by ONE on the top of the fiber probe. The second harm … More onics of an argon laser and excimer laser were used as a light source. Computer softw are for scanning the probe and shear-force detection/control system were developed. As aresult of experimentusing the abovementioned experimental system, deposition of Zn pattern with the width as narrow as 20 nm was confirmed. The number of atomic layers was estimated to be eight. Real width should be narrower than 20 nm because this observed value is limited by the resolution of shear-force microscope. Advantage of thie deposition is that an arbitrary pattem can be deposited by scanning the probe, which can be conveniently used for repairing the photomask of IC.The width of the pattern depend on the probe size, not on the deposition time. The height was proportional to the deposition time. For further development, nano-sizeddots of ZnO was depositedby introducing oxigen gas into the Zn(CH_3)_2 gas. Since ZnO can emit a blue light, kind of deposition of semiconductor dots can open a new field of nanometric photonic integration. Less